A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.

A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.

A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.

A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.

A semiconductor memory device according to the present disclosure includes a memory cell array (110, 210), an input/output circuit (23) that inputs/outputs a signal from/to the memory cell array, and a temperature acquiring circuit (29) that generates temperature information according to the temperature of the memory cell array, and corrects the characteristics of the input/output circuit based on the temperature information.

Example implementations relate to using a spare memory on a memory module. In example implementations, a memory module may have a plurality of memories, including default memories and a spare memory. A plurality of data buffers on the memory module may select data nibbles from the plurality of memories such that when a default memory is identified as defective, a data nibble is selected from the spare memory and not from the defective default memory. A data nibble selected from the default memory may be in a first position in an output of the memory module when the default memory is functional. A data nibble selected from the spare memory may be in a second position in the output of the memory module.

An integrated circuit to drive a plurality of fluid actuation devices includes a status register, a plurality of interfaces, and control logic. The plurality of interfaces include a mode interface, a data interface, and a fire interface. The control logic enables reading of the status register in response to a signal on the mode interface transitioning to logic high with a logic high signal on the data interface, and transitioning a signal on the fire interface to logic high with the signal on the single data interface floating.

A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density.

A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times.

The disclosure includes, in general, among other aspects, an apparatus having multiple programmable units integrated within a processor. The apparatus has circuitry to map addresses in a single address space to resources within the multiple programmable units where the single address space includes addresses for different ones of the resources in different ones of the multiple programmable units and where there is a one-to-one correspondence between respective addresses in the single address space and resources within the multiple programmable units.