An apparatus includes a selection data generation circuit configured to generate selection data from fuse data or generate the selection data having a preset test input pattern, depending on whether a failure test is entered; and a failure flag generation circuit configured to generate latch data by latching the selection data, and generate a failure flag by detecting whether the latch data has a preset test pattern.

A test method for a memory device including a plurality of memory cells includes generating a first test pattern, performing a first pattern write operation of writing the first test pattern in the plurality of memory cells, reading first data from the plurality of memory cells in which the first test pattern was written, generating a second test pattern based on the first data, and performing a second pattern write operation of writing the second test pattern in the plurality of memory cells. The second test pattern is generated such that a write operation is skipped with regard to failure cells from among the plurality of memory cells at which a write failure occurs, during the second pattern write operation.

A memory device includes a data storage circuit configured to store, when a write operation is performed, a first internal write data and a second internal write data in a memory cell array which is accessed by an internal address, and output, when a read operation is performed, data stored in a memory cell array which is accessed by the internal address, as internal read data; and a flag generation circuit configured to generate a flag for controlling generation of a data strobe signal, based on the internal read data.

A processing system includes an error detection circuit configured to receive data bits and ECC bits, calculate further ECC bits as a function of the data bits, and generate a syndrome by comparing the calculated ECC bits with the received ECC bits. When the syndrome corresponds to one of N+K single bit-flip reference syndromes, the error detection circuit asserts a first error signal, and asserts one bit of a bit-flip signature corresponding to a single bit-flip error indicated by the respective single bit-flip reference syndrome.

A semiconductor device is provided, which contains a memory bank including M primary word lines and R replacement word lines, a row/column decoder, and an array of redundancy fuse elements. A sorted primary failed bit count list is generated in a descending order for the bit fail counts per word line. A sorted replacement failed bit count list is generated in an ascending order of the M primary word lines in an ascending order. The primary word lines are replaced with the replacement word lines from top to bottom on the lists until a primary failed bit count equals a replacement failed bit count or until all of the replacement word lines are used up. Optionally, the sorted primary failed bit count list may be re-sorted in an ascending or descending order of the word line address prior to the replacement process.

A semiconductor integrated circuit includes a write test circuit and a read test circuit. The write test circuit generates test data and transmits the generated test data to an external memory device without storing the test data in a local memory device. The read test circuit receives from the external memory device, read data that the external memory device has obtained by reading the test data, and compares the received read data with an expected value without storing either the read data or the expected value in the local memory device.

An apparatus with a memory array having a plurality of memory cells. The apparatus also including a memory built-in self-test circuit to test the memory array. The memory built-in self-test circuit includes one or more processing devices to write a data pattern to one or more memory cells to be tested in the memory array, pause for a time period corresponding to a predetermined pause time setting, and read the written data pattern from the one or more memory cells after the time period has elapsed. The predetermined pause time setting is automatically adjusted based on memory device conditions, which can include the temperature of the apparatus.

The present disclosure relates to a method for generating a pattern of a memory, a computer-readable storage medium and a computer device, the method for generating a pattern of a memory includes: presetting mapping relationships between a physical address and a row, a column and a bank, and determining bits of the physical address corresponding to the row, the column and the bank; taking a preset number of values as setting data, the preset number being the same as a number of signal address lines in the memory; obtaining a command truth value table, which is used to define relationships between bits of the physical address and commands; determining values of the row, the column and the bank based on the command truth value table and the setting data; generating the pattern based on the values of the row, the column and the bank and the mapping relationships.

Process for determining defects in cells of a circuit is provided. A layout of a circuit is received. The layout comprises a first cell and a second cell separated by a boundary circuit. Bridge pairs for the first cell and the second cell is determined. The bridge pairs comprises a first plurality of boundary nodes of the first cell paired with a second plurality of boundary nodes of the second cell. Bridge pair faults between the bridge pairs are modeled. A test pattern for the bridge pair faults is generated.

An integrated circuit (IC) protection circuit for an IC includes a controller with a barrier finite state machine (FSM) having a key sequence input that unlocks the controller; and a signal scrambler coupled to receive at least two initialization inputs and a primary input path and output a signal to the IC, wherein at least one initialization input of the at least two initialization inputs is based on an output of the barrier FSM. The IC protection circuit can further include a dynamic authentication circuit coupled to receive the output of the barrier finite state machine and output a signal to the signal scrambler for one of the at least two initialization inputs. The dynamic authentication circuit can be formed of a dynamic sequence generator and a dynamic sequence authenticator, each formed of one or more reconfigurable linear feedback shift registers, and a comparator.