A method for the secured storing of a data element of a predefined data type to be stored by a computer program in an external memory, which is connected to a microcontroller, an error correction value of one error correction value data type being used. The method includes, when creating the computer program: defining a composite data element that includes one element of the data type and one element of the error correction value data type, in the computer program; and when executing the computer program: calculating the error correction value for the data element to be stored; forming an error correction data element as the composite data element, which contains the data element to be stored and the associated error correction value, which has been calculated for the data element; and writing the error correction data element to a memory address for the error correction data element.

A method for the secured storing of a data element of a predefined data type to be stored by a computer program in an external memory, which is connected to a microcontroller, an error correction value of one error correction value data type being used. The method includes, when creating the computer program: defining a composite data element that includes one element of the data type and one element of the error correction value data type, in the computer program; and when executing the computer program: calculating the error correction value for the data element to be stored; forming an error correction data element as the composite data element, which contains the data element to be stored and the associated error correction value, which has been calculated for the data element; and writing the error correction data element to a memory address for the error correction data element.

An apparatus comprises a plurality of memory cells; a plurality of sense circuits, a sense circuit comprising a sense node selectively coupled to a bitline coupled to a first cell of the plurality of memory cells; and a controller to transpose a value indicative of a voltage of the first cell to the sense node; isolate the sense node from the bitline; and calibrate a parameter for the sense circuit based on outputs of the sense circuit for each of a plurality of different applied values of the parameter.

The invention relates to a method, an apparatus and a non-transitory computer-readable storage medium for debugging a solid-state disk (SSD) device. The method is performed by a processing unit of a single-board personal computer (PC) when loading and executing a function of a runtime library, to include: receiving a request to drive a General-Purpose Input/Output (GPIO) interface (I/F), which includes a parameter required for completing a Joint Test Action Group (JTAG) command; issuing a first hardware instruction to the GPIO I/F to set a register corresponding to a GPIO test data input (TDI) pin according to the parameter carried in the request for emulating to issue the JTAG command to a solid-state disk (SSD) device, wherein the single-board PC is coupled to the SSD device through the GPIO I/F; issuing a second hardware instruction to the GPIO I/F to read a value of the register corresponding to the GPIO TDI pin; and replying with a completion message in response to the request.

Provided are memory devices and memory systems. The memory device includes a memory cell array in a first semiconductor layer and including word lines stacked in a first direction, and channel structures passing through the word lines in the first direction; a control logic circuit in a second semiconductor layer located below the first semiconductor layer in the first direction; and a physical unclonable function (PUF) circuit including a plurality of through electrodes passing through the first semiconductor layer and the second semiconductor layer, and configured to generate PUF data according to resistance values of the plurality of through electrodes, and generate the PUF data based on a node voltage between through electrodes connected in series, among the plurality of through electrodes.

A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to one of a plurality of word lines and arranged in strings and configured to retain a threshold voltage corresponding to one of a plurality of memory states. A control circuit is coupled to the plurality of word lines and strings and is configured to erase the memory cells using a stripe erase operation in response to determining a cycle count is less than a predetermined cycle count maximum threshold. The control circuit is also configured to perform a dummy cycle operation in response to determining the cycle count is not less than the predetermined cycle count maximum threshold.

A system includes a volatile storage device, a read-only memory (ROM), a memory built-in self-test (BIST) controller and a central processing unit (CPU). The CPU, upon occurrence of a reset event, executes a first instruction from the ROM to cause the CPU to copy a plurality of instructions from a range of addresses in the ROM to the volatile storage device. The CPU also executes a second instruction from the ROM to change a program counter. The CPU further executes the plurality of instructions from the volatile storage device using the program counter. The CPU, when executing the plurality of instructions from the volatile storage device, causes the ROM to enter a test mode and the memory BIST controller to be configured to test the ROM.

A memory circuit configured to perform multiply-accumulate (MAC) operations for performance of an artificial neural network includes a series of synapse cells arranged in a cross-bar array. Each cell includes a memory transistor connected in series with a memristor. The memory circuit also includes input lines connected to the source terminal of the memory transistor in each cell, output lines connected to an output terminal of the memristor in each cell, and programming lines coupled to a gate terminal of the memory transistor in each cell. The memristor of each cell is configured to store a conductance value representative of a synaptic weight of a synapse connected to a neuron in the artificial neural network, and the memory transistor of each cell is configured to store a threshold voltage representative of a synaptic importance value of the synapse connected to the neuron in the artificial neural network.

Testcase recommendations are generated for a testcase creator application by training a learning function using metadata of previously generated testcases by parsing the metadata into steptasks, and providing the parsed metadata to the learning function to enable the learning function to determine relationships between the steptasks of the previously generated testcases, and using, by the testcase creator application, the trained learning function to obtain a predicted subsequent steptask for a given type of testcase to be generated. Each steptask describes one of the steps of the testcase using a concatenation of a step number of the one of the steps of the testcase, a module and a submodule to be used to perform of the one of the steps of the testcase, and a function to be performed at the one of the steps of the testcase.

A semiconductor device comprises a plurality of memory elements, test control circuitry, and a testing interface. The test control circuitry is configure to determine that one or more clock signals associated with the memory elements have been stopped and generate a scan clock signal based on the determination that the one or more clock signals have been stopped. The test control circuitry is further configured to communicate the scan clock signal to the memory elements. The testing interface is configured to communicate test data from the memory elements. In one example, the test data is delimited with start and end marker elements. The semiconductor device is mounted to a circuit board and is communicatively coupled to communication pins of the circuit board.