G06F13/4243

METHODS, FLASH MEMORY CONTROLLER, AND ELECTRONIC DEVICE FOR SD MEMORY CARD DEVICE
20220083481 · 2022-03-17 ·

A method for controlling data transmission mode of an SD memory card device, which at least operates under an SD mode, includes: sending a first power signal from an electronic device to the SD memory card device via pin VDD1 to control and make the SD memory card device enter an initial state; and, sending a second power signal via one of a pin VDD2 and a pin VDD3 to the SD memory card device, to control and make the SD memory card device enter an Linkup state of a PCIe mode wherein a voltage level of the second power signal is lower than a voltage level of the first power signal.

Data strobe calibration

Devices and techniques are disclosed herein for determining, using a host device, a timing relationship between a data strobe signal, such as from an embedded MultiMediaCard (eMMC) device, and an internal clock signal. The host device can control a delay circuit using the determined timing relationship, such as to align received read data for sampling, or to determine or adjust a delay value of the delay circuit.

Memory interface for a multi-threaded, self-scheduling reconfigurable computing fabric
11836524 · 2023-12-05 · ·

Representative apparatus, method, and system embodiments are disclosed for configurable computing. A representative memory interface circuit comprises: a plurality of registers storing a plurality of tables, a state machine circuit, and a plurality of queues. The plurality of tables include a memory request table, a memory request identifier table, a memory response table, a memory data message table, and a memory response buffer. The state machine circuit is adapted to receive a load request, and in response, to obtain a first memory request identifier from the load request, to store the first memory request identifier in the memory request identifier table, to generate one or more memory load request data packets having the memory request identifier for transmission to the memory circuit, and to store load request information in the memory request table. The plurality of queues store one or more data packets for transmission.

Inversion signal generation circuit
11152042 · 2021-10-19 · ·

An inversion signal generation circuit may include a transition detection signal generation circuit suitable for generating first to fourth transition detection signals, a first XOR gate suitable for receiving a fourth inversion signal and the first transition detection signal, and generating a first pre-inversion signal, a second XOR gate suitable for receiving the first pre-inversion signal and the second transition detection signal, and generating a second pre-inversion signal, a third XOR gate suitable for receiving the second transition detection signal and the third transition detection signal, a fourth XOR gate suitable for receiving the first pre-inversion signal and an output signal of the third XOR gate, and generating a third pre-inversion signal, a fifth XOR gate suitable for receiving the third pre-inversion signal and the fourth transition detection signal, and generating a fourth pre-inversion signal, and a first alignment circuit suitable for generating first to fourth inversion signals.

DATA COLLECTION APPARATUS, METHOD, AND PROGRAM
20210318665 · 2021-10-14 · ·

A collector (110) included in a data collection apparatus (100) performs data collection to collect data from a PLC (604, 605). A controller (150) included in the data collection apparatus (100) determines whether the collector (110) is valid depending on whether the collector (110) at a time when an instruction to start the data collection is provided matches the collector (110) at a preset time, and causes the collector (110) to start the data collection in response to the collector (110) being valid.

Systems And Methods For Detecting And Configuring Lanes In A Circuit System
20210319841 · 2021-10-14 · ·

An electronic circuit system includes a main device that generates first and second strobe signals and a clock signal, a first peripheral device that uses the first strobe signal to generate a first output signal in a first lane in response to the clock signal, and a second peripheral device that uses the second strobe signal to generate a second output signal in a second lane in response to the clock signal. The main device determines if the first peripheral device is coupled to the main device through the first lane based on the first output signal. The main device determines if the second peripheral device is coupled to the main device through the second lane based on the second output signal. The main device also has the ability to detect if a peripheral device is faulty and to select a valid configuration of peripheral devices.

MEMORY SYSTEM AND DATA TRANSMISSION METHOD
20210272608 · 2021-09-02 ·

A memory system of a high-speed operation can be realized by reducing an influence of reflection signals etc. caused by branching and impedance mismatching in various wirings between a memory controller and a memory module, and an influence due to transmission delays of data, command/address, and clocks in the memory module. To this end, a memory system comprises a memory controller and a memory module mounted with DRAMs. A buffer is mounted on the memory module. The buffer and the memory controller are connected to each other via data wiring, command/address wiring, and clock wiring. The DRAMs and the buffer on the memory module are connected to each other via internal data wiring, internal command/address wiring, and internal cock wiring. The data wiring, the command/address wiring, and the clock wiring may be connected to buffers of other memory modules in cascade. Between the DRAMs and the buffer on the memory module, high-speed data transmission is implemented using data phase signals synchronous with clocks.

FLASH-DRAM HYBRID MEMORY MODULE

In certain embodiments, a memory module includes a printed circuit board (PCB) having an interface that couples it to a host system for provision of power, data, address and control signals. First, second, and third buck converters receive a pre-regulated input voltage and produce first, second and third regulated voltages. A converter circuit reduces the pre-regulated input voltage to provide a fourth regulated voltage. Synchronous dynamic random access memory (SDRAM) devices are coupled to one or more regulated voltages of the first, second, third and fourth regulated voltages, and a voltage monitor circuit monitors an input voltage and produces a signal in response to the input voltage having a voltage amplitude that is greater than a threshold voltage.

Variable read latency on a serial memory bus
11106604 · 2021-08-31 · ·

Example apparatus, systems, and methods receive a request for data associated with an address and responsively access a memory array to obtain the data. Embodiments transition a bus from a first state to a second state and after the transitioning of the bus, drive the data onto the bus.

SYNCHRONOUS MEMORY BUS ACCESS TO STORAGE MEDIA
20210271617 · 2021-09-02 ·

A computing system having memory components, including first memory and second memory, wherein the first memory is available to a host system for read and write access over a memory bus during one or more of a first plurality of windows. The computing system further includes a processing device, operatively coupled with the memory components, to: receive, from a driver of the host system, a request regarding a page of data stored in the second memory; responsive to the request, transfer the page from the second memory to a buffer; and write the page from the buffer to the first memory, wherein the page is written to the first memory during at least one of a second plurality of windows corresponding to a refresh timing for the memory bus, and the refresh timing is controlled at the host system.