The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The acetal moiety is elected from a mono functional alkyl acetal moiety protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, an acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety; a di-functional acetal comprising moiety, linking and protecting two repeat units comprising Novolak phenolic hydroxy moieties, forming a linking point in said polymer component between two different polymer chains in said polymer component, and a mixture of any of these three types of acid cleavable acetal moieties. The PAC component is selected from said acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, a free PAC component, and a mixture of these two types of PAC components. The present invention also relates to the methods of using the present compositions in either in thick or thin film photoresist device manufacturing methodologies.

The present embodiment provides a transparent electrode, a transparent electrode production process and a photoelectric conversion device. The transparent electrode comprises a patterned electrode layer formed on a transparent substrate. The electrode layer has an electroconductive film containing metal nanowires and also has a film of N-graphene. In the graphene carbon skeleton of the N-graphene, carbon atoms are partly substituted with nitrogen atoms. The transparent electrode can be produced by: forming an electroconductive layer by coating with a dispersion containing metal nanowires; then forming an N-graphene film thereon; and subsequently patterning them.

A method for producing a metal pattern by processing a substrate having on its surface a metal layer with a photosensitive fiber having a specific composition, a method for producing a metal pattern, and a composition for producing the photosensitive fiber. The photosensitive fiber contains a positive photosensitive material. The positive photosensitive material may contain a novolac resin, etc. The method for producing a metal pattern includes a first step of forming a fiber layer of photosensitive resin on a substrate having on its surface a metal layer; a second step of exposing the fiber layer to light via a mask; a third step of developing the fiber layer with a developer to thereby form a photosensitive fiber pattern; and a fourth step of etching the metal layer with an etchant and removing the photosensitive fiber, to thereby form a network metal pattern.

A method of manufacturing a fine pattern using the following steps of: (1) coating a resist composition containing a novolak resin having an alkali dissolution rate of 100 to 3,000 Å on a substrate to form a resist composition layer; (2) subjecting said resist composition layer to exposure; (3) developing said resist composition layer to form a resist pattern; (4) subjecting said resist pattern to flood exposure; (5) coating a fine pattern forming composition on the surface of said resist pattern to form a fine pattern forming composition layer; (6) heating said resist pattern and said fine pattern forming composition layer to cure the regions of said fine pattern forming composition layer in the vicinity of said resist pattern and to form an insolubilized layer; and (7) removing uncured regions of said fine pattern forming composition layer.

A film patterning method, an array substrate, and a manufacturing method of an array substrate are disclosed. The film patterning method includes: applying photoresist on a film to be patterned; performing exposure and development on the photoresist, a region corresponding to a completely removed portion of the photoresist after the exposure and the development being a first region; post-baking the photoresist, so that the photoresist is melted and collapsed to change the region corresponding to the completely removed portion into a second region, the photoresist after post-baking forms into a mask pattern; and patterning the film by using the mask pattern as a mask.

The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

Disclosed herein is a photosensitive composition comprising a) at least one photoacid generator; b) at least one Novolak polymer; c) at least one acrylate polymer, comprising a component having structure (I); d) at least one glycidyl hydroxy benzoic acid condensate material comprising one or more compounds having structure (II); e) at least one heterocyclic thiol compound comprising a ring structure chosen from the general structures (III), (IIIa) or (IIIb); and f) at least one solvent. Disclose herein are also the methods of using this composition to form a resist pattern and the methods of using these resist patterns to produce metal lines. Disclosed herein are also compounds and mixtures of compounds having structure (II).

A resin and a photosensitive resin composition whereby a cured film exhibiting high extensibility, reduced stress, and high adhesion to metals can be obtained are provided. A resin (A) including a polyamide structure and at least any structure of an imide precursor structure and an imide structure, wherein at least any of the structures of the resin (A) include a diamine residue having an aliphatic group.

A resin composition which is configured such that if the resin composition is formed into a resin composition film that has a thickness of 3.0 μm after a heat treatment at a temperature within the range of 200-350° C., the resin composition film forms a heat-resistant resin film that has a light transmittance of 50% or more at a wavelength of 365-436 nm before the heat treatment, while having a light transmittance of 10% or less at a wavelength of 365-436 nm after the heat treatment. Provided is a resin composition having a function of absorbing ultraviolet light and visible light in a short wavelength range, which is suitable for the formation of a planarization film, an insulating layer and a partition wall that are used for organic light emitting devices or display devices.

The present invention relates to a photosensitive resin composition having high sensitivity, high bending resistance for the cured film, and high long-term reliability for an organic EL display device in which the cured film is used. The present invention is a photosensitive resin composition containing an alkali-soluble resin (a), a phenolic resin (b) having a halogen atom, and a photosensitive compound (c).