A pogo pin-free testing device for IC chip test includes a load board, a ceramic interposer disposed on the load board, and copper core balls. The ceramic interposer has first and second surfaces and connecting points, and the second surface of the ceramic interposer faces the load board. Each connecting point has through holes penetrating the first and second surfaces, and an inner sidewall surface thereof has a metallization layer. The metallization layer is extended to a portion of the first surface and a portion of the second surface. In each of the connecting points, an area of an extending portion of the metallization layer extended to the second surface is less than an area of an extending portion of the metallization layer extended to the first surface. The copper core balls are disposed between the load board and the through holes of each connecting point of the ceramic interposer.

When a load necessary for inspection is applied to a cylindrical body in the axial direction thereof, an end of the first bar-like main body is located closer to the other end side of the cylindrical body than one end of a support portion in a support member that supports the body portion, an end of the second bar-like main body is located closer to one end side of the cylindrical body than the other end of the support portion, the body portion is located in the entire portion where the support portion is located, and a radial distance between the outer peripheral surface of the axial central portion of at least one of the first spring portion and the second spring portion and the support member is larger than the distance between the body portion and the support portion.

Proposed are a probe head and a probe card having the same. The probe head according to the present disclosure includes a plurality of guide plates each having a guide hole, wherein each of the guide plates has a shape in which a plurality of layers are stacked, and each of the guide plates includes: a first guide layer provided at a lowermost side thereof, and having a first guide hole; and a second guide layer provided at an uppermost side thereof, and having a second guide hole, wherein a side wall of the first guide hole and a side wall of the second guide hole are not provided on the same vertical line.

Methods of fabricating a plurality of carbon nanotube-bundle probes on a substrate are disclosed. In some embodiments, the method includes the following: providing a substrate having a top surface and a bottom surface; forming an array of electrically conductive pads on the top surface, the array of electrically conductive pads being formed to mirror an array of pads on an integrated circuit that is to be tested; applying a catalyst for promoting growth of carbon nanotubes on each of the array of electrically conductive pads; heating the substrate in a carbon-rich environment thereby growing nanotubes extending upwardly from each of the array of electrically conductive pads and above the top surface of the substrate thereby forming a plurality of carbon nanotube-bundle probes extending upwardly above the top surface of the substrate; and capping each of the plurality of carbon nanotube-bundle probes with an electrically conductive material.

One aspect of the present disclosure discloses a probe, including a probe body having a center axis defining a proximal end and a distal end and including an aperture in the distal end; a window affixed in the aperture, wherein the window is substantially optically transparent; and a flange adjoining the proximal end of the probe body, the flange including a sealing surface and a sealing edge, wherein the flange separates an in-process portion of the probe from an ex-process portion of the probe, the in-process portion including at least the probe body, the sealing surface and the sealing edge, where at least the in-process portion of the probe consists essentially of an austenitic stainless steel material. Further aspects include a computer product configured to execute a method employing the probe.

A probing system includes a chuck configured to support a device under test (DUT); a probe card disposed above the chuck and including a plurality of probes protruding from the probe card toward the chuck; and a platen disposed between the chuck and the probe card and configured to support the probe card, wherein the chuck includes a shielding member disposed between the platen and the chuck.

A system may include first and second qubits that cross one another and a first coupler having a perimeter that encompasses at least a part of the portions of the first and second qubits, the first coupler being operable to ferromagnetically or anti-ferromagnetically couple the first and the second qubits together. A multi-layered computer chip may include a first plurality N of qubits laid out in a first metal layer, a second plurality M of qubits laid out at least partially in a second metal layer that cross each of the qubits of the first plurality of qubits, and a first plurality N times M of coupling devices that at least partially encompasses an area where a respective pair of the qubits from the first and the second plurality of qubits cross each other.

Palladium-based ternary or higher alloys include palladium at about 45-55 wt %, copper about 32-42 wt %, silver at about 8-15 wt %, rhenium at about 0-5 wt %, and optionally one or more modifying elements at up to 1.0 wt %. The alloys are age-hardenable, provide hardness in excess of 350 HK (Knoop, 100 g load), have electrical conductivities above 19.5% IACS (International Annealed Copper Standard), have an elevated temperature strength above 100 ksi at temperatures up to 480° F. (250° C.), and remain ductile (tensile elongation >2%) in their fully age-hardened condition. The alloys may be used in static and moveable electrical contact and probe applications.

A probe pin (100, 100′) for electronic testing of semi-conductor elements is provided. The pin contains an electrically conductive core element (200) made up of a metallic alloy, and an electrically insulating jacket element (300) which surrounds the core element (200) over regions thereof. The core element (200) contains a distal contact section (210) for electrical contacting to a semi-conductor element. The metallic alloy of the core element contains at least 67% by weight rhodium, 0.1% by weight to 1% by weight zirconium, up to 1% by weight yttrium, and up to 1% by weight cerium. A method for producing a probe pin is also described.

A conductive probe may include a probe body for communicating with a circuit tester or a jumper. The probe body may be formed of metal and may have a free end. A probe tip may be mounted to the end of the probe body. The probe tip may be formed of thorium-tungsten. The probe tip may be configured for contacting a circuit node.