Embodiments include herein are directed towards a dynamic random access memory system. Embodiments may include a command queue that is configured to hold all commands that are currently selectable for bank operation and execution. Embodiments may further include bank logic operatively connected with the command queue. The bank logic may include a bank management module and a plurality of bank slices, wherein each of the plurality of bank slices is an independent, re-assignable bank tracking module.

A retimer includes a first port to couple to a die over a first interconnect, where the first interconnect includes a defined set of lanes and utilizes a first communication technology, and the die is located on a first package with the retimer. The retimer further includes a second port to couple to another retimer over a second interconnect, where the second interconnect utilizes a different second communication technology, and the second retimer is located on a different, second package to facilitate a longer reach communication channel.

An apparatus includes a memory sub-system comprising a plurality of memory blocks and a memory block defect detection component. The memory block defect detection component is to set, for a memory block among the plurality of memory blocks, a first block defect detection rate and determine whether the first block defect detection rate is greater than a threshold block defect detection rate for the at least one memory block. In response to a determination that the first block defect detection rate is greater than the threshold block defect detection rate for the memory block, the memory block defect detection component is to assert a program command on the memory block determine whether a program operation associated with assertion of the program command on the at least one memory block is successful. In response to a determination the program operation is unsuccessful, the memory block defect detection component is to determine that a failure involving a plane associated with the memory block and another plane of the memory sub-system has occurred.

Memory systems with a communications bus (and associated systems, devices, and methods) are disclosed herein. In one embodiment, a memory device includes an input/output terminal separate from data terminals of the memory device. The input/output terminal can be operably connected to a memory controller via a communications bus. The memory device can be configured to initiate a communication with the memory controller by outputting a signal via the input/output terminal and/or over the communications bus. The memory device can be configured to output the signal in accordance with a clock signal that is different from a second clock signal used to output or receive data signals via the data terminals. In some embodiments, the memory device is configured to initiate communications over the communication bus only when it possesses a communication token. The communication token can be transferred between memory devices operably connected to the communications bus.

According to an embodiment, a memory device includes a memory cell array including a plurality of memory cells; and a control logic which includes a mode register, performs a refresh operation in response to a refresh command, generates an internal mode register write command in response to the refresh command in a first mode, and does not generate the internal mode register write command in response to the refresh command in a second mode.

An integrated circuit device includes a memory controller coupleable to a memory. The memory controller to schedule memory accesses to regions of the memory based on memory timing parameters specific to the regions. A method includes receiving a memory access request at a memory device. The method further includes accessing, from a timing data store of the memory device, data representing a memory timing parameter specific to a region of the memory cell circuitry targeted by the memory access request. The method also includes scheduling, at the memory controller, the memory access request based on the data.

A system includes a memory controller and a memory device having a command interface and a plurality of memory banks, each with a plurality of rows of memory cells. The memory controller transmits an auto-refresh command to the memory device. Responsive to the auto-refresh command, during a first time interval, the memory device performs refresh operations to refresh the memory cells and the command interface of the memory device is placed into a calibration mode for the duration of the first time interval. Concurrently, during at least a portion of the first time interval, the memory controller performs a calibration of a data interface circuit of the memory device. The auto-refresh command may specify an order in which memory banks of the memory device are to be refreshed, such that the memory device sequentially refreshes a respective row in the plurality of memory banks in the specified bank order.

According to various aspects, a memory controller may schedule ZQ commands to periodically calibrate individual memory ranks in a multi-rank memory. The memory controller may schedule a ZQ short command at each ZQ interval and record that the ZQ short command was missed with respect to a memory rank in a self-refresh mode at the ZQ interval. After the missed ZQ short commands reaches a first threshold, a ZQ long command may be scheduled at the next ZQ interval and normal ZQ behavior may resume in the event that the memory rank exits the self-refresh mode and the ZQ long command is executed. However, if the memory rank stays in the self-refresh mode until missed ZQ long commands reaches a second threshold, the memory controller may trigger a ZQ long command once the memory rank exits the self-refresh mode and skip a next ZQ calibration before resuming normal ZQ behavior.

Systems and method are directed to accessing a Dynamic Random Access Memory (DRAM) system. A DRAM controller is designed to determine that a DRAM bank of a DRAM system is in a self-refresh state and allow one or more commands to access the DRAM bank without exiting the self-refresh state. The DRAM controller may select these one or more commands, based on one or more of a clock frequency, traffic conditions related to requests for accessing the DRAM bank, or a command type. The one or more commands may include at least one of read (RD), write (WR), or precharge (PRE) commands received while the DRAM bank is in the self-refresh state.

A controller for controlling a dynamic random access memory (DRAM) comprising a plurality of blocks. A block is one or more units of storage in the DRAM for which the DRAM controller can selectively enable or disable refreshing. The DRAM controller includes flags each for association with a block of the blocks of the DRAM. A sanitize controller determines a block is to be sanitized and in response sets a flag associated with the block and disables refreshing the block. In response to subsequently receiving a request to read data from a location in the block, if the flag is clear, the DRAM controller reads the location and returns data read from it. If the flag is set, the DRAM controller refrains from reading the DRAM and returns a value of zero.