An electrostatic protection circuit may include a test pad configured to receive a first signal in a test mode. The electrostatic protection circuit may include a bump array configured to receive a second signal in a normal mode. The electrostatic protection circuit may include a buffer array configured to transmit the first signal or the second signal into a semiconductor device. The electrostatic protection circuit may include an electrostatic protection unit coupled with the test pad and the bump array, and configured to block static electricity included in the first signal and the second signal.

This disclosure describes a test architecture that supports a common approach to testing individual die and dies in a 3D stack arrangement. The test architecture uses an improved TAP design to facilitate the testing of parallel test circuits within the die.

Described herein are integrated circuit chips having test circuitry designed such that independently selectable testing of different power domains using a same scan chain compressor-decompressor circuit may be performed. Also disclosed herein are integrated circuit chips having test circuitry designed such that independently selectable testing of different power domains using multiple different scan chain compressor-decompressor circuits may be performed.

A device comprises a first die; and a second die stacked below the first die with interconnections between the first die and the second die. A least one of the first die or the second die has a circuit for performing a function and provides a functional path. Each of the first and second dies comprise a plurality of latches, including a respective latch corresponding to each one of the interconnections; and a plurality of multiplexers. Each multiplexer is connected to a respective one of the plurality of latches and arranged for receiving and selecting one of a scan test pattern or a signal from the functional path for outputting during a scan chain test of the first die and second die.

A test circuit for testing a semiconductor device including semiconductor chips, includes: a test input terminal configured to receive data for testing the semiconductor device; signal paths provided between one semiconductor chip in the semiconductor chips and another semiconductor chip in the semiconductor chips, data supplied to the test input terminal being transmitted through the signal paths; a select signal generator, provided in the one semiconductor chip and coupled to the another semiconductor chip via the signal paths, configured to generate, when receiving data indicating expected values via one or more signal paths in the signal paths, a select signal indicating the one or more signal paths; and a path selector, provided in the at least one semiconductor chip and coupled to the signal paths, configured to select, based on the select signal, signal paths to be used at the time of testing the semiconductor device.

This disclosure describes a test architecture that supports a common approach to testing individual die and dies in a 3D stack arrangement. The test architecture uses an improved TAP design to facilitate the testing of parallel test circuits within the die.

A semiconductor integrated circuit device (1000) includes: a first semiconductor chip CHP1 having a first circuit; and a second semiconductor chip (CHP2) having a second circuit and differing from the first semiconductor chip (CHP1). The semiconductor integrated circuit device (1000) further includes a control circuit (BTCNT) for controlling an operation of the first circuit and an operation of the second circuit in accordance with a control signal in a burn-in test, and the control circuit (BTCNT) controls the first circuit and the second circuit such that an amount of stress applied to the first semiconductor chip (CHP1) due to an operation of the first circuit and an amount of stress applied to the second semiconductor chip (CHP2) due to an operation of the second circuit differ from each other in the burn-in test.

A test circuit, provided to a semiconductor device including a plurality of semiconductor chips, includes: a test clock terminal provided to a first chip; a plurality of clock paths disposed between the first chip and a second chip through which the test clock is transmitted from the first chip to the second chip; a test unit provided to the second chip for testing the second chip by using the test clock transmitted to the second chip; a clock detection unit provided to the second chip, and detects the test clock that is received through each of the plurality of clock paths; and a clock path selection unit which is provided to the second chip, selects a first clock path among the plurality of clock paths as a test clock path, and supplies the test clock transmitted through the test clock path to the test unit.

Disclosed herein is a test circuit for a 3D semiconductor device for detecting soft errors and a method for testing thereof. The test circuit includes a first Multiple Input Signature Register (MISR) disposed in a first semiconductor chip, the first MISR compressing a first test result signal corresponding to a test pattern, a second MISR disposed in a second semiconductor chip stacked on or under the first semiconductor chip, the second MISR compressing a second test result signal corresponding to the test pattern, and a first error detector to detect a soft error by comparing a first output signal output from the first MISR with a second output signal output from the second MISR.

Embodiments of the disclosure are drawn to apparatuses and methods for testing through silicon vias (TSVs) which may be used, for example, to couple layers of a semiconductor memory device. The TSVs and/or the die around the TSVs may require testing. A switch circuit may be used to selectively couple one or more test circuits to an amplifier. The test circuits may generate a voltage that is related to one or more parameters of the TSV being tested. The amplifier may amplify the voltage, which may be used to determine if the TSV passes the particular test determined by the test circuit selected by the switch circuit. The switch circuit and/or other components of the test circuits may be controlled by control signals to determine the operation of a particular test.