A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodized aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbon group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A radiation-sensitive resin composition includes: a resin including a structure unit having an acid-dissociable group; a radiation-sensitive acid generator; and a solvent. The radiation-sensitive acid generator includes at least two of compounds represented by formulae (1) to (3), provided that the compound represented by formula (1) and the compound represented by formula (3) within the scope of the compound represented by formula (2) are excluded. In the formulae (1) to (3), R.sup.1, R.sup.2 and R.sup.3 are each independently a group having a cyclic structure; X.sup.11, X.sup.12, X.sup.21, X.sup.22, X.sup.31 and X.sup.32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group, provided that both X.sup.11 and X.sup.12, both X.sup.21 and X.sup.22, and both X.sup.31 and X.sup.32 are not a hydrogen atom, respectively. ##STR00001##

Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

There are provided an apparatus and a method for providing a substrate, which can suppress any additional reaction between a developing solution and a photoresist (PR) film and prevent any PR remnants from being generated from such additional reaction. The method includes: supplying an organic developing solution onto a substrate while rotating the substrate at a first revolutions per minute (rpm); substituting the organic developing solution with a nonpolar rinse solution by supplying the nonpolar rinse solution onto the substrate while rotating the substrate at a second rpm, which is lower than the first rpm; continuing to supply the nonpolar rinse solution while rotating the substrate at a third rpm, which is higher than the second rpm; and continuing to supply the nonpolar rinse solution while rotating the substrate at a fourth rpm, which is between the second rpm and the third rpm.

There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance.

The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R.sup.1-R.sup.3 are each independently a group having a cyclic structure. X.sup.11-X.sup.32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X.sup.11 or X.sup.12, at least one of X.sup.21 or X.sup.22, and at least one of X.sup.31 or X.sup.32 are not a hydrogen atom, respectively. A.sup.11-A.sup.32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).

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[Problem] To provide a positive type photosensitive polysiloxane composition that can manufacture a cured film having a high surface smoothness, in which generation of wrinkles is suppressed even without adding a curing auxiliary or performing flood exposure. [Means for Solution] A positive type photosensitive polysiloxane composition comprising (I) a polysiloxane, (II) a carboxylic acid compound that is a monocarboxylic acid or a dicarboxylic acid, of 200 to 50,000 ppm based on the total mass of the composition, (III) a diazonaphthoquinone derivative, and (IV) a solvent, and a method for manufacturing a cured film using the composition.

Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

A composition for forming an underlayer film is used for forming an underlayer film under a resist film, the composition including a silicon atom-containing compound and a halogen-based solvent, in which a content of the halogen-based solvent is 1.0 ppb by mass to 50.0 ppm by mass with respect to a total mass of the composition for forming an underlayer film.

Photoresist compositions may include a photosensitive polymer, a photoacid generator (PAG), and a solvent. The photosensitive polymer may include a first repeating unit having a structure of Formula:

##STR00001##

wherein R.sup.1 is an oxygen atom or a methyl group, and R.sup.2 is a nitrobenzyl-based photo-labile protecting group. In methods of manufacturing an integrated circuit (IC), a photoresist film is formed on a lower film by using the photoresist composition including the photosensitive polymer, the PAG, and the solvent. A hydroxystyrene repeating unit is deprotected in a first area of the photoresist film by exposing the first area of the photoresist film to light, and thus, the nitrobenzyl-based photo-labile protecting group is separated from the hydroxystyrene repeating unit and a sensitizer is generated from the hydroxystyrene repeating unit. The exposed first area is removed using a developer.