An Integrated Circuit (IC) includes a non-volatile memory (NVM) and secure power-up circuitry. The NVM is configured to store an operational state of the IC. The secure power-up circuitry is configured to (i) during a power-up sequence of the IC, perform a first readout of the operational state from the NVM while a supply voltage of the IC is within a first voltage range, (ii) if the operational state read from the NVM in the first readout is a state that permits access to a sensitive resource of the IC, verify that the supply voltage is within a second voltage range, more stringent than the first voltage range, and then perform a second readout of the operational state from the NVM, and (iii) initiate a responsive action in response to a discrepancy between the operational states read from the NVM in the first readout and in the second readout.

Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, responsive to detecting a triggering event, selecting a family of memory blocks of the memory device, the selected family being associated with a set of bins, each bin associated with a plurality of read voltage offsets to be applied to base read voltages during read operations. The operations performed by the processing device further include calibration operations to determine data state metric values characterizing application of read voltage offsets of various bins. The operations performed by the processing device further include identifying, based on the determined data state metrics, a target bin and associating the selected family with the target bin.

A signal modulation apparatus, a memory storage apparatus, and a signal modulation method are disclosed. The signal modulation apparatus includes an observation circuit, a signal modulation circuit, and a phase control circuit. The signal modulation circuit is configured to generate a second signal according to a first signal and a reference clock signal. A frequency of the first signal is different from a frequency of the second signal. The phase control circuit is configured to obtain an observation information via the observation circuit. The observation information reflects a process variation of at least one electronic component in the signal modulation apparatus. The phase control circuit is further configured to control an offset between the first signal and the reference clock signal according to the observation information.

Methods, systems, and devices for monitoring and adjusting access operations at a memory device are described to support integrating monitors or sensors for detecting memory device health issues, such as those resulting from device access or wear. The monitoring may include traffic monitoring of access operations performed at various components of the memory device, or may include sensors that may measure parameters of components of the memory device to detect wear. The traffic monitoring or the parameters measured by the sensors may be represented by a metric related to access operations for the memory device. The memory device may use the metric (e.g., along with a threshold) to determine whether to adjust a parameter associated with performing access operations received by the memory device, in order to implement a corrective action.

Disclosed is a system including a memory device having a plurality of physical cells and a processing device, operatively coupled with the memory device, to perform operations that include selecting, responsive to detecting a power event, a subset of a plurality of memory cells of the memory device, the memory device being characterized by auxiliary read metadata identifying one or more read offsets for each of the plurality of memory cells, the one or more read offsets representing corrections to read signals applied to the respective memory cell during a read operation. The operations further include performing one or more diagnostic read operations for each of the subset of the plurality of memory cells of the memory device and modifying the auxiliary read metadata by updating the one or more read offsets for at least some of the plurality of memory cells of the memory device.

A storage device includes a nonvolatile memory device and a memory controller to control the nonvolatile memory device. The nonvolatile memory device includes a memory cell array. The memory cell array includes a normal cell region, a parity cell region and a redundancy cell region. First bit-lines are connected to the normal cell region and the parity cell region and second bit-lines are connected to the redundancy cell region. The memory controller includes an error correction code (ECC) engine to generate parity data. The memory controller stores user data in the normal cell region, controls the nonvolatile memory device to perform a column repair on first defective bit-lines among the first bit-lines, assigns additional column addresses to the first defective bit-lines and the second bit-lines and stores at least a portion of the parity data in a region corresponding to the additionally assigned column addresses.

Provided are a memory device detecting a defect and an operating method thereof. The memory device includes a memory cell area including a memory cell array that stores data, and a peripheral circuit area including a control logic configured to control operations of the memory cell array, wherein the peripheral circuit area further includes a defect detection circuit, the defect detection circuit being configured to generate a count result value by selecting a first input signal from a plurality of input signals and counting at least one time interval of the first input signal based on a clock signal, and to detect a defect of the first input signal by comparing an expected value with the count result value, and the at least one time interval is a length of time in which logic low or logic high is maintained.

Memory devices may perform read operations and write operations with different bit error correction rates to satisfy a bit error correction rate. However, improving the bit error correction rate of the memory device using a single type of read command and/or write commands may result in longer read and write commands. Moreover, using longer read and write commands may result in undesirable higher memory power consumption and may reduce memory throughput. Accordingly, memory operations are described that may use combination of commands with increased bit error correction capability and reduced bit error correction capability. For example, the read operations may use multiple (e.g., at least two) sets or groupings of read commands and the write operations may use multiple (e.g., at least two) sets or groupings of write commands.

An apparatus with a memory array having a plurality of memory cells. The apparatus also including a memory built-in self-test circuit to test the memory array. The memory built-in self-test circuit includes one or more processing devices to write a data pattern to one or more memory cells to be tested in the memory array, pause for a time period corresponding to a predetermined pause time setting, and read the written data pattern from the one or more memory cells after the time period has elapsed. The predetermined pause time setting is automatically adjusted based on memory device conditions, which can include the temperature of the apparatus.

A device includes a first memory die and a second memory die directly coupled to the first memory die via a first bus. The device also includes a second bus directly coupled to the first memory die. The first memory die includes a first trim circuit that when in operation adjusts a delay of signal transmission by the first memory die to a first value, while the second memory die comprises a second trim circuit that when in operation adjusts a delay of signal transmission by the second memory die by a second value.