A six-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with methods of operation. Methods of increasing the operational speed in reading the contents of a selected memory cell in an array of such memory cells while lowering power consumption, and of avoiding an indeterminate memory cell state when a memory cell is “awakened” from Standby are described.

A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.

A semiconductor structure includes first and second source/drain region disposed in a semiconductor body and spaced from each other by a channel region. A gate electrode overlies the channel region and a capacitor electrode is disposed between the gate electrode and the channel region. A first gate dielectric is disposed between the gate electrode and the capacitor electrode and a second gate dielectric disposed between the capacitor electrode and the channel region. A first electrically conductive contact region is in electrical contact with the gate electrode and a second electrically conductive contact region in electrical contact with the capacitor electrode. The first and second contact regions are electrically isolated from one another.

A semiconductor structure includes first and second source/drain region disposed in a semiconductor body and spaced from each other by a channel region. A gate electrode overlies the channel region and a capacitor electrode is disposed between the gate electrode and the channel region. A first gate dielectric is disposed between the gate electrode and the capacitor electrode and a second gate dielectric disposed between the capacitor electrode and the channel region. A first electrically conductive contact region is in electrical contact with the gate electrode and a second electrically conductive contact region in electrical contact with the capacitor electrode. The first and second contact regions are electrically isolated from one another.

According to one embodiment, a display device includes a pair of substrates including a display area in which pixels are arranged, pixel electrodes and memories provided in the pixels, signal lines supplied with digital signals, switching elements connecting the memories and the signal lines, scanning lines supplied with scanning signals, a first driver unit, and a second driver unit. The first driver unit is provided in a peripheral area around the display area, and supplies the digital signal to the signal line. The second driver unit is provided in the peripheral area, and supplies the scanning signal to the scanning line. In the display device, at least a part of the first driver unit is provided between the display area and the second driver unit.

An authentication circuit coupled to a plurality of memory bits includes a monitoring engine configured to provide a first data pattern to all the bits thereby causing each bit to be in a first data state, detect whether a transition from the first data state to a second data state occurs for each bit in response to a first reducing voltage applied to the plurality of bits, provide a second data pattern to all the bits thereby causing each bit to be in the second data state, and detect whether a transition from the second data state to the first data state occurs for each bit in response to a second reducing voltage applied to the plurality of bits, wherein the first data state is different from the second data state, and a PUF controller configured to generate a PUF signature based on the transitions of each bit.

This invention provides a semiconductor device with high speed operation and reduced size. A circuit includes a circuit including a memory circuit and a circuit including a logic circuit; thus, the circuit functions as a memory device having a function of storing data and a function of performing logic operation. The circuit can output, in addition to data stored in the circuit, data corresponding to a result of logic operation performed using data stored in the circuit as an input signal. The circuit can directly obtain a result of logic operation from the circuit, and thus, the frequency of input/output of a signal performed between the circuit and the circuit can be reduced.

This invention provides a semiconductor device with high speed operation and reduced size. A circuit includes a circuit including a memory circuit and a circuit including a logic circuit; thus, the circuit functions as a memory device having a function of storing data and a function of performing logic operation. The circuit can output, in addition to data stored in the circuit, data corresponding to a result of logic operation performed using data stored in the circuit as an input signal. The circuit can directly obtain a result of logic operation from the circuit, and thus, the frequency of input/output of a signal performed between the circuit and the circuit can be reduced.

A memory includes an array with rows and columns of memory cells. The rows include a first row and a second row, which may be adjacent. The memory also includes a plurality of logic gates in the array. Each logic gate of the plurality of logic gates includes a first input coupled to a respective memory cell in the first row, a second input coupled to a respective memory cell in the second row, and an output. The first and second inputs may be connected to internal nodes within the respective memory cells without intervening transistors. The memory further includes a plurality of sense lines in the array. The output of each logic gate of the plurality of logic gates is coupled to a sense line of the plurality of sense lines.

According to one embodiment, a display device includes a pair of substrates including a display area in which pixels are arranged, pixel electrodes and memories provided in the pixels, signal lines supplied with digital signals, switching elements connecting the memories and the signal lines, scanning lines supplied with scanning signals, a first driver unit, and a second driver unit. The first driver unit is provided in a peripheral area around the display area, and supplies the digital signal to the signal line. The second driver unit is provided in the peripheral area, and supplies the scanning signal to the scanning line. In the display device, at least a part of the first driver unit is provided between the display area and the second driver unit.