The invention introduces a method for verifying memory interface, performed by a processing unit, to include: driving a physical layer of a memory interface to pull-high or pull-low a signal voltage on each Input-Output (IO) pin thereof to a preset level according to a setting; obtaining a verification result corresponding to each IO pin from the memory interface; and storing each verification result in a static random access memory (SRAM), thereby enabling a testing host to obtain each verification result of the SRAM through a test interface. The testing host may examine each verification result to know whether any unexpected error has occurred in signals on the IO pins of the memory interface.

An integrated circuit includes a drivability control circuit and a data output circuit. The drivability control circuit is configured to generate a drivability control signal based on data patterns of a plurality of pieces of data. The data output circuit is configured to control drivability, which is reflected to each of the plurality of pieces of data, based on the drivability control signal.

An image processing apparatus including a plurality of transfer units, a data storage, an image processing processor, and a test circuit. A plurality of captured image data are respectively assigned to the plurality of transfer units and the plurality of transfer units transfer the assigned image data. The data storage unit stores the plurality of image data which are transferred by the plurality of transfer units. The image processing processor performs image processing on the plurality of image data which are stored in the data storage unit. The test circuit tests the image processing processor in a period during which the image data are not input from the data storage unit to the image processing processor.

Example embodiments provide for a storage device that includes a storage controller including a plurality of analog circuits and at least one nonvolatile memory device including a first region and a second region. The at least one nonvolatile memory device stores user data in the second region and stores trimming control codes in the first region as a compensation data set. The trimming control codes are configured to compensate for offsets of the plurality of analog circuits and are obtained through a wafer-level test on the storage controller. The storage controller, during a power-up sequence, reads the compensation data set from the first region of the at least one nonvolatile memory device, stores the read compensation data set therein, and adjusts the offsets of the plurality of analog circuits based on the stored compensation data set.

Disclosed is a method for grading memory modules comprising: a testing step which applies at least one test procedure to test a memory, each test procedure is provided with a reliability test; and a grading step which grades the memory into corresponding grade level according to test results of said at least one test procedure, and each test result includes a reliability test result wherein the reliability test has the following steps in sequence: performing a data-writing operation on the memory, wherein the data-writing operation is an operation that writes data to the memory; stopping electric charging the memory; halting a predetermined time period; electric charging the memory; checking data integrity of the memory; and generating the reliability test result according to the data integrity.

The present application relates to the technical field of integrated circuits, and in particular, to a memory test method and a memory test apparatus. The memory test method includes: providing a to-be-tested memory, where the to-be-tested memory includes a plurality of memory cells; alternately writing a first write value and a second write value into a memory cell of the memory cells at a preset frequency; writing a test write value into the memory cell; judging whether a data read from the memory cell is the test write value, and determining that a capacitance-frequency characteristic of the memory cell is abnormal if the data is not the test write value. According to the present application, the capacitance-frequency characteristic of the to-be-tested memory is accurately tested, to improve the field of memory products.

A method for dynamically handling the failure of the static random-access memory (SRAM) dynamic failure handling system using a cyclic redundancy check (CRC) includes obtaining a write data; determining a write address; storing the write data at the write address of a frame memory which is composed of the SRAM and includes a real address area and a spare address area which are distinguished from each other; storing, in response to the write address, a write cyclic redundancy check (CRC) generated by performing a CRC calculation on the write data; determining a read address; reading a read data from the read address of the frame memory; determining whether, based on the A CRC remainder W_CRC corresponding to the read address and the read data, a CRC error occurs, and generating an error flag when the CRC error occurs; determining a fault address based on the error flag; and mapping the fault address to one of non-fault spare addresses of the spare address area when the fault address is an address of the real address area.

The present disclosure relates to a method for generating a pattern of a memory, a computer-readable storage medium and a computer device, the method for generating a pattern of a memory includes: presetting mapping relationships between a physical address and a row, a column and a bank, and determining bits of the physical address corresponding to the row, the column and the bank; taking a preset number of values as setting data, the preset number being the same as a number of signal address lines in the memory; obtaining a command truth value table, which is used to define relationships between bits of the physical address and commands; determining values of the row, the column and the bank based on the command truth value table and the setting data; generating the pattern based on the values of the row, the column and the bank and the mapping relationships.

An apparatus including a test validation circuit and associated systems and methods are disclosed herein. The apparatus may include a self-test circuit configured to implement at least a portion of a self-test process that determines operating conditions of the apparatus. The test validation circuit may be configured to generate a flag based on comparing (1) an input stream or a portion thereof associated with the self-test to (2) test data associated with the self-test. The flag may represent a validity associated with the implementation of the self-test process or the portion thereof.

A digital system includes a non-volatile calculating register having a set of latches configured to perform a calculation. A set of non-volatile storage cells is coupled to the set of latches. Access detection logic is coupled to the calculating register and is operable to initiate a calculation of a next value by the calculating register each time the calculating register is accessed by an accessing module. The access detection logic is operable to cause the next value to be stored in the set of non-volatile storage cells at the completion of the calculation as an atomic transaction. After a power loss or other restore event, the contents of the calculating register may be restored from the non-volatile storage cells.