A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.

##STR00001##

A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodized aromatic ring bonded to the nitrogen atom via a C.sub.1-C.sub.20 hydrocarbon group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A radiation-sensitive resin composition includes a resin having a partial structure represented by formula (1). R.sup.1 and R.sup.2 each independently represent a substituted or unsubstituted chain aliphatic hydrocarbon group having 1 to 6 carbon atoms or a substituted or unsubstituted alicyclic hydrocarbon group having 3 to 6 carbon atoms, or R.sup.1 and R.sup.2 are bonded to each other to form a part of a 3- to 6-membered cyclic structure together with the carbon atom to which R.sup.1 and R.sup.2 are bonded; R.sup.3 represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and containing a fluorine atom. No fluorine atom is bonded to carbon atoms located at α-, β- and γ-positions of the carbon atom to which R.sup.1 and R.sup.2 are bonded; and No fluorine atom is bonded to carbon atoms located at α- and β-positions of the carbon atom to which R.sup.3 is bonded.

##STR00001##

The present invention relates to a photosensitive resin composition having high sensitivity, high bending resistance for the cured film, and high long-term reliability for an organic EL display device in which the cured film is used. The present invention is a photosensitive resin composition containing an alkali-soluble resin (a), a phenolic resin (b) having a halogen atom, and a photosensitive compound (c).

The present photosensitive resin composition includes a polymer (A) having a structural unit (a1) represented by a formula (a1), a structural unit (a2) represented by a formula (a2), and a structural unit (a3) represented by a formula (a3), and a photoacid generator (B). In the formulae (a1) to (a3), R.sup.12, R.sup.22, and R.sup.32 each independently represent an organic group having 1 to 10 carbon atoms; R.sup.21 represents a substituted or non-substituted alkyl group having 1 to 10 carbon atoms; R.sup.31 represents a hydrogen atom, a substituted or non-substituted alkyl group having 1 to 10 carbon atoms, or a halogen atom; R.sup.13 and R.sup.23 each independently represent an acid dissociable group; R.sup.33 represents a hydroxyaryl group; and l, m and n independently represent an integer from 0 to 10.

##STR00001##

According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a resin P having a repeating unit represented by General Formula (P1) and a compound that generates an acid having a pKa of −1.40 or more upon irradiation with actinic rays or radiation; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided.

##STR00001## M.sup.p represents a single bond or a divalent linking group. L.sup.p represents a divalent linking group. X.sup.p represents O, S, or NR.sup.N1. R.sup.N1 represents a hydrogen atom or a monovalent organic group. R.sup.p represents a monovalent organic group.

The present invention is broadly concerned with novel directed self-assembly compositions, processes utilizing those compositions, and the resulting structures that are formed. The composition comprises a block copolymer of polystyrene and a polymethylmethacrylate block with polylactic acid side chains (“PS-b-P(MMA-LA)”). The block copolymer is capable of crosslinking and micro-phase separating into lines and spaces measuring about 10-nm or smaller with sub-20 nm L.sub.0 capability. Additionally, PS-b-P(MMA-LA) can be thermally annealed without a top-coat for simpler processing than the prior art. The polylactic acid side chains also increase the etch rate of the poly(methylmethacrylate) block when exposed to oxygen plasma, as well as lower the T.sub.g.

Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more surfactants, from one or more surfactant classes, such as derivatives of amino acids that have surface-active properties.

Provided are a coloring photosensitive composition including, a pigment derivative A1 in which a maximum value of a molar light absorption coefficient in a wavelength range of 400 to 700 nm is 3,000 L.Math.mol.sup.−1.Math.cm.sup.−1 or less, a pigment derivative A2 in which a maximum value of a molar light absorption coefficient in a wavelength range of 400 to 700 nm is more than 3,000 L.Math.mol.sup.−1.Math.cm.sup.−1, a pigment, a polymerizable compound, a photopolymerization initiator; a film formed from the coloring photosensitive composition; a color filter; a solid-state imaging element; and an image display device.

The present disclosure provides an apparatus for dispensing liquid material, including a dispensing arm, a wafer holder against the dispensing arm, a first nozzle on the dispensing arm, a first distance laterally spacing the first nozzle and a center of the wafer holder, and a first height vertically spacing the first nozzle and a surface of the wafer holder, and a second nozzle on the dispensing arm, a second distance laterally spacing the second nozzle and the center of the wafer holder, and a second height vertically spacing the second nozzle and the surface of the wafer holder, wherein the second distance is greater than the first distance, and the first height is greater than the second height.