Methods, systems, and devices for back-bias optimization are described. An apparatus, such as an electronic apparatus, may include a first substrate region and a second substrate region. The apparatus may also include a voltage generator that is disposed on the first substrate region and that includes an output terminal coupled with a conductive path. The apparatus may also include a set of clamp circuits disposed on the second substrate region. The set of clamp circuits may be configured selectively couple the conductive path with a voltage supply.

An apparatus comprises a radio frequency (RF) transceiver circuit; a phase modulator that comprises digital-to-time converter (DTC) circuitry configured to convert a digital value to a specified signal phase of a signal transmitted by the RF transceiver circuit; low drop out regulator (LDO) circuitry operatively coupled to the DTC circuitry, wherein a bias current of the LDO circuitry is adjustable; and logic circuitry operatively coupled to the LDO circuitry and DTC circuitry, wherein the logic circuitry is configured to set the adjustable bias current of the LDO circuitry according to a digital value input to the DTC circuitry.

Various implementations described herein are related to a device having header circuitry with first transistors that are configured to receive a supply voltage and provide a dynamically biased voltage. The device may include reference generation circuitry having multiple amplifiers that are configured to receive the supply voltage and provide reference voltages based on the supply voltage. The device may include bias generation circuitry having second transistors configured to track changes in the dynamically biased voltage and adjust the dynamically biased voltage by generating bias voltages based on the reference voltages and by applying the bias voltages to the header circuitry so as to adjust the dynamically biased voltage.

In various embodiments, a measuring arrangement is provided. The measuring arrangement may include a micromechanical sensor including a capacitor, a bridge circuit including a plurality of capacitors, at least one capacitor of which is the capacitor of the micromechanical sensor, an amplifier coupled, on the input side, to an output of the bridge circuit, a DC voltage source configured to provide an electrical DC voltage, a chopper including at least one first charge store and a switch structure, The switch structure is configured to couple the first charge store alternately to the DC voltage and the bridge circuit for the purpose of coupling an electrical mixed voltage into the bridge circuit.

A circuit includes: a cascode current source comprising: a current mirror transistor; and a cascode transistor; and a bias circuit coupled to the cascode current source, the bias circuit comprising: a current source; a first transistor coupled in series to the current source to form a first current path through the current source and the first transistor; a second transistor coupled in series to the current source; and a third transistor coupled in series to the second transistor and the current source to form a second current path through the current source and the second and third transistors, wherein the third transistor has a channel size greater than a channel size of the second transistor by a multiple determined according to a design factor of the bias circuit.

A switch bias control circuit includes a level shifter and voltage regulator circuitry configured to receive a voltage reference signal, provide a first voltage output at a first node and provide a second voltage output at a second node, the first node and the second node being at least partially isolated from one another. coupling circuitry couples the first node to the level shifter and couples the second node to a negative voltage generator.

One or more embodiments relate to a multi-bias mode current conveyor. Such a current conveyor may include an input terminal, a reference terminal, an output terminal, a first and second cascoded current mirrors, and a biasing circuit. The first cascoded current mirror and a second cascoded current mirror may be arranged as a current conveyor that is configured to provide an output current that a mirror of an input current. The biasing circuit may be configured to provide a bias voltage selectively exhibiting a first voltage level or a second voltage level. The bias voltage may be provided at least partially responsive to a state of the input current. The biasing circuit may be arranged to apply the bias voltage to at least one of the first cascoded current mirror or the second cascoded current mirror.

In an embodiment, a circuit provided by the present invention includes a transistor connected to allow current to flow from a voltage supply to an output port. The circuit further includes a resistance ladder digital-to-analog converter (R.sub.DAC) configured to receive a digital input that indicates a voltage scaling factor. The R.sub.DAC is further configured to receive an input voltage (V.sub.B) at a voltage input port and produce an output voltage (V.sub.A). The circuit further includes an amplifier having an output port connected to a gate of the first transistor, an inverting input port receiving the output voltage (V.sub.A), and a non-inverting input connected to the output port of the first transistor.

One example includes an reference voltage generator system. The system includes an amplifier configured to generate a reference voltage based on a respective input voltage provided at each of at least one input of the amplifier. The system also includes at least one input transistor that is coupled to the at least one input of the amplifier and is statically-biased to conduct a current to set an amplitude of the respective input voltage provided at each of the at least one input of the amplifier. Each of the at least one input transistor includes an input terminal that is coupled in series with an input resistor.

A driver circuit drives a high voltage I/O interface using stacked low voltage devices in the pull-up and pull-down portions of the driver. The transistor closest to the PAD in the pull-up portion receives a dynamically adjusted gate bias voltage adjusted based on the value of the data supplied to the output circuit and the transistor in the pull-down portion closest to the PAD receives the same dynamically adjusted gate bias voltage. The transistors closest to the power supply nodes receive gate voltages that are level shifted from the core voltage levels of the data supplied to the output circuit. The transistors in the middle of the pull-up and pull-down transistor stacks receive respective static gate voltages. The bias voltages are selected such that the gate-drain, source-drain, and gate-source voltages of the transistors in the output circuit do not exceed the voltage tolerance levels of the low voltage devices.