An integrated circuit (IC) device for detecting errors within a register, the IC device includes registers and parity checking circuitry. The parity checking circuitry is coupled to the registers and comprises a first parity circuitry, a second parity circuit, and error detection circuitry. The first parity circuit receives first register values from the registers and determine a first value from the first register values. The second parity circuit is receives second register values from the registers and determines a second value from the second register values. The error detection circuitry compares the first value and the second value to detect a first error within the registers, and output an error signal indicating the first error.

A memory device to use added known data as part of data written to memory cells with redundant data generated according to an Error Correction Code (ECC). The code rate of the ECC may limit its capability to recover from excessive errors in the stored data. To reduce the errors, the added data retrieved from the memory cells can be corrected without using the ECC. Subsequently, remaining errors can be corrected via the ECC. Optionally, the added data can be configured to be the same as the data represented by an erased state of a subset of the memory cells such that when the subset is used to store the added data, the subset remains in the erased state to reduce wearing. Different subsets can be used to store added data for different write operations to distribute the benefit of reduced wearing.

A memory system for storing data is disclosed, the memory system including a plurality of memory devices configured to store data, each memory device having a plurality of bits, the memory devices configured and associated to work together as a rank to respond to a request; a memory control circuit associated with the plurality of memory devices and configured to output command and control signals to the plurality of memory devices; a detector for detecting a bit error in an operation; and a controller for remapping the bit error to a spare bit lane in response to the detector detecting the bit error.

An apparatus comprising a memory array including a plurality of memory cells arranged in a plurality of columns and a plurality of rows is provided. The apparatus further comprises circuitry configured to perform an error detection operation on the memory array to determine a raw count of detected errors, to compare the raw count of detected errors to a threshold value to determine an over-threshold amount, to scale the over-threshold amount according to a scaling algorithm to determine a scaled error count, and to store the scaled error count in a user-accessible storage location.

Provided is a storage apparatus that reduces the power needed to write corrected data back to a memory.

The storage apparatus includes a memory and a write control section. The memory stores data in units of multiple cells each representing a predetermined value. The write control section receives write-back data having a specific value in a position corresponding to at least one of the multiple cells, as well as a write-back command regarding the specific value. The write control section performs control to write the specific value only to the cell corresponding to the position indicative of the specific value in the write-back data.

Devices and techniques for fatal error logging in a memory device are described herein. For example, a read request can be received for a component of the memory device. A fatal error indication of an error that prevents correct execution of read request can be detected. Diagnostic information for the failure indication can be collected. A response to the read request can then be made with a portion of the diagnostic information as payload instead of the user data that would have occupied the payload had the read succeeded. Metadata in the response can be used to communicate an error code.

A method for operating a memory includes: reading data and an error correction code from a memory core; correcting an error of the read data based on the read error correction code to produce error-corrected data; generating new data by replacing a portion of the error-corrected data with write data, the portion becoming a write data portion; generating a new error correction code based on the new data; and writing the write data portion of the new data and the new error correction code into the memory core.

A semiconductor memory includes storage arrays, at least one verification module and gating circuits. Each verification module corresponds to multiple storage arrays. The verification module is configured to verify whether an error occurs in data information of the corresponding storage arrays. Each verification module is connected to a group of global data buses. The gating circuits are respectively connected to the storage arrays and the global data buses, and the gating circuits are configured to control on and off of a data transmission path connecting the global data buses to the storage arrays.

The methods and systems improve uncorrectable error (UE) and silent data corruption (SDC) rates for memory chips and improve error correction of the memory chips. The systems may include a memory bank with a plurality of memory chips in communication with a memory controller. The memory bank may use one additional memory chip that stores a bitwise parity of the data stored in the remaining memory chips of the memory bank. The parity bits are used to rebuild corrupted data when a UE occurs. The parity bits are also used to detect whether a SDC occurred in the data.

A method of identifying errors or manipulations of data or software, includes receiving a first hash value stored in a first block of the memory, receiving a second hash value from a reference memory, and comparing the hash values. If different, error correction information and the content of the first block is received. The content of the first block is reconstructed by in accordance with the error correction information, generating a hash value and comparing the hash value of the modified content with the received first hash value, until the modified content and the received hash values are identical. The content of the first block received from the reference memory and the content of the reconstructed first block stored in the memory of the device are compared for identifying the differences in the content.