According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.

A storage unit includes a U-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port. The U-shaped magnetic track includes a first port, a second port, a first storage area, and a second storage area. By controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain wall in the first storage area is driven to move. By controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain in the second storage area is driven to move.

According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

A device for data storage and processing includes: at least two input racetrack elements having a plurality of first magnetization regions; at least one output racetrack element having a plurality of second magnetization regions, wherein a magnetization vector is adapted to switch from a first direction to the opposite one, or vice versa, by way of a magnetic field of reduced intensity compared with a magnetic field required to produce a similar switching of a magnetization vector of the first magnetization region, wherein the input racetrack elements and output racetrack element are configured in such a way as to constitute at least one elementary logic gate, wherein at least two of the first magnetization regions are magnetically coupled to at least one of the second magnetization regions.

A magnetic domain wall (MDW) motion device. The MDW motion device may include a ferromagnetic layer with perpendicular magnetic anisotropy and non-magnetic metal layers extending parallel to and in contact with the ferromagnetic layer. The ferromagnetic layer may include first ferromagnetic regions, which are arranged in an extension direction of the ferromagnetic layer, and second ferromagnetic regions, which are provided between an adjacent pair of the first ferromagnetic regions. The first and second ferromagnetic regions may have spin torque coefficients of opposite signs, and an MDW positioned near an interface between the first and second ferromagnetic regions may be moved by an in-plane current flowing through the non-magnetic metal layer.

The present invention relates to a data storage system and a method which has high storing capacity and high data access rate and low power consumption. The said data storage system essentially includes at least two optical layers, and which have at least one active layer in which the light is generated, at least one lower electric contact enabling the electric energy to be transferred to the active layer and at least one upper electric contact, at least two reflecting layers reflecting the light generated in the active layer; at least one thermal insulator; at least one magnetic layer, which has at least one storage bit, at least one lower buffer bit, at least one upper buffer bit enabling the data to be transferred up; at least one transparent layer and transfers the light generated by the optical unit to the magnetic layer.

According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D.sub.1-xE.sub.x, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L1.sub.0 compound.

A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.