A SEB resistance evaluation method includes: disposing an excitation source within a model of a semiconductor device; and determining an energy of the excitation source at which the semiconductor device exhibits thermal runaway, while varying a voltage applied to the model of the semiconductor device and the energy of the excitation source.

A system including a modulator, a laser source, a mirror, a laser sensor, and a processor. The modulator is movable in a first direction. The laser source is configured to emit laser light in a direction parallel to the surface of the modulator. The mirror is configured to redirect the laser light. The laser sensor is configured to detect a first change in intensity when a particle on the surface of the modulator passes through the laser light emitted by the laser source. The laser sensor is further configured to detect a second change in intensity when the particle on the surface of the modulator passes through the laser light redirected by the at least one mirror. The processor is configured to determine an X-Y location of the particle based on the first change in intensity and the second change in intensity.

A coil arrangement for generating a configurable 3D magnetic field vector inside a cavity, comprises a solenoid forming the cavity and having a first axis, a first pair of coils having a second common axis, and a second pair of coils having a third common axis, the three axes intersecting in a point where a chip to be tested is to be located. A test arrangement further comprises a container for holding a liquid and having at least one opening for providing access to the at least one cavity. A test system further comprises an electrical unit with a plurality of current sources, and a mechanical positioning mechanism for placing and holding the chip to be tested.

Systems and methods are provided for testing a threshold energy required to cause a latchup on an electronic component. An exemplary method includes applying a series of laser pulses to a testing object with a pulsed laser unit. The testing object is connected to a testing circuit which can measure the energy of each of the series of laser pulses, and detect whether a pulse of the series of laser pulses resulted in a latchup on the testing object. Upon detecting the pulse, the method provides for logging the energy of the pulse using a recording unit and logging the latchup status of the test device. If a latchup is detected, the testing circuit automatically mitigates the latchup event.

A method of testing a semiconductor device includes forming conductive bumps respectively on a plurality of bonding pads of the semiconductor device. The semiconductor device having the conductive bumps is supported on a substrate stage. A gripper having first and second holders spaced apart from each other is positioned over the conductive bump. The conductive bump is clamped between the first and second holders. The gripper clamping the conductive bump is reciprocated at a constant speed with a predetermined stroke in a horizontal direction parallel with an upper surface of the substrate stage. A reliability of the semiconductor device is determined by measuring a time point at which a crack occurs in an upper wiring connected to the bonding pad.

Systems and methods are provided for testing a threshold energy required to cause a latchup on an electronic component. An exemplary method includes applying a series of laser pulses to a testing object with a pulsed laser unit. The testing object is connected to a testing circuit which can measure the energy of each of the series of laser pulses, and detect whether a pulse of the series of laser pulses resulted in a latchup on the testing object. Upon detecting the pulse, the method provides for logging the energy of the pulse using a recording unit and logging the latchup status of the test device. If a latchup is detected, the testing circuit automatically mitigates the latchup event.

A method for characterizing a fluctuation induced by single particle irradiation in a device. A plurality of devices varying in size are tested respectively before and after irradiation to obtain threshold voltage distribution, such that a threshold voltage fluctuation induced by irradiation is obtained and used to correct a process fluctuation model, so as to correct a design margin of the devices working under the irradiation.

Disclosed is a device for testing components under elevated pressure in which a pressure chamber is provided. The lateral boundary of the pressure chamber included a ring and an annular part, which may move perpendicularly to the plane of the component to be tested. A velvet-like lining is provided on the end face of the annular part or of the ring that faces the component to be tested. The fibers of the lining protrude from the annular part or from the ring toward the component to be tested and bridge the gap between the device and the component.

Systems and methods are provided for testing a threshold energy required to cause a latchup on an electronic component. An exemplary method includes applying a series of laser pulses to a testing object with a pulsed laser unit. The testing object is connected to a testing circuit which can measure the energy of each of the series of laser pulses, and detect whether a pulse of the series of laser pulses resulted in a latchup on the testing object. Upon detecting the pulse, the method provides for logging the energy of the pulse using a recording unit and logging the latchup status of the test device. If a latchup is detected, the testing circuit automatically mitigates the latchup event.

A method for characterizing a fluctuation induced by single particle irradiation in a device. A plurality of devices varying in size are tested respectively before and after irradiation to obtain threshold voltage distribution, such that a threshold voltage fluctuation induced by irradiation is obtained and used to correct a process fluctuation model, so as to correct a design margin of the devices working under the irradiation.