A tool for performing a logic built-in self-test of an electronic circuit operating on a clock cycle basis. The tool stores a configurable test signature in a random-access memory together with a pattern counter for a test pattern, wherein a number of the at least one additional signature register corresponds to a number of entries in the random access memory. The tool determines an error based, at least in part, on a compare operation for a given test pattern, wherein the compare operation determines whether the test signature in the first signature register before a capture cycle of a next test pattern differs from the corresponding configurable test signature. The tool stores the error in a corresponding additional signature register.

An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die based on one or more operational parameters. The control die is configured to calibrate the one or more operational parameters for the memory die. The control die is also configured to perform testing of the memory die using the calibrated one or more operational parameters.

A system can respond to detection or prediction of an uncorrectable error (UE) in memory based on fault-aware analysis. The fault-aware analysis enables the system to generate a determination of a specific hardware element of the memory that is faulty. In response to detection of an error, the system can correlate a hardware configuration of the memory device with historical data indicating memory faults for hardware elements of the hardware configuration. Based on a determination of the specific component that likely caused the UE, the system can identify a region of memory associated with the detected UE and mirror the faulty region to a reserved memory space of the memory device for access to data of the faulty region.

Apparatuses and methods for calibrating adjustable impedances of a semiconductor device are disclosed in the present application. An example apparatus includes a register configured to store impedance calibration information and further includes programmable termination resistances having a programmable impedance. The example apparatus further includes an impedance calibration circuit configured to perform a calibration operation to determine calibration parameters for setting the programmable impedance of the programmable termination resistances. The impedance calibration circuit is further configured to program the impedance calibration information in the register related to the calibration operation.

The disclosure provides a method and apparatus of interleaved on-chip testing. The method merges a test setup for analog components with a test setup for digital components and then interleaves the execution of the digital components with the analog components. This provides concurrency via a unified mode of operation. The apparatus includes a system-on-chip test access port (SoC TAP) in communication with a memory test access port (MTAP). A built-in self-test (BIST) controller communicates with the MTAP, a physical layer, and a memory. A multiplexer is in communication with the memory and a phase locked loop (PLL) through an AND gate.

According to one embodiment, an arithmetic device includes a first computational circuit including a first string, the first string having a first magnetoresistive effect element on a first conducting layer; a second computational circuit including a second strings, the second string having second magnetoresistive effect element on a second conducting layer; a third computational circuit executing computational processing using a first signal from the first computational circuit and a second signal from the second computational circuit; and a control circuit. The control circuit sets a condition on write operations with respect to at least one of the first and second magnetoresistive effect elements, based on information related to write error in at least one of the first and second magnetoresistive effect elements.

A control system, that includes a primary controller and various auxiliary controllers, is configured to facilitate a built-in self-test (BIST) of a system-on-chip (SoC). The primary controller is configured to initiate a BIST sequence associated with the SoC. Based on the BIST sequence initiation, each auxiliary controller is configured to schedule execution of various self-test operations on various functional circuits, various memories, and various logic circuits of the SoC by various functional BIST controllers, various memory BIST controllers, and various logic BIST controllers of the SoC, respectively. Based on the execution of the self-test operations, each auxiliary controller further generates various status bits with each status bit indicating whether at least one functional circuit, at least one memory, or at least one logic circuit is faulty. Based on the status bits generated by each auxiliary controller, a fault diagnosis of the SoC is initiated.

A memory device according to one embodiment includes a memory cell array, bit lines, amplifier units, a controller, and a register. The memory cell array includes a memory cell that stores data nonvolatilely. The bit lines are connected to the memory cell array. The sense amplifier units are connected to the bit lines, respectively. The controller performs a write operation. The register stores status information of the write operation. The memory cell array includes a first storage region specified by a first address. The plurality of sense amplifier modules include a buffer region capable of storing data.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.

A processing-in-memory (PIM) device includes a multiplication/accumulation (MAC) operator. The MAC operator includes a multiplying block and an adding block. The multiplying block includes a first multiplier and a second multiplier. The first multiplier performs a first multiplying calculation of first half data of first data and first half data of second data. The second multiplier performs a second multiplying calculation of second half data of the first data and second half data of the second data. The adding block performs an adding calculation of first multiplication result data outputted from the first multiplier and second multiplication result data outputted from the second multiplier. The MAC operator receives a test mode signal having a first level to perform a test operation for the multiplying block.