A method for controlling temperature in a temperature control system. The method includes providing a temperature control system including a controller, a first contactor assembly having a first channel system, a plurality of first contacts, each of the first contacts including a portion that is disposed within the first channel system, and one or more of a first exhaust valve or a first inlet valve, and a second contactor assembly having a second channel system, a plurality of second contacts, each of the second contacts including a portion that is disposed within the second channel system, and one or more of a second exhaust valve or a second inlet valve. The method also includes receiving, by the first contactor assembly, a fluid at a first temperature. The method also includes receiving, by the second contactor assembly, the fluid at the first temperature.

One example includes a cryogenic wafer test system. The system includes a first chamber that is cooled to a cryogenic temperature and a wafer chuck confined within the first chamber. The wafer chuck can be configured to accommodate a wafer device-under-test (DUT) comprising a plurality of superconducting die. The system also includes a second chamber that is held at a non-cryogenic temperature and which comprises a wafer chuck actuator system configured to provide at least one of translational and rotational motion of the wafer chuck via mechanical linkage interconnecting the wafer chuck and the wafer chuck actuator system. The system further includes a radiation barrier arranged between the first chamber and the second chamber and through which the mechanical linkage extends, the radiation barrier being configured to provide a thermal gradient between the cryogenic temperature of the first chamber and the non-cryogenic temperature of the second chamber.

One example includes a cryogenic wafer test system. The system includes a first chamber that is cooled to a cryogenic temperature and a wafer chuck confined within the first chamber. The wafer chuck can be configured to accommodate a wafer device-under-test (DUT) comprising a plurality of superconducting die. The system also includes at least one wafer prober configured to implement a test on a superconducting die of the plurality of superconducting die via a plurality of electrical probe contacts. The system further includes a wafer chuck actuator system confined within a second chamber. The wafer chuck actuator system can be configured to provide at least one of translational and rotational motion of the wafer chuck to facilitate alignment and contact of a plurality of electrical contacts of the superconducting die to the respective plurality of electrical probe contacts of the at least one wafer prober.

A system for testing a semiconductor may include a transfer chamber, at least one loadlock chamber and at least one test chamber. The transfer chamber may include a plurality of sidewalls. The loadlock chamber may be arranged on a first sidewall of the sidewalls of the transfer chamber. The loadlock chamber may include a carrier configured to receive a plurality of wafers. The test chamber may be arranged on a second sidewall of the sidewalls of the transfer chamber. When the transfer chamber is connected to the loadlock chamber, a pressure of the transfer chamber may be changed into a pressure of the loadlock chamber. When the transfer chamber is connected to the test chamber, the pressure of the transfer chamber may be changed into a pressure of the test chamber.

An air blow guide member 100 for cooling an electrical component accommodated in an electrical component socket 10 is configured to guide flowing air K supplied from a ventilation unit 3 toward the electrical component socket 10. Further, a test device unit 2 including the air blow guide member 100 and the electrical component socket 10 is configured so that the flowing air K supplied from the air ventilation unit 3 is guided toward the electrical component socket 10 by the air blow guide member 100. Further, a test device includes a plurality of the test units 2 arranged from an upstream side toward a downstream side of the flowing air K supplied from the ventilation unit 3.

An apparatus for testing integrated circuits (ICs) , includes a first thermal contact structure having a first surface to interface with a heat source and an opposing second surface to interface with a device under test (DUT). A second thermal contact structure is above the first thermal contact structure and separated therefrom by a variable-resistance thermal interface (VRTI) structure operable to couple or decouple the first and second thermal contact structures from one another. The VRTI structure has a maximal thermal conductivity associated with a first state, and a minimal thermal conductivity associated with a second state.

Methods and apparatus of forming a thermal interface with condensate are described. In an example, a device may be disposed in a test environment or a test apparatus. An amount of condensate may be accumulated on a heat sink to coat the heat sink with a layer of condensate. The coated heat sink may be disposed on the device, where the layer of condensate is directed towards the device, and the disposal of the coated heat sink causes the layer of condensate to spread among voids between the heat sink and the device to form a thermal interface that includes the condensate. A test may be executed on the device with the thermal interface comprising the condensate between the coated heat sink and the device.

Techniques are described herein that are capable of progressively thermally drying a quantum circuit. An inert gas is progressively heated by a heater element to provide a heated inert gas. Heated ambient air and the heated inert gas combine in a heating channel, causing a combination of the heated ambient air and the heated inert gas to flow into a probe compartment to progressively thermally dry a quantum circuit therein. A flow rate of the inert gas is controlled to cause the combination to have a relative humidity less than or equal to a threshold. A temperature of the heater element may be controlled to be approximately equal to a progressively increasing target temperature within a tolerance of 3.0° C. Heating of the inert gas may be initiated based on detection of the inert gas, and the flow and heating of the inert gas may be automatically discontinued.

Disposing a DUT between a cold plate and an active thermal interposer device of the thermal management head. The DUT includes a plurality of modules and the active thermal interposer device includes a plurality of zones, each zone of the plurality of zones corresponding to a respective module of the plurality of modules and operable to be selectively heated. Receiving a respective set of inputs corresponding to each zone of the plurality of zones. Performing thermal management of the plurality of modules of the DUT by separately controlling temperature of each zone of the plurality of zones by controlling a supply of coolant to a cold plate, and individually controlling heating of each zone of the plurality of zones.

A test socket for an IC chip includes a retainer positioned adjacent a load board, the retainer defining a plurality of apertures corresponding to contact pads on the load board; a plurality of contacts disposed in the plurality of apertures, the plurality of contacts configured to electrically couple the IC chip to the contact pads; a housing defining a chamber in fluid communication with an inlet, a liquid outlet, and a vapor outlet. The housing includes a body structure defining a plurality of cavities corresponding to the plurality of apertures and configured to receive the plurality of contacts therein, and a guide structure configured to receive the IC chip and position the IC chip in the chamber when engaged with the plurality of contacts. The chamber receives a two phase fluid coolant via the inlet to at least partially submerges the plurality of contacts in the two phase fluid coolant.