Embodiments relate to systems and methods for reducing errors in sensor devices and systems. In embodiments, the sensor devices comprise magnetic field sensor devices, such as ordinary or vertical Hall sensor devices, and the error to be reduced is a residual offset error, though in other embodiments other sensor devices can be used and/or other types of errors can be targeted for reduction or elimination. In one embodiment, at least two such sensor devices not electrically coupled with one another are sequentially operated in a spinning current-type mode such that an individual output signal from each of the at least two sensor devices is obtained. A total output signal can then be calculated, such as by averaging or otherwise combining the individual output signals from each sensor device.

An active switching rectifier circuit uses a MOSFET and applies a current based control to turn the MOSFET on and off. The MOSFET has its source and drain connected between an AC phase or neutral line and the DC output. A current detection and control circuit has an input current conductor coupled in series with the source-drain current of the MOSFET; it outputs a switching control signal based on the current in its input conductor and applies the signal to the gate of the MOSFET for on/off control. A Hall-effect switch may be used in the current detection and control circuit. The rectifier may also include a voltage supply circuit for supplying a DC voltage to the current detection and control circuit. The rectifier circuit can be adapted for various configurations including single-phase half-wave, center-tap dual-phase full-wave, single-phase full-wave, and three-phase full-wave.

A position sensing system has a trim unit to trim hall voltages generated by a first sensor and a second sensor in response to an excitation current, to compensate a non-orthogonality of the first sensor and the second sensor.

A Hall sensor has a Hall sensor element, which has multiple connection points spaced apart from one another. A supply source serves for feeding an exciter current into the Hall sensor element and is connected to a first and a second connection point of the Hall sensor element. The Hall sensor has a first and a second comparison device. The first comparison device has a first input connected to a third connection point of the Hall sensor element, a second input connected to a reference signal generator for an upper reference value signal, and an output for a first comparison signal. The second comparison device has a third input connected to the third connection point, a fourth input connected to a reference signal generator for a lower reference value signal, and an output for a second comparison signal. The outputs are connected to an evaluation device for generating an error signal as a function of the first and second comparison signal.

A vertical Hall effect sensor having three Hall effect regions interconnected in a ring can be operated in a spinning scheme. Each Hall effect region has three contacts: the first Hall effect region includes first, second, and third contacts; the second Hall effect region has fourth, fifth, and sixth contacts, and the third Hall effect region has seventh, eighth, and ninth contacts. Interconnections between the Hall effect regions are provided such that a first terminal is connected to a third contact, a second interconnection is arranged between the second and fourth contacts, a third terminal is connected to the sixth contact, a fourth interconnection is arranged between the fifth and seventh contacts, a fifth terminal is connected to the ninth contact, and a sixth interconnection is arranged between the first and eighth contacts.

The semiconductor device includes a Hall element, a first differential pair, a second differential pair, an output amplifier circuit, and a voltage divider circuit. The Hall element outputs a signal that is dependent on stress to be applied to a semiconductor substrate to the first differential pair. The voltage divider circuit divides a voltage into a divided voltage having a voltage dividing ratio that is dependent on the stress. The first differential pair outputs a first current based on the signal. The second differential pair outputs a second current based on the divided voltage and a reference voltage. The output amplifier circuit outputs a voltage based on the first and second currents. A gain of the output amplifier circuit is approximated by a sum of a difference between stress dependence coefficients of transconductances of the first and second differential pairs and a stress dependence coefficient of the voltage dividing ratio.

The present disclosure relates to chopper amplifier circuits featuring inherent chopper ripple suppression.

A Hall sensor circuit includes a first Hall sensor, a second Hall sensor, a first preamplifier circuit, a second preamplifier circuit, a subtractor circuit, and a duty cycling circuit. The first preamplifier circuit includes an input and an output. The input is coupled to the first Hall sensor. The second preamplifier circuit includes a first input, a second input, and an output. The first input is coupled to the second Hall sensor. The subtractor circuit includes a first input coupled to the output of the first preamplifier circuit, a second input coupled to the output of the second preamplifier circuit, and an output coupled to the second input of the second preamplifier circuit. The duty cycling circuit is coupled to the second preamplifier circuit and the second Hall sensor.

Devices and methods are provided where switches associated with a magnetic field sensor are used to provide error information. In particular, a device is provided that includes a magnetic field sensor, a plurality of switches associated with the magnetic field sensor, and a control circuit configured to control the plurality of switches and to provide at least one signal indicative of a fault based on operation of the switches.

Systems and methods for spin-based detection of electromagnetic radiation at terahertz and sub-terahertz frequencies is provided. The detector can include a heterostructure and an electrical circuit. The heterostructure can include a first layer formed of an antiferromagnetic material (AFM) in contact with a second layer of a heavy metal (HM) and a third layer. The third layer can generate an effective field oriented approximately parallel to an easy axis of the first layer and approximately parallel to a propagation direction of electromagnetic radiation. The circuit can be in electrical communication with the second layer. The first layer can inject a spin current into the second layer in response to receipt of electromagnetic radiation having a sub-terahertz or terahertz frequency. The second layer can convert the injected spin current into a potential difference. The circuit can be configured to output a signal corresponding to the potential difference.