Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages having an refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.

The disclosed technology generally relates to storing data, and more particularly relates to a method of storing data in a polymer, where the data comprises a sequence of bits. In one aspect, the method comprises receiving a sequence of bits to be stored and providing a group of different homo-bifunctional monomers. Each homo-bifunctional monomer comprises a core structure having identical functional groups attached at two different positions of the core structure. The group of different homo-bifunctional monomers comprises homo-bifunctional monomers having at least two different core structures. The method further comprises linking the different homo-bifunctional monomers together to form the polymer having a sequence of monomer core structures representing the sequence of bits to be stored. The different homo-bifunctional monomers are linked together using a click chemistry reaction between the functional groups of the different homo-bifunctional monomers. The present disclosure further relates to a synthesis system for performing the method.

Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.

An electronic device includes a substrate, a gate electrode, a dielectric layer, a source electrode, a drain electrode, and a semiconducting layer formed from an organic semiconductor compound and a photo-responsive polymer. The resistance can be switched to a low state by irradiation, and can be switched to a high state by applying a gate bias voltage. This can be useful for a memory device.

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

A method for writing data including a sequence of bits, the data being written in a form of DNA, by in-vitro enzymatically producing memory DNA from a strand of memory writing substrate DNA is disclosed. In one aspect, the method includes repeating of: receiving a sub-sequence of the sequence of bits, the sub-sequence including at least one bit; selecting memory nucleotides based on the sub-sequence; contacting, in liquid medium including the strand of memory writing substrate DNA contacted with an enzyme, the selected memory nucleotides and the enzyme; and synthesizing a portion of the memory DNA from a portion of the strand of memory writing substrate DNA by the enzyme and at least one of the memory nucleotides of the solution, thereby producing memory DNA including memory nucleotides corresponding to bits of the sequence of bits. The disclosed technology further relates to a micro-fluidic system including a microfluidic chip and a controller.

Examples may include techniques to mitigate voltage threshold drift over a period of time that may cause selection failure for selecting memory cells of a memory device. A snap-back event detection is used to determine whether a selected memory cell has been selected for at least a first refresh write operation using one or more selection bias voltages. A subsequent refresh write operation may be implemented based on this determination.

One example method includes encoding data as a polysaccharide structure, synthesizing the polysaccharide structure to create polysaccharide storage media that comprises the data, and storing the polysaccharide storage media. The example method may also include receiving a read request directed to the polysaccharide storage media, mapping the polysaccharide structure to create a map in response to the read request, traversing the map of the polysaccharide structure to determine an X-base number, and obtaining the data by converting the X-base number to a binary form.

Memristive devices based on tunable Schottky barrier are provided. In one aspect, a method of forming a memristive device includes: forming a semiconductor layer on a bottom metal electrode, wherein the semiconductor layer has workfunction-modifying molecules embedded therein; and forming a top metal electrode on the semiconductor layer, wherein the top metal electrode forms a Schottky junction with the semiconductor layer, and wherein the workfunction-modifying molecules are configured to alter a workfunction of the top metal electrode. A memristive device and a method for operating a memristive device are also provided.

A method of storing information using monomers such as nucleotides is provided including converting a format of information into a plurality of bit sequences of a bit stream with each having a corresponding bit barcode, converting the plurality of bit sequences to a plurality of corresponding oligonucleotide sequences using one bit per base encoding, synthesizing the plurality of corresponding oligonucleotide sequences on a substrate having a plurality of reaction locations, and storing the synthesized plurality of corresponding oligonucleotide sequences.