A non-volatile memory device includes a meta area having a first region storing first initial data, and second regions storing second initial data, different from each other; a user area configured to store user data; an initialization register configured to store the first initial data or update the second initial data in whole or in part; and control logic configured to perform a read operation, a program operation, or an erase operation using the initial data stored in the initialization register.

Disclosed are devices and methods for improving the initialization of devices housing memories. In one embodiment, a method is disclosed comprising writing a test program to a first region of a memory device during production of the memory device; executing a self-test program in response to detecting a first power up of the memory device, the self-test program stored within the test program; and retrieving and installing an image from a remote data source in response to detecting a subsequent power up of the memory device, the retrieving performed by the test program.

Disclosed are devices and methods for improving the initialization of devices housing memories. In one embodiment, a method is disclosed comprising writing a test program to a first region of a memory device during production of the memory device; executing a self-test program in response to detecting a first power up of the memory device, the self-test program stored within the test program; and retrieving and installing an image from a remote data source in response to detecting a subsequent power up of the memory device, the retrieving performed by the test program.

An apparatus is provided that includes a plurality of word lines that include a plurality of word line zones, a plurality of non-volatile memory cells coupled to the plurality of word lines, and a control circuit coupled to the non-volatile memory cells. The control circuit is configured to determine a corresponding initial program voltage for each of the word line zones. Each corresponding initial program voltage is determined based on a number of program erase cycles.

Memory devices and systems with automatic background precondition upon powerup, and associated methods, are disclosed herein. In one embodiment, a memory device includes a memory array having a plurality of memory cells and a fuse array configured to store precondition data. The precondition data can identify a portion of the memory array, specify a predetermined precondition state, or a combination thereof. When the memory device powers on, the memory device can be configured to automatically retrieve the precondition data from the fuse array and/or to write memory cells in the portion of the memory array to the predetermined precondition state before executing an access command.

A memory device includes a memory cell array with a plurality of memory cells that are connected to a plurality of word lines and a plurality of strings; and a peripheral circuit for performing a program operation on selected memory cells, among the plurality of memory cells, connected to a selected word line. While the peripheral circuit applies a pass voltage to the selected word line during the program operation to turn on the selected memory cells, the peripheral circuit is configured to apply a select voltage to an unselected source line to turn on a source select transistor and configured to apply a ground voltage to an unselected drain select line.

A memory device includes a memory cell array with a plurality of memory cells that are connected to a plurality of word lines and a plurality of strings; and a peripheral circuit for performing a program operation on selected memory cells, among the plurality of memory cells, connected to a selected word line. While the peripheral circuit applies a pass voltage to the selected word line during the program operation to turn on the selected memory cells, the peripheral circuit is configured to apply a select voltage to an unselected source line to turn on a source select transistor and configured to apply a ground voltage to an unselected drain select line.

A semiconductor device includes a clock gating circuit and a control circuit. The clock gating circuit outputs a gated clock signal based on a clock signal. Transitions of the clock signal are output in the gated clock signal in response to a clock enable signal having an enable value and are disabled from being output in the gated clock signal in response to the clock enable signal having a disable value. The control circuit includes a first portion that operates based on the clock signal. The first portion sets the clock enable signal to the disable value in response to a disable control and sets the clock enable signal to the enable value in response to a wakeup control. The control circuit includes a second portion that operates based on the gated clock signal. The second portion provides the disable control to the first portion during an operation.

A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.

A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.