IPIQ

PHYSICS

G11

INFORMATION STORAGE

G11C

STATIC STORES

16/00

Erasable programmable read-only memories

G11C16/02

electrically programmable

G11C16/04

using variable threshold transistors, e.g. FAMOS

G11C16/0408

comprising cells containing floating gate transistors

G11C16/0441

comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

G11C16/0458

comprising two or more independent floating gates which store independent data