Patent classifications
G03F7/327
PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN SHEET, METHOD FOR PRODUCING HOLLOW STRUCTURE, AND ELECTRONIC COMPONENT
A photosensitive resin composition according to the present invention is a photosensitive resin composition comprising (a) an alkali-soluble polyimide, (b) an unsaturated bond-containing compound, (c) a thermally crosslinkable compound, (d-1) a photobleaching photopolymerization initiator having the structure represented by general formula (1), and (d-2) a photopolymerization initiator having the structure represented by general formula (1) and having a molar extinction coefficient at a wavelength of 405 nm of at least 1000 L/(mol.Math.cm). (In general formula (1), R.sup.1 represents a halogen atom, hydroxy group, carboxy group, nitro group, cyano group, —NR.sup.3R.sup.4, C1-20 monovalent hydrocarbon group, C1-20 acyl group, or C1-20 alkoxy group, and R.sup.3 and R.sup.4 each independently represent a hydrogen atom or C1-10 alkyl group, provided that at least a portion of the hydrogen atoms in the hydrocarbon group, acyl group, and alkoxy group may be substituted by a halogen atom, hydroxy group, carboxy group, nitro group, cyano group, or —NR.sup.3R.sup.4, and a hydrocarbon group present in the hydrocarbon group, in the acyl group, or in the alkoxy group may be interrupted by an ether bond, thioether bond, ester bond, thioester bond, amide bond, or urethane bond. R.sup.2 represents a C1-5 alkyl group. The symbol * in the formula indicates bonding with a neighboring group via the * moiety.) The photosensitive resin composition according to the present invention is also a photosensitive resin composition comprising (a) an alkali-soluble polyimide, (b) an unsaturated bond-containing compound, (c) a thermally crosslinkable compound, and (d) at least two species of oxime ester-type photopolymerization initiators. The photosensitive resin composition according to the present invention enables a high-sensitivity, high-quality photographic patterning of the cap portion of a hollow structure. A photosensitive resin sheet that uses the photosensitive resin composition according to the present invention is useful for application to the cap of the hollow structure of an electronic component that includes a hollow structure.
Curable composition, lithographic printing plate precursor, method for producing lithographic printing plate, and compound
A curable composition includes a salt compound having a) an organic anion in which, in Hansen solubility parameter, δd is 16 or more, δp is 16 or more and 32 or less, and δH is 60% or less of δp and b) a counter cation. A lithographic printing plate precursor having an image-recording layer containing the curable composition, a method for producing a lithographic printing plate using the lithographic printing plate precursor, and a compound that is used in the image-recording layer in the lithographic printing plate precursor are also set out.
Resist composition and method of forming resist pattern
A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component including a polymeric compound containing a structural unit having an acid decomposable group, the amount of the structural unit having an acid decomposable group, based on the combined total of all structural units contained in the base component being 51 mol % to 59 mol %, and the structural unit having an acid decomposable group includes a structural unit represented by general formula (a1-1) shown below (in which R represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Z represents a single bond or an alkyl group; and C.sub.p is a group represented by general formula (Cp-1) shown below). ##STR00001##
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
An actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a polarity that increases by an action of an acid, (B) a photoacid generator, (P) an amine oxide, and (D) an acid diffusion control agent (provided that acid diffusion control agents corresponding to the amine oxide are excluded), in which a content of the amine oxide (P) is from 0.01 ppm to 1,000 ppm with respect to a total mass of the actinic ray-sensitive or radiation-sensitive resin composition, and a mass ratio of the acid diffusion control agent (D) to the amine oxide (P) is more than 1 and 10,000 or less.
POSITIVE TYPE PHOTOSENSITIVE POLYSILOXANE COMPOSITION
[Problem] To provide a positive type photosensitive polysiloxane composition that can manufacture a cured film having a high surface smoothness, in which generation of wrinkles is suppressed even without adding a curing auxiliary or performing flood exposure. [Means for Solution] A positive type photosensitive polysiloxane composition comprising (I) a polysiloxane, (II) a carboxylic acid compound that is a monocarboxylic acid or a dicarboxylic acid, of 200 to 50,000 ppm based on the total mass of the composition, (III) a diazonaphthoquinone derivative, and (IV) a solvent, and a method for manufacturing a cured film using the composition.
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin having a polarity that increases by an action of an acid, (B) a photoacid generator, and an anion (P) which is one or more anions selected from the group consisting of NO.sub.3.sup.−, SO.sub.4.sup.2−, Cl.sup.−, and Br.sup.−, in which a content of the anion (P) is from 0.01 ppb to 100 ppm with respect to a total mass of the actinic ray-sensitive or radiation-sensitive resin composition, an actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a method for manufacturing an electronic device.
SILICON-CONTAINING COMPOSITION AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE
A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R.sup.2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.
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ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.
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RADIATION BASED PATTERNING METHODS
Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.
Method and composition for improving LWR in patterning step using negative tone photoresist
The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.