G06F11/076

Reset and replay of memory sub-system controller in a memory sub-system

In an embodiment, a system includes a plurality of memory components and a processing device that is operatively coupled with the plurality of memory components. The processing device includes a host interface, an access management component, a media management component (MMC), and an MMC-restart manager that is configured to perform operations including detecting a triggering event for restarting the MMC, and responsively performing MMC-restart operations that include suspending operation of the access management component; determining whether the MMC is operating, and if so then suspending operation of the MMC; resetting the MMC; resuming operation of the MMC; and resuming operation of the access management component.

Workload adaptive scans for memory sub-systems

A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.

FAILURE DIAGNOSIS DEVICE, FAILURE DIAGNOSIS SYSTEM, HOUSEHOLD ELECTRICAL APPLIANCE, SENSOR UNIT, AND FAILURE DIAGNOSIS METHOD
20230021535 · 2023-01-26 ·

A failure diagnosis device includes a communication unit, a data comparison unit, and an eligibility determination unit. The communication unit acquires first physical quantity data and second physical quantity data of a type different from that of the first physical quantity data that are used for performing failure diagnosis of a home appliance acquired by a sensor unit, and first control information related to the second physical quantity data acquired by the home appliance. The data comparison unit compares the second physical quantity data with the first control information. The eligibility determination unit determines whether or not the first physical quantity data is eligible as data used for the failure diagnosis based on a comparison result obtained by the data comparison unit.

SERIAL PRESENCE DETECT RELIABILITY
20230021898 · 2023-01-26 ·

A serial presence detect (SPD) device includes nonvolatile memory to store SPD information. Parity information suitable for single error correct and double error detect (SEC-DED) is also stored in association with the SPD information in the nonvolatile memory. The combination of SPD information and parity information is organized into codewords addressable at each memory location. During an initialization period occurring after a power on reset and before the SPD device is accepting I2C commands, the SPD device checks each memory location (codeword) for errors. Each error detected is counted to provide an indicator of device health. Before the initialization period expires, the SPD device writes a corrected codeword back to the nonvolatile memory.

DATA PROTECTION IN NAND MEMORY USING INTERNAL FIRMWARE TO PERFORM SELF-VERIFICATION
20230230644 · 2023-07-20 · ·

The present disclosure provides a method of data protection for a NAND memory. The method can include programming a selected page of the NAND flash memory device according to programming data. The programming of the selected page can include a plurality of programming operations and a plurality of verifying operations, with ones of the plurality of verifying operations performed after corresponding ones of the plurality of programming operations to determine whether programmed memory cells of the selected page have threshold voltage levels according to the programming data. The method can also include determining a completion of the programming of the selected page based on each of the plurality of verification operations returning a pass result. The method can also include performing, after the determining, a read operation on the selected page by the NAND flash memory device to self-verify data stored at the selected page according to the programming data.

Acquiring Failure Information Span

An indication is received from a storage device that an attempt to read a portion of data from a block of the storage device has failed. A command is transmitted to the storage device to perform a scan on data stored at the block comprising the portion of data to acquire failure information associated with a plurality of subsets of the data stored at the block. The failure information associated with the plurality of subsets of the data stored at the block is received from the storage device.

Read soft bits through boosted modulation following reading hard bits

A memory sub-system configured to read soft bit data by adjusting the read voltage applied to read hard bit data from memory cells. For example, in response to a read command identifying a group of memory cells, a memory device is to: read the group of memory cells using a first voltage to generate hard bit data indicating statuses of the memory cells subjected to the first voltage; change (e.g., through boosted modulation) the first voltage, currently being applied to the group of memory cells, to a second voltage and then to a third voltage; reading the group of memory cells at the second voltage and at the third voltage to generate soft bit data (e.g., via an exclusive or (XOR) of the results of reading the group of memory cells at the second voltage and at the third voltage).

Asynchronous power loss impacted data structure

Systems and methods are disclosed, including rebuilding a logical-to-physical (L2P) data structure of a storage system subsequent to relocating assigned marginal group of memory cells of a memory array of the storage system, such as when resuming operation from a low-power state, including an asynchronous power loss (APL).

Estimating a bit error rate of data stored by a memory subsystem using machine learning
11704178 · 2023-07-18 · ·

Techniques for estimating raw bit error rate of data stored in a group of memory cells are described. Encoded data is read from a group of memory cells. A first population value is obtained based on a first number of memory cells in the group of memory cells having a read voltage within a first range of read voltages, each read voltage representing one or more bits of the encoded data. An estimated raw bit error rate of the data is determined to satisfy a first threshold. The determination is made using a first trained machine learning model and based in part on the first population value. A first media management operation is initiated in response to the determination that the estimated raw bit error rate satisfies the first threshold.

Regression-based calibration and scanning of data units

Read operations can be performed to read data stored at a data block. Parameters reflective of a separation between a pair of programming distributions associated with the data block can be determined based on the plurality of read operations. A read request to read the data stored at the data block can be received. In response to receiving the read request, a read operation can be performed to read the data stored at the data block based on the parameters that are reflective of the separation between the pair of programming distributions associated with the data block.