Patent classifications
G11B7/2433
LiDAR system and method of driving the same
A light detection and ranging (LiDAR) system is provided including a beam steering device configured to modulate a phase of light from a light source and to output light in a plurality of directions at the same time, a receiver including a plurality of light detection elements configured to receive light that has been irradiated onto an object in the plurality of directions from the beam steering device and reflected from the object, and a processor configured to analyze position-specific distribution and/or time-specific distribution of light received by the receiver and to individually process the light lights irradiated onto the object in the plurality of directions.
LiDAR system and method of driving the same
A light detection and ranging (LiDAR) system is provided including a beam steering device configured to modulate a phase of light from a light source and to output light in a plurality of directions at the same time, a receiver including a plurality of light detection elements configured to receive light that has been irradiated onto an object in the plurality of directions from the beam steering device and reflected from the object, and a processor configured to analyze position-specific distribution and/or time-specific distribution of light received by the receiver and to individually process the light lights irradiated onto the object in the plurality of directions.
SINTERED COMPACT TARGET AND METHOD OF PRODUCING SINTERED COMPACT
A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm.sup.2 of the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.
SINTERED COMPACT TARGET AND METHOD OF PRODUCING SINTERED COMPACT
A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm.sup.2 of the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.
INFORMATION RECORDING MEDIUM AND METHOD FOR PRODUCING SAME
An information recording medium and a method for producing the same according to the present disclosure are configured to have an information layer in which a larger amount of light for reproduction can be obtained, so that the medium is suitable for recording information at high recording density and is useful for a multi-layer optical disc that records a large amount of contents.
INFORMATION RECORDING MEDIUM AND METHOD FOR PRODUCING SAME
An information recording medium and a method for producing the same according to the present disclosure are configured to have an information layer in which a larger amount of light for reproduction can be obtained, so that the medium is suitable for recording information at high recording density and is useful for a multi-layer optical disc that records a large amount of contents.
RECORDING LAYER FOR OPTICAL DATA RECORDING MEDIUM, OPTICAL DATA RECORDING MEDIUM, AND SPUTTERING TARGET
A recording layer for an optical data recording medium according to one embodiment of the present invention makes it possible to record an information signal by irradiation with laser beam. The recording layer for an optical data recording medium comprises metal oxides including a Mn oxide, a W oxide, and a Sn oxide. The atomic ratio of Mn with respect to the total number of atoms of metal elements constituting the metal oxides is 3-40 atm %.
System on chip (SoC) based on neural processor or microprocessor
System on chips (SoCs) based on a microprocessor or a neural processor (e.g., brain-inspired processor) electrically coupled with electronic memory devices and/or optically coupled with an optical memory device, along with embodiment(s) of a building block (an element) of the microprocessor/neural processor, the electronic memory device and the optical memory device are disclosed. It should be noted that a microprocessor can be replaced by a graphical processor.
System on chip (SoC) based on neural processor or microprocessor
System on chips (SoCs) based on a microprocessor or a neural processor (e.g., brain-inspired processor) electrically coupled with electronic memory devices and/or optically coupled with an optical memory device, along with embodiment(s) of a building block (an element) of the microprocessor/neural processor, the electronic memory device and the optical memory device are disclosed. It should be noted that a microprocessor can be replaced by a graphical processor.
High density optical recording medium having multiple recording layers
Provided is an optical recording medium including two or more recording layers, and a light irradiation surface that is irradiated with light for recording an information signal on the two or more recording layers. Among the two or more recording layers, at least one layer other than a layer located on the deepest side from the light irradiation surface includes an oxide of a metal A, an oxide of a metal B, and an oxide of a metal C. The metal A is at least one kind among W, Mo, and Zr, the metal B is Mn, and the metal C is at least one kind among Cu, Ag, and Ni. Ratios of the metal A, the metal B, and the metal C satisfy a relationship of 0.46x1 (provided that, x1=a/(b+0.8c), a representing an atomic ratio [atom %] of the metal A with respect to the sum of the metal A, the metal B, and the metal C, b representing an atomic ratio [atom %] of the metal B with respect to the sum of the metal A, the metal B, and the metal C, and c representing an atomic ratio [atom %] of the metal C with respect to the sum of the metal A, the metal B, and the metal C.