A semiconductor device includes a first semiconductor portion and a second semiconductor portion. The first semiconductor portion provides a plurality of memory components, including a first substrate layer, a plurality of first interconnect conductive layers, a plurality of first conductive vias, and a plurality of first conductive contacts. The first conductive contacts electrically connect to the first conductive vias, and the first conductive contacts in combination with the first conductive vias are formed on a top first interconnect conductive layer of the first interconnect conductive layers. The second semiconductor portion provides a control circuit, including a second substrate layer and a plurality of second interconnect conductive layers. The first and second semiconductor portions are stacked vertically with one another, so that the first conductive contacts are electrically connected to the control circuit, and the first conductive contacts in combinations with the first conductive vias form a plurality of transmission channels.

A memory test method and apparatus, an electronic device, and a computer-readable storage medium are provided. The method includes: obtaining a test instruction; generating, in response to the test instruction, a test clock signal, a to-be-tested address and to-be-tested data; determining a to-be-tested memory from memories of a storage device, the storage device including a self-test circuit; writing the to-be-tested data into a storage unit corresponding to the to-be-tested address of the to-be-tested memory; reading output data from the storage unit corresponding to the to-be-tested address of the to-be-tested memory; and comparing the to-be-tested data and the output data to obtain a test result of the to-be-tested memory. The self-test circuit disposed in the storage device is used to implement a memory test process. Thus, the dependency on automatic test equipment is reduced, thereby improving test speed and reducing test cost.

A test circuit testing a storage circuit and including a controller, a pattern-generator circuit, a comparing circuit, and a first register is provided. The controller is configured to generate a plurality of internal test signals. The pattern-generator circuit writes test data into the storage block of the storage circuit according to the internal test signal and reads the storage block to generate read data. The comparing circuit compares the test data and the read data to generate a test result. The first register stores the test result. The controller determines whether the storage circuit is working normally according to the test result stored in the first register.

Memory devices and methods are described that include a stack of memory dies and a logic die. Method and devices described include those that provide for repartitioning the stack of memory dies and storing the new partitions in a memory map. Repartitioning in selected configurations allows portions of memory to be removed from use without affecting the rest of the memory device. Additional devices, systems, and methods are disclosed.

A method for testing a circuit includes performing, by a test engine, a test of a memory element of the circuit, the test accesses a memory location in the memory element, the memory location is identified by an address, and the memory location is accessed via a first port associated with a first port select bit. The method further includes, in response to detecting a failure associated with the memory location, determining an existing entry for the address in a failed address register, and determining that the existing entry in the failed address register is associated with a second port select bit, distinct from the first port select bit. The method further includes, in response to the second port select bit being distinct from the first port select bit, setting a multi-port failure flag for the memory element that is being tested.

A multi-chip package may include a controller, a storage memory and a buffer memory. The controller may be configured to output a control signal. The storage memory may be tested in response to the control signal. The buffer memory may be sequentially tested while or after testing the storage memory in response to the control signal.

A semiconductor memory device includes a memory and a memory controller configured to control the memory. The memory controller includes a normal operation control part and a repair part. The normal operation control part is configured to control a normal operation of the memory and includes a plurality of storage spaces used while the normal operation is controlled. The repair part is configured to control a repair operation of the memory and stores faulty addresses detected while the repair operation is controlled into the plurality of storage spaces included in the normal operation control part.

A memory device includes a first comparison circuit suitable for comparing read data read from a plurality of memory cells with write data written in the memory cells and outputting a comparison result, a path selection circuit suitable for transferring selected data selected among the read data and test data as read path data based on the comparison result of the first comparison circuit, and an output data alignment circuit suitable for converting the read path data into serial data to output the serial data as output data.

For a non-volatile memory die formed of multiple blocks of memory cells, the memory die has a multi-bit bad block flag for each block stored on the memory die, such as in a fuse ROM. For each block, the multi-bit flag indicates if the block has few defects and is of the highest reliability category, is too defective to be used, or is in of one of multiple recoverability categories. The multi-bit bad blocks values can be determined as part a test process on fresh devices, where the test of a block can be fail stop for critical category errors, but, for recoverable categories, the test continues and tracks the test results to determine a recoverability category for the block and write this onto the die as a bad block flag for each block. These recoverability categories can be incorporated into wear leveling operations.

A data processing apparatus is provided, comprising a processor configured to execute a process, in particular with at least one thread, a memory management unit component configured to access a page table, and a page fault handler configured to handle page faults by triggering a page fault in response to detecting one of a plurality of predefined bit patterns in the page table, and by assigning a different page fault operation for the process, in particular with the at least one thread, to each of the plurality of predefined bit patterns.