The device comprises an array (8) of cells (10), with each cell having a single-photon avalanche diode (12) and a quenching circuit (14). Each cell (10) further comprises a first analog output (A) as well as a digital output (D). A latch (20) is provided for buffering a pulse generated by the diode (12) and selectively feeding it to the digital output (D). The cells (10) are arranged in rows and columns, and the outputs (A, D) are fed to analog and digital bus lines (40, 42) for off-array analog and digital signal processing. A data switch (54) and a shift register (58) are provided for serializing various measurement results detected by the device.

The present invention is directed to electrical circuits and methods. According to a specific embodiment, the present invention provides a voltage compensation mechanism for one or more single-phone avalanche diodes (SPADs). A reference voltage is generated based at least on an operating voltage of the SPADs. The reference voltage is coupled to a charge pump that generates a compensation voltage for the diodes. There are other embodiments as well.

A photoelectric conversion device according to an embodiment of the present disclosure includes an avalanche photodiode, a pulse generation unit that converts an output from the avalanche photodiode into a pulse signal, a pulse count unit that counts the pulse signal and outputs a pulse count value, a time count unit that outputs a time count value indicating a time from the start of operation of the pulse generation unit, an output unit that, when the pulse count value does not exceed a threshold value, outputs the pulse count value, and when the pulse count value exceeds the threshold value, ends counting in the pulse count unit and outputs the time count value at the time of the pulse count value exceeding the threshold value, and a threshold calculation unit that calculates the threshold value using the time count value.

A system for dark current compensation in SPAD imagery is configurable to capture an image frame with the SPAD array and generate a temporally filtered image by performing a temporal filtering operation using the image frame and at least one preceding image frame. The at least one preceding image frame is captured by the SPAD array at a timepoint that temporally precedes a timepoint associated with the image frame. The system is also configurable to obtain a dark current image frame. The dark current image frame includes data indicating one or more SPAD pixels of the plurality of SPAD pixels that detect an avalanche event without detecting a corresponding photon. The system is also configurable to generate a dark current compensated image by performing a subtraction operation on the temporally filtered image or the image frame based on the dark current image frame.

The present disclosure relates to limitation of noise on light detectors using an aperture. One example embodiment includes a system. The system includes a lens disposed relative to a scene and configured to focus light from the scene onto a focal plane. The system also includes an aperture defined within an opaque material disposed at the focal plane of the lens. The aperture has a cross-sectional area. In addition, the system includes an array of light detectors disposed on a side of the focal plane opposite the lens and configured to intercept and detect diverging light focused by the lens and transmitted through the aperture. A cross-sectional area of the array of light detectors that intercepts the diverging light is greater than the cross-sectional area of the aperture.

An exemplary wearable brain interface system includes a head-mountable component and a control system. The head-mountable component includes an array of photodetectors that includes a photodetector comprising a single-photon avalanche diode (SPAD) and a fast-gating circuit configured to arm and disarm the SPAD. The control system is for controlling a current drawn by the array of photodetectors.

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Described herein is an electronic device, including a pixel and a turn-off circuit. The pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage node and an anode selectively coupled to ground through an enable circuit, and a clamp diode having an anode coupled to the anode of the SPAD and a cathode coupled to a turn-off voltage node. The turn-off circuit includes a sense circuit coupled between the turn-off voltage node and ground and configured to generate a feedback voltage, and a regulation circuit configured to sink current from the turn-off voltage node to ground based upon the feedback voltage such that a voltage at the turn-off voltage node maintains generally constant.

A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.

An optical receiver including an ASIC, a light detector element, and a protective mask is disclosed. The light detector element is disposed on the ASIC and has a top surface oriented toward incident light, the top surface including a portion configured to receive the incident light and via which the incident light reaches an active area of the light detector element. The protective mask is placed over the ASIC so as to (i) cover, from the incident light, a portion of the ASIC, and (ii) provide an aperture that defines an optical path for the incident light through the protective mask to the portion of the top surface of the light detector element.