According to one embodiment, a semiconductor memory device includes first and second memory cells, a first word line, first and second sense amplifiers, first and second bit lines, a controller. The first and second sense amplifiers each include first and second transistors. The first bit line is connected between the first memory cell and the first transistor. The second bit line is connected between the second memory cell and the second transistor. In the read operation, the controller is configured to apply a kick voltage to the first word line before applying the read voltage to the first word line, and to apply a first voltage to a gate of the first transistor and a second voltage to a gate of the second transistor while applying the kick voltage to the first word line.

The present invention discloses a method of operating artificial neural network with nonvolatile memory devices having at least one artificial neural nonvolatile memory network. In the present invention, a plurality of nonvolatile memory devices or a nonvolatile memory array comprising the nonvolatile memory devices and necessary circuit units are integrated into an artificial neural network. By such arrangement, it is able to perform feedforward and recurrent operations in the MN number of nonvolatile memory devices in the nonvolatile memory array, so as to adjust or correct the weights stored in the MN number of nonvolatile memory devices through the operating function of the artificial neural network with nonvolatile memory devices.

Memory devices and methods for operating the same are provided. Generally, the device includes an array of multibit-memory-cells, each operable to store multiple bits in separate locations of a charge-trapping layer, and control-circuitry coupled to the array. The control-circuitry is operable read 1st and 2nd bit values of each cell individually based on generated first and second sensed currents, where the first and second sensed currents correspond to charges trapped in first and second bit locations. The control-circuitry executes an algorithm based on the first and second sensed currents and determines a logic state of the cell. In one embodiment, the control-circuitry averages the sensed currents, and compares this to a reference current to determine the logic state. In another, the 2nd bit value is a complement of the 1st, and the control-circuitry compares the currents to determine the logic state without use of a reference current.

According to one embodiment, a semiconductor memory device comprises a first memory cell array including a first block and a second block, the first block including a first memory cell, and the second block including a second memory cell; and a controller that performs, in a first period of time in writing, a first program in the first memory cell and the second memory cell.

A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.

A semiconductor memory cell, semiconductor memory devices comprising a plurality of the semiconductor memory cells, and methods of using the semiconductor memory cell and devices are described. A semiconductor memory cell includes a substrate having a first conductivity type; a first region embedded in the substrate at a first location of the substrate and having a second conductivity type; a second region embedded in the substrate at a second location of the substrate and have the second conductivity type, such that at least a portion of the substrate having the first conductivity type is located between the first and second locations and functions as a floating body to store data in volatile memory; a trapping layer positioned in between the first and second locations and above a surface of the substrate; the trapping layer comprising first and second storage locations being configured to store data as nonvolatile memory independently of one another; and a control gate positioned above the trapping layer.

According to one embodiment, a semiconductor memory device includes first and second memory cells, a first word line, first and second sense amplifiers, first and second bit lines, a controller. The first and second sense amplifiers each include first and second transistors. The first bit line is connected between the first memory cell and the first transistor. The second bit line is connected between the second memory cell and the second transistor. In the read operation, the controller is configured to apply a kick voltage to the first word line before applying the read voltage to the first word line, and to apply a first voltage to a gate of the first transistor and a second voltage to a gate of the second transistor while applying the kick voltage to the first word line.

A memory arrangement having a memory cell array, wherein each column is associated with a bit line and each row is associated with a word line, wherein the columns have first columns of memory cells that store useful data, and columns of memory cells of a second column type that store prescribed verification data, wherein during a read access operation the memory cells of at least the columns of memory cells of the second column type set the associated bit line to a value that corresponds to a logic combination of the values stored by the memory cells of the column of the second column type that belong to rows of memory cells addressed during the read access operation, and a detection circuit that is configured to, during a read access operation, detect whether a bit line associated with a column of memory cells of the second column type is set to a value that corresponds to the logic combination of values stored by memory cells of the column of the second column type of memory cells and whose values belong to different rows of memory cells.

Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck having alternating conductor materials and dielectric materials and a hole containing materials extending through the conductor materials and the dielectric materials. The methods can also include forming a sacrificial material in an enlarged portion of the hole and forming a second deck of memory cells over the first deck. Additional apparatuses and methods are described.

In an example, a memory array may include a memory cell around at least a portion of a semiconductor. The memory cell may include a gate, a first dielectric stack to store a charge between a first portion of the gate and the semiconductor, and a second dielectric stack to store a charge between a second portion of the gate and the semiconductor, the second dielectric stack separate from the first dielectric stack.