A storage system caches logical-to-physical address table entries read in volatile memory. The logical-to-physical address table entries are stored in codewords. The storage system can vary a number or size of an entry in a codeword. Additionally or alternatively, each codeword can store both complete and partial logical-to-physical address table entries. In one example, a codeword having 62 bytes of data and two bytes of error correction code stores 15 complete logical-to-physical address table entries and one partial logical-to-physical address table entry, where the remainder of the partial entry is stored in another codeword. This configuration strikes a good balance between storage space efficiency and random-access write performance.

A storage apparatus includes an interface and storage circuitry. The interface communicates with a plurality of memory cells, and an individual one of the plurality of memory cells stores data in multiple programming levels. The storage circuitry configured to program data to a first group of multiple memory cells in a number of programming levels larger than two, using a One-Pass Programming (OPP) scheme that results in a first readout reliability level. After programming the data, the storage circuitry is further configured to read the data from the first group, and program the data read from the first group to a second group of the memory cells, in a number of programming levels larger than two, using a Multi-Pass Programming (MPP) scheme that results in a second readout reliability higher than the first reliability level, and reading the data from the second group of the memory cells.

Hard errors are determined for an unsuccessful decoding of codeword bits read from NAND memory cells via a read channel and input to a low-density parity check (LDPC) decoder. A bit error rate (BER) for the hard errors is estimated and BER for the read channel is estimated. Hard error regions are found using a single level cell (SLC) reading of the NAND memory cells. A log likelihood ratio (LLR) mapping of the codeword bits input to the LDPC decoder is changed based on the hard error regions, the hard error BER, and/or the read channel BER.

An integrated circuit (IC) includes: a storage having a storage interface and addressable bytes, the storage interface coupled to first and second sets of peripheral terminals; control circuitry having control circuitry inputs and control circuitry outputs, the control circuitry inputs coupled to the storage interface and configured to receive configuration bits provided by the storage responsive to a control circuitry update trigger, and the control circuitry outputs coupled to first and second sets of peripheral outputs; and a cyclic-redundancy check (CRC) engine coupled to the storage interface, the CRC engine configured to distinguish between purposeful updates to the data in the storage and bit errors in the data in the storage.

A semiconductor memory device includes a memory cell array, an error correction circuit, an error log register and a control logic circuit. The memory cell array includes a plurality of memory bank arrays and each of the memory bank arrays includes a plurality of pages. The control logic circuit is configured to control the error correction circuit to perform an ECC decoding sequentially on some of the pages designated at least one access address for detecting at least one bit error, in response to a first command received from a memory controller. The control logic circuit performs an error logging operation to write page error information into the error log register and the page error information includes a number of error occurrence on each of the some pages determined from the detecting.

A system-on-chip (SoC) can include a processor, a network controller configured to provide a network interface, and a memory controller configured to perform memory scrubbing. A memory patrol driver executing on the processor can initiate direct memory access (DMA) transfers to read successive portions of the memory by configuring corresponding DMA descriptors at a certain time interval. The network controller can perform each DMA transfer to read a corresponding portion of the memory, which can cause the memory controller to scrub the corresponding portion of the memory. The scrubbed data is sent to the network controller, which is discarded by the network controller.

A method of operating a nonvolatile memory system including a memory device having a plurality of memory blocks includes selecting a source block among the plurality of memory blocks in the nonvolatile memory system, and performing a reclaim operation for the source block based on the number of program and erase cycles which have been performed on the source block.

A decoding method, a memory controlling circuit unit and a memory storage device are provided. The decoding method includes: performing a first type decoding operation for a first frame including a first codeword to obtain a second codeword. The method also includes: recording error estimate information corresponding to the first frame according to an execution result of the first type decoding operation. The method further includes: updating the first codeword in the first frame to the second codeword if the error estimate information matches a first condition; and performing a second type decoding operation for a block code including the first frame.

Disclosed embodiments include a memory device having a memory array that includes a first memory cell coupled to a first bit line and a second memory cell coupled to a second bit line and a sense amplifier that includes first and second transistors arranged in a cross-coupled configuration with third and fourth transistors, the first and second transistors being of a first conductivity type and the third and fourth transistors being of a second conductivity type, a first inverter having an input coupled to a first common drain terminal of the first and third transistors and an output coupled to the first bit line, and a second inverter having an input coupled to a second common drain terminal of the second and fourth transistors and an output coupled to the second bit line.

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller manages a plurality of namespaces for storing a plurality of kinds of data having different update frequencies. The controller encodes write data by using first coding for reducing wear of a memory cell to generate first encoded data, and generates second encoded data to be written to the nonvolatile memory by adding an error correction code to the first encoded data. The controller changes the ratio between the first encoded data and the error correction code based on the namespace to which the write data is to be written.