A semiconductor memory device includes a command buffering unit suitable for receiving and buffering a command signal based on an enable control signal, a fuse array suitable for programming data based on the command signal, and an enable control unit suitable for generating the enable control signal, wherein an activation operation on the command buffering unit by the enable control signal is controlled during a programming operation period of the fuse array.

Apparatuses, systems, and methods for a memory-directed access pause. A controller may perform access operations on a memory by providing commands and addresses. The memory may monitor the addresses to determine if one or more forms of attack (deliberate or inadvertent) is occurring. If an attack is detected, the memory may issue an alert signal (e.g., along an alert bus) and also provide pause data (e.g., along a data bus). The pause data may specify a length of time, and responsive to the alert and the pause data, the controller may suspend access operations on the memory for the length of time specified in the pause data. The memory may use the time when access operations are paused to refresh itself, for example to heal the damage caused by the attack.

Systems, apparatuses, and methods for performing efficient memory accesses for a computing system are disclosed. In various embodiments, a computing system includes a computing resource and a memory controller coupled to a memory device. The computing resource selectively generates a hint that includes a target address of a memory request generated by the processor. The hint is sent outside the primary communication fabric to the memory controller. The hint conditionally triggers a data access in the memory device. When no page in a bank targeted by the hint is open, the memory controller processes the hint by opening a target page of the hint without retrieving data. The memory controller drops the hint if there are other pending requests that target the same page or the target page is already open.

A memory controller, a memory system managing refresh operations for respective banks and an operating method of the memory controller are provided. The operating method of the memory controller includes determining the banks requested for access by analyzing an address, selecting at least one bank predicted to be accessed based on the determination result, setting a refresh order of the banks according to the selecting result, and controlling refresh operations for the banks according to the set order.

Disclosed is a memory package. The memory package includes a nonvolatile memory chip, a volatile memory chip of which an access speed is faster than an access speed of the nonvolatile memory chip, and a logic chip for performing a refresh operation about the volatile memory chip in response to a refresh command from an external device, and migrating at least a portion of data stored in the nonvolatile memory chip to the volatile memory chip when the refresh operation is performed.

Detection logic of a memory subsystem obtains a threshold for a memory device that indicates a number of accesses within a time window that causes risk of data corruption on a physically adjacent row. The detection logic obtains the threshold from a register that stores configuration information for the memory device, and can be a register on the memory device itself and/or can be an entry of a configuration storage device of a memory module to which the memory device belongs. The detection logic determines whether a number of accesses to a row of the memory device exceeds the threshold. In response to detecting the number of accesses exceeds the threshold, the detection logic can generate a trigger to cause the memory device to perform a refresh targeted to a physically adjacent victim row.

A memory unit (23,24) is proposed for a computer system having a processing unit and a data bus for transferring data between the processing unit and the memory unit. The memory unit (23,24) stores data at a plurality of locations (“data items”) in a logical memory space (32), such that each data item has an address given by at least one index variable. In addition to read and write commands, the memory unit is operative to receive a shift command in a predefined format and including shift data which indicates a source address in the logical space. Upon receiving the command, the memory unit is operative to recognise it as a shift command and accordingly perform a predefined shift function comprising (i) using the source address to identify a portion of data in the memory space and (ii) writing that portion of data to a different location in the memory space. Thus, the portion of data can be shifted within the memory space without a need to transfer the portion of data along the bus.

A memory device can be operated with a set of refresh control features. A host can access the memory device to discover the set of refresh control features. The host can command the memory device to change at least one of the set of refresh control features. The memory device can be operated with the original and/or changed set of refresh control features

Provided is an operating method of a storage device. The method includes providing temperature information of each of a plurality of volatile memory devices in the storage device to a host device; and receiving a setting command related to a refresh operation of the plurality of volatile memory devices from the host device, wherein the plurality of volatile memory devices are classified into groups based on temperature information, and wherein the setting command indicates a number of rows of the plurality of volatile memory devices to be refreshed differently for each of the groups based on the temperature information.

A memory system includes two or more memory controllers capable of accessing the same dynamic, random-access memory (DRAM), one controller having access to the DRAM or a subset of the DRAM at a time. Different subsets of the DRAM are supported with different refresh-control circuitry, including respective refresh-address counters. Whichever controller has access to a given subset of the DRAM issues refresh requests to the corresponding refresh-address counter. Counters are synchronized before control of a given subset of the DRAM is transferred between controllers to avoid a loss of stored data.