Disclosed are a spatial light modulator and a display device, where 2*2 adjacent pixel electrodes are a pixel group, through-holes corresponding to the respective pixel electrodes are located proximate to the center of the pixel group, and a photo spacer is located at the center of the pixel group, so that the photo spacer can overlap with the through-holes, or the photo spacer can be arranged in close proximity to the through-holes. If the photo spacer overlaps with the through-holes, then a black matrix layer covering the photo spacer, and a black matrix layer covering the surrounding of the photo spacer may cover at least a part of the through-holes; and if the photo spacer is arranged in close proximity to the through-holes, then the black matrix layer covering the surrounding of the photo spacer may cover at least a part of the through-holes.

A display device including a substrate, a gate line, a data line, a plurality of thin film transistors, a first pixel electrode, and a second pixel electrode. The gate line is disposed on the substrate. The data line is disposed on the substrate. The data line includes a first branch line and a second branch line. The first branch line and the second branch line form a closed loop. The plurality of thin film transistors is connected to the data line. The first pixel electrode is connected to at least one of the plurality of thin film transistors. The second pixel electrode is connected to at least another one of the plurality of thin film transisters. The first pixel electrode and the second pixel electrode are arranged in a substantially diagonal direction with respect to each another. The first branch line is connected to a source electrode of said at least one of the plurality of thin film transistors. The second branch line is connected to a source electrode of said at least another one of the plurality of thin film transistors.

A display device including a substrate, a gate line, a data line, a plurality of thin film transistors, a first pixel electrode, and a second pixel electrode. The gate line is disposed on the substrate. The data line is disposed on the substrate. The data line includes a first branch line and a second branch line. The first branch line and the second branch line form a closed loop. The plurality of thin film transistors is connected to the data line. The first pixel electrode is connected to at least one of the plurality of thin film transistors. The second pixel electrode is connected to at least another one of the plurality of thin film transisters. The first pixel electrode and the second pixel electrode are arranged in a substantially diagonal direction with respect to each another. The first branch line is connected to a source electrode of said at least one of the plurality of thin film transistors. The second branch line is connected to a source electrode of said at least another one of the plurality of thin film transistors.

Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS): correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS): correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

A technique is provided that reduces dullness of a potential provided to a line such as gate line on an active-matrix substrate to enable driving the line at high speed and, at the same time, reduces the size of the picture frame region. On an active-matrix substrate (20a) are provided gate lines (13G) and source lines. On the active-matrix substrate (20a) are further provided: gate drivers (11) each including a plurality of switching elements, at least one of which is located in a pixel region, for supplying a scan signal to a gate line (13G); and lines (15L1) each for supplying a control signal to the associated gate driver (11). A control signal is supplied by a display control circuit (4) located outside the display region to the gate drivers (11) via the lines (15L1). In response to a control signal supplied, each gate driver (11) drives the gate line (13G) to which it is connected.

A technique is provided that reduces dullness of a potential provided to a line such as gate line on an active-matrix substrate to enable driving the line at high speed and, at the same time, reduces the size of the picture frame region. On an active-matrix substrate (20a) are provided gate lines (13G) and source lines. On the active-matrix substrate (20a) are further provided: gate drivers (11) each including a plurality of switching elements, at least one of which is located in a pixel region, for supplying a scan signal to a gate line (13G); and lines (15L1) each for supplying a control signal to the associated gate driver (11). A control signal is supplied by a display control circuit (4) located outside the display region to the gate drivers (11) via the lines (15L1). In response to a control signal supplied, each gate driver (11) drives the gate line (13G) to which it is connected.