Memory devices and a memory controller that controls such memory devices. Multiple memory devices receive commands and addresses on a command/address (C/A) bus that is relayed point-to-point by each memory device. Data is received and sent from these devices to/from a memory controller in a point-to-point configuration by adjusting the width of each individual data bus coupled between the individual memory devices and the memory controller. Along with the C/A bus are clock signals that are regenerated by each memory device and relayed. The memory controller and memory devices may be packaged on a single substrate using package-on-package technology. Using package-on-package technology allows the relayed C/A signals to connect from memory device to memory device using wire bonding. Wirebond connections provide a short, high-performance signaling environment for the chip-to-chip relaying of the C/A signals and clocks from one memory device to the next in the daisy-chain.

A module board and a memory module are provided. The module board includes a first branch line for connecting a clock signal terminal disposed on at least one surface to a first branch point; a first signal line for connecting the first branch point to a first module clock signal terminal; a second signal line for connecting the first module clock signal terminal to the k.sup.th module clock signal terminal and a first termination resistance terminal; a third signal line for connecting the first branch point to a (k+1).sup.th module clock signal terminal; and a fourth signal line for connecting the (k+1).sup.th module clock signal terminal to a 2k.sup.th module clock signal terminal and the second termination resistance terminal, wherein a length of the third signal line is greater than a sum of a length of the first signal line and a length of the second signal line.

A circuit for a bus system is provided. The circuit includes: an ascertainment circuit, which is configured to ascertain a first state in which an absolute difference of a voltage between two bus-side terminals is above a threshold value, to ascertain a second state in which the absolute value of the voltage between the two bus-side terminals is below the threshold value, to ascertain a bit boundary as a function of a number of state transitions between the first and second state, and to ascertain at least one time window, the start of which is situated before the bit boundary and the end of which is situated after the bit boundary; and a suppression circuit, which is configured to be activated when a state transition from the first state into the second state occurs within the ascertained time window.

Memory devices and a memory controller that controls such memory devices. Multiple memory devices receive commands and addresses on a command/address (C/A) bus that is relayed point-to-point by each memory device. Data is received and sent from these devices to/from a memory controller in a point-to-point configuration by adjusting the width of each individual data bus coupled between the individual memory devices and the memory controller. Along with the C/A bus are clock signals that are regenerated by each memory device and relayed. The memory controller and memory devices may be packaged on a single substrate using package-on-package technology. Using package-on-package technology allows the relayed C/A signals to connect from memory device to memory device using wire bonding. Wirebond connections provide a short, high-performance signaling environment for the chip-to-chip relaying of the C/A signals and clocks from one memory device to the next in the daisy-chain.

Apparatuses and methods for identifying memory devices of a semiconductor device sharing an external resistance are disclosed. A memory device of a semiconductor device may be set in an identification mode and provide an identification request to other memory devices that are coupled to a common communication channel. The memory devices that are coupled to the common communication channel may share an external resistance, for example, for calibration of respective programmable termination components of the memory devices. The memory devices that receive the identification request set a respective identification flag which can be read to determine which memory devices share an external resistance with the memory device having the set identification mode.

A low current line termination circuit includes first and second input interfaces each configured to receive a Vreceive+ and a Vreceive− voltage, respectively. The circuit further includes a first diode connected transistor (“DCT”) coupled to the second input interface, a first switching transistor (“ST”) coupled to the first DCT and to the first input interface, and a first delay element coupled between one of the input interfaces and a gate of the first ST. The circuit further includes a second DCT coupled to the one of the two input interfaces, a second ST coupled to the second DCT and to the second input interface, and a second delay element coupled between another of the two input interfaces and a gate of the second ST.

Methods for reducing boot time of a system-on-a-chip (SOC) by reducing double data rate (DDR) memory training and memory context restore. Dynamic random access memory (DRAM) controller and DDR physical interface (PHY) settings are stored into a non-volatile memory and the DRAM controller and DDR PHY are powered down. On system resume, a basic input/output system restores the DRAM controller and DDR PHY settings from non-volatile memory, and finalizes the DRAM controller and DDR PHY settings for operation with the SOC. Reducing the boot time of the SOC by reducing DDR training includes setting DRAMs into self-refresh mode, and programing a self-refresh state machine memory operation (MOP) array to exit self-refresh mode and update any DRAM device state for the target power management state. The DRAM device is reset, and the self-refresh state machine MOP array reinitializes the DRAM device state for the target power management state.

The present disclosure is directed to an input/output module. In some embodiments, the input/output module includes: a plurality of communication channels, each channel of the plurality of communication channels configured to connect to one or more field devices; switch fabric configured to selectively facilitate connectivity between an external control module and the one or more field devices via the plurality of communication channels; a serial communications port configured for connecting the input/output module to the control module in parallel with a second input/output module, the serial communications port configured for transmitting information between the input/output module and the control module; and a parallel communications port configured for separately connecting the input/output module to the control module, the parallel communications port configured for transmitting information between the input/output module and the control module, and transmitting information between the input/output module and the second input/output module.

In one embodiment, an apparatus includes a host controller to couple to an interconnect to which a plurality of devices may be coupled. The host controller may include: a first driver to drive first information onto a first line of the interconnect; a second driver to drive a clock signal onto a second line of the interconnect; and a mode control circuit to cause the second driver to drive the clock signal onto the second line of the interconnect in a first mode and to cause the first driver and the second driver to drive differential information onto the first line and the second line of the interconnect in a second mode. Other embodiments are described and claimed.

An input module may include a first resistor and a second resistor coupled in series with the first resistor. The input module may also include a switch that may electrically isolate the second resistor based on a voltage output by an additional input module electrically coupled to the input module via a terminal base.