A semiconductor memory device includes a buffer die and a plurality of memory dies. Each of the memory dies includes a memory cell array, an error correction code (ECC) engine and a test circuit. The memory cell array includes a plurality of memory cell rows, each including a plurality of volatile memory cells. The test circuit, in a test mode, generates a test syndrome and an expected decoding status flag indicating error status of the test syndrome, receives test parity data generated by the ECC engine based on the test syndrome and a decoding status flag indicating error status of the test parity data, and determines whether the ECC engine has a defect based on comparison of the test syndrome and the test parity data and a comparison of the expected decoding status flag and the decoding status flag.

A memory device includes a first comparison circuit suitable for comparing read data read from a plurality of memory cells with write data written in the memory cells and outputting a comparison result, a path selection circuit suitable for transferring selected data selected among the read data and test data as read path data based on the comparison result of the first comparison circuit, and an output data alignment circuit suitable for converting the read path data into serial data to output the serial data as output data.

Described herein are methods and systems for controlling an integrated optics control system for quantum computing using a quantum bios chip. A quantum bios chip, comprising one or more qubit connection geometries and one or more error correction codes associated with the qubit connection geometries, receives instructions associated with a quantum computing application. The quantum bios chip configures one or more switching elements of an integrated optics control system coupled to the quantum bios chip, the switching elements controlling entanglement of one or more qubits of a quantum computer and the switching elements configured based upon a selected one of the one or more qubit connection geometries and one of the one or more error correction codes that is compatible with the selected one of the one or more qubit connection geometries.

Methods and apparatus are disclosed for implementing data augmentation within a storage controller of a data storage device based on machine learning data read from a non-volatile memory (NVM) array of a memory die. Some particular aspects relate to configuring the storage controller to generate augmented versions of training images for use in training a Deep Learning Accelerator of an image recognition system by rotating, translating, skewing, cropping, etc., a set of initial training images obtained from a host device and stored in the NVM array. Other aspects relate to controlling components of the memory die to generate noise-augmented images by, for example, storing and then reading training images from worn regions of the NVM array to inject noise into the images. Data augmentation based on data read from multiple memory dies is also described, such as image data spread across multiple NVM arrays or multiple memory dies.

A computer-implemented method includes refreshing a set of memory channels in a memory system substantially simultaneously, each memory channel refreshing a rank that is distinct from each of the other ranks being refreshed. Further, the method includes marking a memory channel from the set of memory channels as being unavailable for the rank being refreshed in the memory channel. In one or more examples, the method further includes blocking a fetch command to the memory channel for the rank being refreshed in the memory channel.

A method for memory protection includes receiving a burst-write instruction that includes data and a burst-write address. The data are segmented into a plurality of data blocks. One or more bits of the burst-write address, or a hash of the burst-write address are concatenated to respective data blocks to obtain data-and-write-address-bit (DWAB) segments. A SECDED ECC is executed on respective DWAB segments to generate a corresponding plurality of sets of parity bits (DWAB-PB). Respective DWAB-PB are concatenated to the corresponding data block to generate corresponding forward-error-correction (FEC) blocks, none of the FEC blocks including the burst-write address or the hash of the burst-write address. A burst-write command and a respective portion of a respective FEC block is sent to respective memory devices during a plurality of beats until all of the beats of the burst-write have been sent.

A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

A variety of applications can include apparatus and/or methods that provide parity data protection to data in a memory system for a limited period of time and not stored as permanent parity data in a non-volatile memory. Parity data can be accumulated in a volatile memory for data programmed via a group of access lies having a specified number of access lines in the group. A read verify can be issued to selected pages after programming finishes at the end of programming via the access lines of the group. With the programming of the data determined to be acceptable at the end of programming via the last of the access lines of the group, the parity data in the volatile memory can be discarded and accumulation can begin for a next group having a specified number of access lines. Additional apparatus, systems, and methods are disclosed.

A storage device is disclosed. The storage device may include storage for data. A controller may manage writing the data to the storage and reading the data from the reading storage. A data quality metric table may map a first number of errors to a first data quality metric and map a second number of errors to a second data quality metric. A transmitter may return the data quality metric table to a host.

A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.