A time-of-flight device comprises a pixel array including an array of pixel circuits, wherein a column of the array includes: a first pixel circuit including a first photodiode, a first capacitor and a second capacitor coupled to the first photodiode, and a second pixel circuit including a second photodiode, a third capacitor and a fourth capacitor coupled to the second photodiode, a first signal line coupled to the first capacitor, a second signal line coupled to the second capacitor, a third signal line coupled to the third capacitor, a fourth signal line coupled to the fourth capacitor, a first switch circuitry, a second switch circuitry, a first comparator coupled to the first signal line and the third signal line through the first switch circuitry, and a second comparator coupled to the second signal line and the fourth signal line through the second switch circuitry.

Apparatus for optical sensing includes first matrix of optical sensing elements, arranged on a semiconductor substrate in rows and columns. A second matrix of storage nodes is arranged on the substrate such that respective first and second storage nodes in the second matrix are disposed in proximity to each of the sensing elements within the first matrix. Switching circuitry couples each of the sensing elements to transfer photocharge to the respective first and second storage nodes. Control circuitry controls the switching circuitry in a depth sensing mode such that over a series of detection cycles, each of the sensing elements and a first neighboring sensing element are connected together to the respective first storage node during the first detection interval, and each of the sensing elements and the second neighboring sensing element are connected together to the respective second storage node during the second detection interval.

A sensor system with a plurality of sensors or sensor functions is provided. The sensors can include an event detection sensor, a time of flight sensor, and imaging sensor. The different sensors can be implemented on the same or different substrates. Accordingly, sensors with pixels having different or shared functions can be included in the sensor system. In operation, an event detection signal from an event detection sensor causes the operation of a time of flight sensor to be initiated. In response to the detection of an object within a critical range by the time of flight sensor, the imaging sensor is activated. The image sensing and event detection pixels can be provided as part of different arrays of pixels, or can be included within a common array of pixels.

A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

The present disclosure provides an imaging portion for a time-of-flight device, which has: at least one photo-detection element; at least one overflow gate for the at least one photo-detection element; at least one transfer gate configured to receive at least one transfer signal; at least one transfer gate switch configured to couple or to decouple the at least one overflow gate and the at least one transfer gate in response to at least one transfer gate switch signal.

The present disclosure provides an imaging portion for a time-of-flight device, which has: at least one photo-detection element; at least one overflow gate for the at least one photo-detection element; at least one transfer gate configured to receive at least one transfer signal; at least one transfer gate switch configured to couple or to decouple the at least one overflow gate and the at least one transfer gate in response to at least one transfer gate switch signal.

A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.

Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Provided is a beam steering apparatus including a driving pixel unit including a plurality of driving pixels that are respectively configured to supply a voltage or a current, a light modulator including a plurality of pixels corresponding to the plurality of driving pixels, each pixel of the plurality of pixels being configured to modulate incident light, and a wiring layer including a wiring structure configured to electrically connect the plurality of driving pixels to the plurality of pixels, wherein the wiring structure includes a first conductive wire connected to the plurality of driving pixels, a second conductive wire connected to the plurality of pixels, and at least one third conductive wire connected between the first conductive wire and the second conductive wire, and wherein the first conductive wire, the second conductive wire, and the at least one third conductive wire form a step structure.