Embodiments relate to a system, program product, and method for integrating compiler-based testing in post-silicon validation. The method includes generating a test program through a device-under-test (DUT). The method also includes generating a plurality of memory intervals and injecting the plurality of memory intervals into the test program. The method further includes injecting a plurality of compiled test snippets into the test program and executing one or more post-silicon validation tests for the DUT with the test program.

A memory chip may include: a plurality of memory banks; a data storage configured to store access information indicative of access operations for one or more segments of the plurality of memory banks; and a refresh controller configured to perform a refresh operation of the one or more segments based, at least in part, on the stored access information.

A memory chip may include: a plurality of memory banks; a data storage configured to store access information indicative of access operations for one or more segments of the plurality of memory banks; and a refresh controller configured to perform a refresh operation of the one or more segments based, at least in part, on the stored access information.

An electronic device includes a masking signal generation circuit configured to generate a test masking signal by receiving a fuse data during a period in which a test masking mode is executed; and a test mode signal generation circuit configured to, when a test command for executing a test in an internal circuit is input, execute the test based on the test masking signal.

An electronic device includes a masking signal generation circuit configured to generate a test masking signal by receiving a fuse data during a period in which a test masking mode is executed; and a test mode signal generation circuit configured to, when a test command for executing a test in an internal circuit is input, execute the test based on the test masking signal.

An apparatus of a multi-chip package (MCP) of a functional safety system, comprises a processor to be configured as a master chip in a master-slave arrangement with a slave chip in the MCP, and a memory coupled to the processor to store one or more infield test scan patterns. The processor includes a bock to couple the master chip to the slave chip via a high-speed input/output (IO) interface to retrieve the one or more infield test scan patterns from the memory via the master chip, and to provide the one or more infield test scan patterns to the slave chip via the high-speed IO interface in response to the functional safety system entering an infield test mode.

An apparatus of a multi-chip package (MCP) of a functional safety system, comprises a processor to be configured as a master chip in a master-slave arrangement with a slave chip in the MCP, and a memory coupled to the processor to store one or more infield test scan patterns. The processor includes a bock to couple the master chip to the slave chip via a high-speed input/output (IO) interface to retrieve the one or more infield test scan patterns from the memory via the master chip, and to provide the one or more infield test scan patterns to the slave chip via the high-speed IO interface in response to the functional safety system entering an infield test mode.

The invention introduces a method for verifying memory interface, performed by a processing unit, to include: driving a physical layer of a memory interface to pull-high or pull-low a signal voltage on each Input-Output (IO) pin thereof to a preset level according to a setting; obtaining a verification result corresponding to each IO pin from the memory interface; and storing each verification result in a static random access memory (SRAM), thereby enabling a testing host to obtain each verification result of the SRAM through a test interface. The testing host may examine each verification result to know whether any unexpected error has occurred in signals on the IO pins of the memory interface.

A storage device includes 3D NAND including layers of multi-level cells. Test reads are performed by reading only LSB pages and reading layers in a repeating pattern of reading two and skipping two. A test read of a block is performed when its read count reaches a threshold. The counter threshold is updated according to errors detected during the test read such that the frequency of test reads increases with increase in errors detected. Counter thresholds according to errors may be specified in a table. The table may be selected as corresponding to a range of PEC values including the current PEC count of the 3D NAND. Each table further specifies a number of errors that will result in garbage collection being performed.

A storage device includes 3D NAND including layers of multi-level cells. Test reads are performed by reading only LSB pages and reading layers in a repeating pattern of reading two and skipping two. A test read of a block is performed when its read count reaches a threshold. The counter threshold is updated according to errors detected during the test read such that the frequency of test reads increases with increase in errors detected. Counter thresholds according to errors may be specified in a table. The table may be selected as corresponding to a range of PEC values including the current PEC count of the 3D NAND. Each table further specifies a number of errors that will result in garbage collection being performed.