A method for measuring a parameter of interest from a target and associated apparatuses. The method includes obtaining measurement acquisition data relating to measurement of the target and finite-size effect correction data and/or a trained model operable to correct for at least finite-size effects in the measurement acquisition data. At least finite-size effects in the measurement acquisition data is corrected for using the finite-size effect correction data and/or the trained model to obtain corrected measurement data and/or obtain a parameter of interest; and where the correcting does not directly determine the parameter of interest, determining the parameter of interest from the corrected measurement data.

A method for determining a focus actuation profile for one or more actuators of a lithographic exposure apparatus in control of a lithographic exposure process for exposure of an exposure area including at least two topographical levels. The method includes determining a continuous single focus actuation profile for the at least two topographical levels from an objective function including a per-level component operable to optimize a focus metric per topographical level for each of the at least two topographical levels.

In a focus control method of a spectroscopic measuring apparatus, the spectroscopic measuring apparatus having a first objective lens and a second objective lens equipped with a microsphere is provided. A sample is placed on a stage. A spectrum is obtained while moving the second objective lens vertically downward. A light intensity function that changes with a distance from a sample surface is obtained from the spectrum. A focal position of the second objective lens is determined from a threshold value of the light intensity function.

An apparatus includes a control unit configured to control an adjustment unit for adjusting imaging characteristics of an optical system. In a period spanning a plurality of lots, the control unit measures imaging characteristics of the optical system, and decides a prediction coefficient in a prediction formula to fit the prediction formula to measurement data obtained by the measurement in the period spanning the plurality of lots. The prediction formula is a polynomial function including a term representing a change in measurement value of the imaging characteristics caused by changing at least one of an illumination mode and an original between lots. The control unit decides the term of the polynomial function such that a fitting residual falls within an allowable range.

A system and method are disclosed for generating metrology measurements with second sub-system such as an optical sub-system. The method may include performing a training and a run-time operation. The training may include receiving first metrology data for device features from the first metrology sub-system (e.g., optical); generating first metrology measurements (e.g., critical dimensions, etc.); binning the device features into two or more device bins based on the first metrology measurements; and identifying representative metrology targets for the two or more device bins based on distributions of the first metrology measurements. The run-time operation may include receiving run-time metrology data (e.g., optical) of the representative metrology targets; and generating run-time metrology measurements based on the run-time metrology data.

An interchangeable-object holding apparatus for an EUV metrology system serves for holding and providing an interchangeable object, which is intended to be used interchangeably within the EUV metrology system. An interchangeable-object holder is drivably displaceable via at least one holding drive. A calibration device serves for calibrating a relative position of the interchangeable object in the interchangeable-object holder with respect to a calibration object of the interchangeable-object holding apparatus. The calibration device has a plurality of holder abutment bodies, secured to the interchangeable-object holder, and a plurality of calibration-object counter-abutment bodies, secured to the calibration object. At least one contact sensor of the calibration device serves for detecting a contact between the respective holder abutment body and the respective calibration-object counter-abutment body. An evaluation unit is in signal communication with the holder drive and the contact sensor. The evaluation unit serves for determining the relative position of the interchangeable object in the interchangeable-object holder with respect to the calibration object from captured position and measurement data of the holder drive and of the contact sensor. The result is an interchangeable-object holding apparatus with which the interchangeable-object holder can be positioned relative to the calibration object with a specified level of accuracy and with less metrological complexity of the calibration device compared with the prior art.

A method for manufacturing a semiconductor device, the method including forming a stack on a wafer, wherein the stack includes a plurality of layers of the stack, forming a photoresist pattern on the stack, determining whether a material of at least one layer among the plurality of layers of the stack has changed and whether at least one process among a plurality of processes for forming the plurality of layers of the stack has changed, changing a first wavelength for overlay measurement upon determination that the material of the at least one layer or the at least one process has changed, and measuring an overlay using the changed first wavelength for overlay measurement.

An extreme ultraviolet light generation system includes a chamber including a first region; a target supply unit supplying a target to the first region; a laser device outputting pulse laser light; an optical system including an optical element to guide the pulse laser light to the first region; an irradiation position adjustment mechanism adjusting a laser irradiation position; an EUV light concentrating mirror arranged such that the pulse laser light passes outside the EUV light concentrating mirror and is guided to the first region; a plurality of EUV sensors measuring radiation energies of the EUV light radiated from the first region in mutually different radiation directions, and having a geometric centroid located at a position away from the optical axis in a direction toward the EUV light concentrating mirror; and a processor controlling the irradiation position adjustment mechanism as setting a target irradiation position of the pulse laser light.

A method for using a smart EFEM in a semiconductor wafer process facility that incorporates at least one metrology testing device in a metrology unit positioned in operational proximity to the pre-alignment unit. The pre-alignment unit has a chuck that is used for both pre-alignment and for metrology, that two robotic arms shuttle the Si wafers onto while they are laying idle awaiting to be selected for processing. The metrology unit uses a bright elliptical scan light with light rays that are aligned in one axis and angled in another. The metrology scanning in the preferred embodiment is Bright Field-Dark Field metrology with coordinated motion between the metrology stage's movement, the rotation of the modulator wheel, the shuttering of the line scan cameras and if rotational scanning is performed, the rotation of the chuck. This provides a frame of reference for each scan image that eliminates or minimizes the need for image stitching.

A method of measuring an overlay or focus parameter from a target and associated metrology apparatus. The method includes configuring measurement radiation to obtain a configured measurement spectrum of the measurement radiation by: imposing an intensity weighting on individual wavelength bands of the measurement radiation such that the individual wavelength bands have an intensity according to the intensity weighting, the intensity weighting being such that a measured value for the overlay or focus parameter is at least partially corrected for the effect of target imperfections; and/or imposing a modulation on a measurement spectrum of the measurement radiation. The configured measurement radiation is used to measure the target. A value for the overlay or focus parameter is determined from scattered radiation resultant from measurement of the target.