A semiconductor device includes an error correction code circuit and a register circuit. The error correction code circuit is configured to generate first data according to second data. The register circuit is configured to generate reset information according to a difference between the first data and the second data, for adjusting a memory cell associated with the second data. A method is also disclosed herein.

A processing device can determine a configuration parameter based on a memory type of a memory component that is managed by a memory system controller. The processing device can receive data from a host system. The processing device can generate, by performing a memory operation using the configuration parameter, an instruction based on the data. The processing device can identify a sequencer of a plurality of sequencers that are collocated, within a single package external to the memory system controller, wherein each sequencer of the plurality of sequencers interfaces with a respective memory component. The processing device can send the instruction to the sequencer.

A data storage circuit includes memory, an error correcting code (ECC) storage circuit, and control circuitry. The memory is configured to store a data value comprising a plurality of fields. Each of the fields is independently writable. The ECC storage circuit is configured to store an ECC value corresponding to the data value. The control circuitry is configured to receive a field value to be written into one of the fields, and store the field value in the one of the fields by writing only the field value to the memory. The control circuitry is also configured to retrieve the ECC value from the ECC storage circuit, compute an updated ECC value based on the ECC value retrieved from the ECC storage circuit and the field value, and store the updated ECC value in the ECC storage circuit.

In described examples, a memory module includes a memory array with a primary access port coupled to the memory array. Error correction logic is coupled to the memory array. A statistics register is coupled to the error correction logic. A secondary access port is coupled to the statistics register to allow access to the statistics register by an external device without using the primary interface.

A method and apparatus for determining the sector size and concomitant host metadata size to determine the difference between total size of the data block to be stored, and using the difference for parity data. This allows an increase in parity bits available for smaller sector sizes and/or data with smaller host metadata sizes. Because the amount of space available for additional parity bits is known, data with lower numbers of parity bits may be assigned to higher quality portions a memory array written with longer programming trim times, and/or written to memory dies with good redundant columns, further increasing performance and reliability.

A method of screening weak bits in a memory array includes dividing the memory array into a first and a second memory array, storing a first set of data in the first memory array, performing a first baking process on the first memory array or applying a first magnetic field to the first memory array, determining that a first portion of the first set of data stored in the first memory array is altered by the first baking process or the first magnetic field, and at least one of replacing memory cells of a first set of memory cells that are storing the first portion of the first set of data with corresponding memory cells in the second memory array of the memory array, or not using the memory cells of the first set of memory cells storing the first portion of the first set of data.

A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.

A processing system is described. The processing system comprises a microprocessor, a memory controller, a resource and a communication system. The microprocessor is configured to send read requests in order to request the transmission of first data, or write requests comprising second data. The memory controller is configured to read third data from a memory. The processing system comprises also a safety monitor circuit comprising an error detection circuit configured to receive data bits and respective Error Correction Code, ECC, bits, wherein the data bits correspond to the first, second or third data. The safety monitor circuit calculates further ECC bits and generates an error signal by comparing the calculated ECC bits with the received ECC bits. A fault collection and error management circuit receives the error signal from the safety monitor circuits. For example the safety monitor circuit comprises a test circuit configured to provide modified data bits and/or modified ECC bits to the error detection circuit as a function of connectivity test control signals, whereby the error detection circuit asserts the error signal as a function of the connectivity test control signals. The processing system comprises also a connectivity test control circuit comprising control registers programmable via the microprocessor, wherein the connectivity test control signals are generated as a function of the content of the control registers.

Embodiments provide a scheme for non-parametric PV-level modeling and an optimal read threshold voltage estimation in a memory system. A controller is configured to: generate multiple optimal read threshold voltages corresponding to multiple sets of two cumulative distribution function (CDF) values, respectively; perform read operations on the cells using a plurality of read threshold voltages; generate cumulative mass function (CMF) samples based on the results of the read operations; receive first and second CDF values, selected from among a plurality of CDF values, each CDF value corresponding to each CMF sample; and estimate an optimal read threshold voltage corresponding to the first and second CDF values, among the multiple optimal read threshold voltages.

A processing device in a memory sub-system detects a preemptive power loss condition in the memory sub-system and, in response, causes operations of a local media controller associated with a memory device in the memory sub-system to be suspended, wherein responsive to being suspended, the local media controller to perform power loss handling operations to complete a subset of a plurality of pending memory access operations, and wherein to perform the power loss handling operations, the local media controller to complete the subset of the plurality of pending memory access operations for which an acknowledgment signal has been sent to a requestor. The processing device further detects a full power loss and restore condition in the memory sub-system, responsive to detecting the full power loss and restore condition, initializes the memory device and causes operations of the local media controller to resume.