Provided is a cable device having an improved electromagnetic interference (EMI) shielding performance. The cable device includes: a cable including an optical fiber; a connector including a printed circuit board connected to the cable and including a ground electrode, and a conductive case; a connecting member provided around a connection between the cable and the connector; and a metal shell surrounding the cable inside of the connecting member, the metal shell being configured to shield electromagnetic interference of the cable and the connector.

An opto-electric hybrid board that sequentially includes an optical waveguide and an electric circuit boardtoward one side in a thickness direction. The electric circuit boardincludes a metal supporting layer, an insulating base layerdisposed on a one-side surface in the thickness direction of the metal supporting layer, a plurality of conductive layers sequentially disposed at one side in the thickness direction, and an intermediate insulating layerdisposed between the conductive layers . At least one layer selected from the group consisting of the metal supporting layer and the conductive layers is electrically insulated from the other layers.

A package includes a photonic integrated circuit die, an electric integrated circuit die, and an encapsulant. The photonic integrated circuit die includes a semiconductor substrate and a waveguide. The semiconductor substrate has a notch. The waveguide is disposed over the semiconductor substrate. A portion of the waveguide is located within a span of the notch of the semiconductor substrate. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The encapsulant laterally encapsulates the electric integrated circuit die.

A manufacturing method and application of an optical interconnection module are disclosed. According to example embodiments, by providing the method of manufacturing the optical interconnection module in which an optical fiber optical coupler is disposed at its lower portion by using the FOWLP process, it is possible to provide advantages such as lightness, thinness and compactness of the optical interconnection module, guarantee of signal integrity, and high yield in mass production. Further, it is possible to provide a structure providing an electrical ground to an electronic chip by mounting the electronic chip on ETB and capable of being used as a heat dissipation path.

A package includes a photonic integrated circuit die, an electric integrated circuit die, and an encapsulant. The photonic integrated circuit die includes a semiconductor substrate, an insulation layer, and a waveguide. The semiconductor substrate has a notch. The insulation layer is disposed on the semiconductor substrate. The waveguide is disposed on the insulation layer. The notch of the semiconductor substrate is underneath at least a portion of the waveguide. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The encapsulant laterally encapsulates the electric integrated circuit die.

A fiber optical transceiver includes a package, a plurality of lead frames provided with the package and protruding outward from the package, a first circuit board installed in the package and electrically connected to the plurality of lead frames, and an optical element provided on the first circuit board. The package includes a ceramic portion formed of ceramic and covered with a metallized film.

A III-V/SiN.sub.x hybrid integrated photonics platform is described. A wafer can include regions where SiN.sub.x waveguides are formed and regions where III-V waveguides have been grown heteroepitaxially from the Si substrate and formed lithographically to butt couple to the SiN.sub.x waveguides. Efficient optical coupling is possible between the SiN.sub.x and III-V waveguides (−2.5 dB loss/transition). A threading dislocation density (TDD) as low as 4×10.sup.6 cm.sup.−2 can be obtained in the III-V waveguides. The TDD enables fully parallel fabrication of integrated III-V optoelectronic devices, allowing for complex photonic integrated circuits with many active components.

An optical transceiver can include a transmitter and a receiver. The optical transceiver is configured to mate with an electrical connector in first and second orientations that are opposite each other. In certain examples, a thermally conductive surface of the transceiver is configured to be placed in thermal communication with a heat dissipation member in one or both of the first and second orientations. Further examples of optical transceivers can be mounted to a base and placed in electrical communication with an electrical connector. A lid provides a compressive force that simultaneously makes electrical contact between the transceiver and a host printed circuit board (PCB) and provides a low impedance heat transfer path to dissipate heat generated during transceiver operation.

One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.

The disclosure relates to a connector arrangement having a first connector part and a second connector part, the second connector part being in the form of a receiving connector part having a receiver, and the receiver being connected to a first sensing device for sensing the signal received by the receiver. The connector arrangement is characterized in that the first connector part is in the form of a transmitting connector part that has a transmitter for the contactless transmission of a signal.