The present invention has been made to improve measurement accuracy of a thermal flow meter. In the thermal flow meter according to the invention, a circuit package (400) that measures a flow rate is molded in a first resin molding process. In a second resin molding process, a housing (302) having an inlet trench (351), a bypass passage trench on frontside (332), an outlet trench (353), and the like are formed through resin molding, and an outer circumferential surface of the circuit package (400) produced in the first resin molding process is enveloped by a resin in the second resin molding process to fix the circuit package (400) to the housing (302).

A flow sensor structure seals the surface of an electric control circuit and part of a semiconductor device via a manufacturing method that prevents occurrence of flash or chip crack when clamping the semiconductor device via a mold. The flow sensor structure includes a semiconductor device having an air flow sensing unit and a diaphragm, and a board or lead frame having an electric control circuit for controlling the semiconductor device, wherein a surface of the electric control circuit and part of a surface of the semiconductor device is covered with resin while having the air flow sensing unit portion exposed. The flow sensor structure may include surfaces of a resin mold, a board or a pre-mold component surrounding the semiconductor device that are continuously not in contact with three walls of the semiconductor device orthogonal to a side on which the air flow sensing unit portion is disposed.

A flow sensor structure seals the surface of an electric control circuit and part of a semiconductor device via a manufacturing method that prevents occurrence of flash or chip crack when clamping the semiconductor device via a mold. The flow sensor structure includes a semiconductor device having an air flow sensing unit and a diaphragm, and a board or lead frame having an electric control circuit for controlling the semiconductor device, wherein a surface of the electric control circuit and part of a surface of the semiconductor device is covered with resin while having the air flow sensing unit portion exposed. The flow sensor structure may include surfaces of a resin mold, a board or a pre-mold component surrounding the semiconductor device that are continuously not in contact with three walls of the semiconductor device orthogonal to a side on which the air flow sensing unit portion is disposed.

A gas flow rate measurement device includes a flow rate sensor that outputs a voltage that includes variations due to differences in an external environment and variations due to individual differences, a correction coefficient storage unit that stores a correction coefficient for correcting the output voltage of the flow rate sensor based on a corresponding relationship between the output voltage of the flow rate sensor and the flow rate of the gas, and a correction calculation unit that corrects the output voltage of the flow rate sensor by using the correction coefficient. The correction coefficient is a coefficient for directly converting the output voltage of the flow rate sensor into an ideal voltage value that does not include the variations due to the differences in the external environment and does not include the variations due to the individual differences in the flow rate sensor.

Provided are a semiconductor device and a thermal type fluid flow rate sensor which suppress strain occurring in an aluminum film and suppresses disconnection due to repeated metal fatigue of the aluminum film. The semiconductor device and the thermal type fluid flow rate sensor of the present invention are configured so that the heights of a silicon film and an aluminum film satisfy D>D1 between a flow rate sensor part (immediately above a diaphragm end part) D and a circuit part (LSI part) D1.

Provided are a semiconductor device and a thermal type fluid flow rate sensor which suppress strain occurring in an aluminum film and suppresses disconnection due to repeated metal fatigue of the aluminum film. The semiconductor device and the thermal type fluid flow rate sensor of the present invention are configured so that the heights of a silicon film and an aluminum film satisfy D>D1 between a flow rate sensor part (immediately above a diaphragm end part) D and a circuit part (LSI part) D1.

A cargo body includes a floor, a roof, a first sidewall extending between the floor and the roof, and a second sidewall extending between the floor and the roof, the second sidewall cooperating with the first sidewall, the floor, and the roof to define a cargo receiving volume. The floor is defined by at least one composite panel including a core and a pair of skins sandwiching the core.

A cargo body includes a floor, a roof, a first sidewall extending between the floor and the roof, and a second sidewall extending between the floor and the roof, the second sidewall cooperating with the first sidewall, the floor, and the roof to define a cargo receiving volume. The floor is defined by at least one composite panel including a core and a pair of skins sandwiching the core.

A sensor system for determining the intake air mass of an internal combustion engine. The sensor system includes a grating situated upstream from a plug-in sensor in a main flow direction. The grating is formed annular-shaped around a center axis of a flow tube extending in the direction of the main flow direction. The grating includes grating rings and grating struts extending radially with respect to the center axis and the grating rings. The grating rings and grating struts form passages between them for the intake air flowing in the main flow direction. The grating rings are situated around the center axis and coaxially to one another and are separated from one another by the grating struts.

In an embodiment, a method of sensing a flow comprises performing a measurement cycle for a first period of time, powering off the at least one upstream resistive element and the at least one downstream resistive element for a second period of time, and performing another measurement cycle for a third period of time. Performing the measurement cycle comprises supplying a current to the upstream resistive element and the downstream resistive element arranged in a bridge, resistively heating the upstream resistive element and the downstream resistive element to a temperature above an ambient temperature, and detecting an imbalance in the bridge resulting from a temperature difference between the at least one upstream resistive element and the at least one downstream resistive element in response to the flow of a fluid past the flow sensor.