Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.

Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.

In an integrated circuit component having a command interface to receive commands, a data interface to receive write data during a write-data reception interval, and first and second registers, control circuitry within the integrated circuit component responds to one or more of the commands by storing within the first register and the second register, respectively, a first control value that specifies a first termination to be applied to the data interface during the write-data reception interval, and a second control value that specifies a second termination to be applied to the data interface after the write-data reception interval transpires.

In an integrated circuit component having a command interface to receive commands, a data interface to receive write data during a write-data reception interval, and first and second registers, control circuitry within the integrated circuit component responds to one or more of the commands by storing within the first register and the second register, respectively, a first control value that specifies a first termination to be applied to the data interface during the write-data reception interval, and a second control value that specifies a second termination to be applied to the data interface after the write-data reception interval transpires.

Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.

Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.

Methods and apparatus for optimizing a quantum circuit. In one aspect, a method includes identifying one or more sequences of operations in the quantum circuit that un-compute respective qubits on which the quantum circuit operates; generating an adjusted quantum circuit, comprising, for each identified sequence of operations in the quantum circuit, replacing the sequence of operations with an X basis measurement and a classically-controlled phase correction operation, wherein a result of the X basis measurement acts as a control for the classically-controlled correction phase operation; and executing the adjusted quantum circuit.

Methods and apparatus for optimizing a quantum circuit. In one aspect, a method includes identifying one or more sequences of operations in the quantum circuit that un-compute respective qubits on which the quantum circuit operates; generating an adjusted quantum circuit, comprising, for each identified sequence of operations in the quantum circuit, replacing the sequence of operations with an X basis measurement and a classically-controlled phase correction operation, wherein a result of the X basis measurement acts as a control for the classically-controlled correction phase operation; and executing the adjusted quantum circuit.

A pulse signal generation circuit includes a clock frequency division component, a time delay component and a selection component. The clock frequency division component is configured to perform frequency division on a clock signal to generate a clock frequency division signal; the time delay component is configured to generate a time delay signal based on the clock frequency division signal; and the selection component is configured to receive the clock frequency division signal and the time delay signal at the same time, and select the clock frequency division signal and the time delay signal according to a preset condition to generate a pulse signal.

Provided are a symmetric memory cell and a BNN circuit. The symmetric memory cell includes a first complementary structure and a second complementary structure, the second complementary structure being symmetrically connected to the first complementary structure in a first direction, wherein the first complementary structure includes a first control transistor configured to be connected to the second complementary structure, the second complementary structure includes a second control transistor, a drain electrode of the second control transistor and a drain electrode of the first control transistor being symmetrically arranged in the first direction and connected to a bit line, and the symmetric memory cell is configured to store a weight value 1 or 0.