An optical apparatus includes a stage configured to support a semiconductor device, a solid immersion lens configured to be brought into contact with the semiconductor device supported by the stage, and a photodetector disposed at a position opposite to the stage with respect to the solid immersion lens on an optical path passing through the solid immersion lens. The solid immersion lens includes a base part having a first surface to be brought into contact with the semiconductor device and a second surface opposite to the first surface, and a meta-lens disposed on the second surface.

Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

An apparatus, and method of operating the same, detects changes in biomass accumulating on a surface of a substrate while minimizing bulk effect. The apparatus includes a sensor substrate and two illumination sources. A first illumination source generates a first light having a first central wavelength. A second illumination source generates a second light having a second central wavelength different than the first wavelength. The first and second light are mixed to produce a combined light. An analyte solution is introduced to the sensor substrate. Incident light of the combined light is reflected from the sensor substrate to produce a signal. The signal is imaged with a camera to obtain a reflectance. Reflectance produced by the combined light is not affected by variations in the dielectric properties of the analyte solution. A biomass accumulated on the substrate is computed based on the reflectance.

An apparatus, and method of operating the same, detects changes in biomass accumulating on a surface of a substrate while minimizing bulk effect. The apparatus includes a sensor substrate and two illumination sources. A first illumination source generates a first light having a first central wavelength. A second illumination source generates a second light having a second central wavelength different than the first wavelength. The first and second light are mixed to produce a combined light. An analyte solution is introduced to the sensor substrate. Incident light of the combined light is reflected from the sensor substrate to produce a signal. The signal is imaged with a camera to obtain a reflectance. Reflectance produced by the combined light is not affected by variations in the dielectric properties of the analyte solution. A biomass accumulated on the substrate is computed based on the reflectance.

A calibration method includes: acquiring eight error models obtained after a preliminary calibration of a Terahertz frequency band system; based on the eight error models, determining a first mathematical model according to a first S parameter related to a first calibration piece, the first mathematical model comprising parallel crosstalk terms between probes, and determining a second mathematical model according to a second S parameter related to a second calibration piece, the second mathematical model comprising series crosstalk terms between the probes; determining a third mathematical model according to a third S parameter related to a measured piece; and solving and obtaining a Z parameter of the measured piece based on the first mathematical model, the second mathematical model and the third mathematical model, and acquiring an S parameter of the measured piece according to the Z parameter of the measured piece.

Various embodiments of systems and methods for calibrating wafer inspection system modules are disclosed herein. More specifically, the present disclosure provides various embodiments of systems and methods to calibrate the multiple spectral band values obtained from a substrate by a camera system included within a WIS module. In one embodiment, multiple spectral band values are red, green, and blue (RGB) values. As described in more detail below, the calibration methods disclosed herein may use a test wafer having a predetermined pattern of thickness changes or color changes to generate multiple spectral band offset values. The multiple spectral band offset values can be applied to the multiple spectral band values obtained from the substrate to generate calibrated RGB values, which compensate for spectral responsivity differences between camera systems included within a plurality of WIS modules.

A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.

There is provided a method for producing a nitride semiconductor laminate in which a thin film is homoepitaxially grown on a substrate comprising group III nitride semiconductor crystals, the method including: homoepitaxially growing a thin film on a substrate, using the substrate in which a dislocation density on its main surface is 510.sup.6 pieces/cm.sup.2 or less, a concentration of oxygen therein is less than 110.sup.17 at.Math.cm.sup.3, and a concentration of impurities therein other than n-type impurity is less than 110.sup.17 at.Math.cm.sup.3; and inspecting a film quality of the thin film formed on the substrate, wherein in the inspection of the film quality, the film quality of the thin film is inspected by detecting a deviation of an amount of reflected light at a predetermined wavenumber determined in a range of 1,600 cm.sup.1 or more and 1,700 cm.sup.1 or less in a reflection spectrum obtained by irradiating the thin film on the substrate with infrared light, from an amount of reflected. light at the predetermined wavenumber determined according to a film thickness of the thin film, a carder concentration of the substrate, and a carrier concentration of the thin film.

Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral imaging system include fiber optical elements to direct illumination light from the illumination source to the measurement area on the surface of the specimen under measurement and fiber optical elements to image the measurement area. In another aspect, a fiber optics collector includes an image pixel mapper that couples a two dimensional array of collection fiber optical elements into a one dimensional array of pixels at the spectrometer and the hyperspectral detector.