A temperature adjusting device including a main body and a pressing component is provided. The main body includes a first main body thru-hole and a second main body thru-hole. The main body has a first fluid channel and a second fluid channel therein, the first fluid channel is in spatial communication with the first main body thru-hole, and the second fluid channel is in spatial communication with the second main body thru-hole. The pressing component partially protrudes from one side of the main body, the pressing component has a fluid accommodating slot therein that is in spatial communication with the first fluid channel and the second fluid channel. A fluid having a predetermined temperature can enter into the main body from the first main body thru-hole, enter into the fluid accommodating slot through the first fluid channel, and exit the main body through the second main body thru-hole.

A device for simulating thermal loads includes a platform and a plurality of nodes supported by the platform. At least one node is a movable node connected to the platform by a movable stage to move the movable node relative to the platform.

A burn-in board for testing the operational integrity of memory devices includes local heating elements for each memory device under test. Each socket on the burn-in board may include a pair of opposed latch heads which move between open positions allowing a memory device to be mounted in the socket, and closed positions where the latch heads rest against the memory device to secure the device in the socket. Local heating elements may be integrated into the latch heads to ensure even heating of each memory device in the burn-in board.

Examples of techniques for burn-in testing of an individually personalized device configuration are disclosed. In one example implementation according to aspects of the present disclosure, a computer-implemented method may include: retrieving the individually personalized device configuration; enabling a device to receive the individually personalized device configuration, wherein the device is one of a plurality of devices; and loading the individually personalized device configuration to the device that is enabled, wherein other devices of the plurality of devices are disabled from receiving the individually personalized device configuration.

A probe card having uniform temperature distribution under control to a desired temperature is provided, so as to provide an inspection apparatus and an inspection method. The probe card includes a supporting substrate, a wiring layer arranged including a wiring on a main surface of the supporting substrate, a probe arranged on a surface serving as an opposite side to a side of the supporting substrate of the wiring layer so as to be connected to the wiring, and a plurality of heaters. Further, the probe card is virtually divided into heater regions according to a plurality of heater regions arrayed in vertical and horizontal directions in plan view, and at least one of a plurality of heaters is arranged in each of the plurality of heater regions. An inspection apparatus is configured including the probe card, and an object to be inspected is inspected by use of the inspection apparatus.

A test handler includes a pusher which includes a pusher end which comes into contact with a DUT (Device Under Test) to transfer heat, and a pusher body which conducts heat to the pusher end, the pusher end separating a test tray for fixing the DUT and the pusher body from each other; a porous match plate including a pusher arrangement region in which the pusher body is placed, and a plurality of holes placed adjacent to the pusher arrangement region; a heater placed on an upper surface of the porous match plate to control temperature of the pusher; and an airflow input port placed on the heater to provide the airflow to the plurality of holes, in which the airflow passes through the plurality of holes and passes through a separated space between the test tray and the pusher body.

A support assembly for a semiconductor processing chamber is provided and includes a body comprising a heater, and a puck coupled to the body, the puck comprising a chucking electrode embedded in a dielectric material, wherein, when a radio frequency power of about 13.56 megahertz is applied to a substrate receiving surface of the body, an electrical resistance (R) of the body is about 0.460 Ohms, or less, and an electrical reactance (X) of the body is about 10.9 Ohms, or greater.

A system for testing circuits of an integrated circuit semiconductor wafer includes a tester system for generating signals for input to the circuits and for processing output signals from the circuits for testing the wafer and a test stack coupled to the tester system. The test stack includes a wafer probe for contacting a first surface of the wafer and for probing individual circuits of the circuits of the wafer, a wafer thermal interposer (TI) layer operable to contact a second surface of the wafer and operable to selectively heat areas of the wafer, and a cold plate disposed under the wafer TI layer and operable to cool the wafer. The system further includes a thermal controller for selectively heating and maintaining temperatures of the areas of the wafer by controlling cooling of the cold plate and by controlling selective heating of the wafer TI layer.

A method for screening a semiconductor device for production of excessive random telegraph sequence (RTS) noise includes measuring noise of the semiconductor device at a first temperature, changing the temperature of the semiconductor device to a second temperature different from the first temperature, measuring noise of the semiconductor device at the second temperature, extracting a characteristic of the measured noise at the first and second temperatures (e.g., standard deviation, HMM output, frequency domain spectrum of time domain noise measurement), making a comparison of the extracted first and second noise characteristics, and making a determination whether the semiconductor device produces excessive RTS noise based on whether the comparison is above a predetermined threshold. Two different bias conditions of the device may be employed rather than, or in addition to, the two different temperatures.

A semiconductor component burn-in test module includes a burn-in board and an external power transmission component. The burn-in board includes a plurality of burn-in seats, wherein a plurality of chips are disposed on the burn-in seats. The external power transmission component is arranged at opposite two sides of the burn-in board, where the external power transmission component includes a plurality of conductive members and a plurality of terminal seats. The burn-in board is provided with a plurality of wirings corresponding to the external power transmission component. As such, electric power can be conveyed to the plural burn-in seats of the burn-in board, through the plural terminal seats and the plural conductive strips. This decreases the length and the number of copper foil wirings in the burn-in boards for power transmission, so as to lower the cost of the burn-in boards. Also disclosed is a semiconductor component burn-in test equipment using at least one semiconductor component burn-in test module.