An embodiment contact combustion type hydrogen sensor includes a substrate including silicon, lamination layers disposed over a top surface of the substrate and including a first thin oxide layer and a first thin nitride layer, a heater over the lamination layers, the heater including a connecting part electrically connected to a predetermined part and a heating part configured to be heated in response to power being applied, insulating layers covering a top surface of the heater and configured to perform an insulating operation, the insulating layers including a second thin oxide layer and a second thin nitride layer, a platinum catalyst over the insulating layers and configured to be heated by the heater to perform a hydrogen reaction, and a slit outside the heating part and passing through the substrate and the lamination layers.

A gas sensing device is provided. The gas sensing device includes a substrate, a sensing film deposited on the substrate, and a plurality of electrodes deposited on the sensing film. The sensing film comprising ReNiO3, wherein Re is a rare-earth cation wherein. At least one of the electrodes including platinum, palladium, or a combination thereof. The electrodes are spaced apart from each other for measurement of electrical resistance.

A hydrogen gas sensor utilizing electrically isolated tunneling magnetoresistive sensing elements is provided. The hydrogen gas sensor comprises: a substrate in an X-Y plane, tunneling magnetoresistive sensors located on the substrate, and a hydrogen sensing layer located on the tunnel magnetoresistive sensors. The hydrogen sensing layer and the tunneling magnetoresistive sensor are electrically isolated from each other. The hydrogen sensing layer includes a multi-layer thin film structure formed from palladium layers and ferromagnetic layers, wherein the palladium layers are used for absorbing hydrogen in the air that causes a change in the orientation angle of a magnetic anisotropy field in each of the ferromagnetic layers in the X-Z plane into an X-axis direction. The tunnel magnetoresistive sensors are used for detecting a magnetic field signal of the hydrogen sensing layer, wherein the magnetic signal determines the hydrogen gas concentration. This hydrogen gas sensor ensures measurement safety.

The gas measurement device includes a catalyst member connected to a power source applying voltage or current, performing a reaction of a first gas and a second gas contained in a mixed gas contacted with the catalyst member to generate a third gas, and exhibiting a catalytic action in which the reaction changes in response to temperature, and a gas sensor configured to detect gas molecules contacted with the catalyst member.

A hydrogen sensitive film, a hydrogen sensor and a preparation thereof. The hydrogen sensitive film has a composite structure of an aerogel and a catalyst. The aerogel can adsorb hydrogen and undergo hydrogenation reaction with hydrogen. The catalyst is a nano-noble metal catalyst for catalyzing the hydrogenation reaction, and is distributed in pores of the aerogel. The hydrogen sensitive film is prepared by mixing a catalyst into an aerogel through physical compounding. The hydrogen sensor includes an insulating substrate layer, the hydrogen sensitive film and an electrode layer.

A thermochemical sensor is provided. The thermochemical sensor comprises: a substrate structure comprising a thermoelectric surface having concave portions and convex portions; a base fiber disposed on the thermoelectric surface of the substrate structure; and a catalyst layer that conformally covers the thermoelectric surface of the substrate structure and the base fiber.

Disclosed herein is a method for manufacturing a hydrogen sensor, the method comprising the steps of: disposing a thin film made of a transition metal or an alloy thereof on a surface of elastic substrate; applying a tensile force in a repetitive manner to the elastic substrate to form a nanocrack on the thin film disposed on the surface of the elastic substrate; and injecting hydrogen gas into the formed nanocrack and then removing the hydrogen gas to form a nanogap, wherein the tensile force in the step of forming a nanocrack is applied to an extent that the elastic substrate has a tensile strain of 25% to 100%.

A gas sensing element reflects light incoming along an optical path on a sensing face. The light reflected by the gas sensing element changes in a characteristic depending on quantity of a specific gas that is in contact with the gas sensing element. Each of a first optical element and a second optical element bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on the same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical element and a point on the optical path where light enters the second optical element.

According to one embodiment, a sensor includes a sensor part and a first circuit. The sensor part includes a base body, a fixed electrode fixed to the base body, a supporter fixed to the base body, and a movable part supported by the supporter. The movable part includes a movable region including a movable electrode facing the fixed electrode, and a first support region provided between the movable region and the supporter. The first support region includes a first electrode, and a second electrode insulated from the first electrode. The first circuit is configured to perform a first operation of applying a voltage between the first electrode and the second electrode.

A hydrogen sensor element comprising a pair of electrodes and a hydrogen detection film disposed in contact with the pair of electrodes, wherein the hydrogen detection film contains a conjugated polymer and a dopant, and wherein the absolute value |ΔG| of energy difference between the lowest unoccupied orbital of the dopant and the highest occupied orbital of the conjugated polymer in the ground state is 4.5 eV or more, is provided.