A circuit for converting a first voltage to a second voltage in a communication system is disclosed. The circuit includes a pass transistor including a first terminal, a second terminal and a gate, wherein the first terminal is coupled with the first voltage. The circuit is also includes an error amplifier. The error amplifier includes a first input that is coupled with a constant reference voltage and a second input that is coupled with a first switch that is coupled with an output port. A second switch is included and is coupled between the first voltage and an output of the error amplifier. The output of the error amplifier is coupled with the gate of the pass transistor. A third switch is included and is coupled between ground and the output of the error amplifier. The second switch is configured to be driven by a first one shot pulse generated from an input signal of the communication system and the third switch is configured to be driven by a second one shot pulse generated from the input signal.

A circuit for converting a first voltage to a second voltage in a communication system is disclosed. The circuit includes a pass transistor including a first terminal, a second terminal and a gate, wherein the first terminal is coupled with the first voltage. The circuit is also includes an error amplifier. The error amplifier includes a first input that is coupled with a constant reference voltage and a second input that is coupled with a first switch that is coupled with an output port. A second switch is included and is coupled between the first voltage and an output of the error amplifier. The output of the error amplifier is coupled with the gate of the pass transistor. A third switch is included and is coupled between ground and the output of the error amplifier. The second switch is configured to be driven by a first one shot pulse generated from an input signal of the communication system and the third switch is configured to be driven by a second one shot pulse generated from the input signal.

The device includes at least the following components: a heating resistor intended for heating a component to be regenerated; a current source; a thermistor connected to the current source and thermally coupled to the heating resistor, the thermistor, through which the current flows, having a voltage Vtemp across its terminals, which voltage reflects the temperature of the heating resistor; an error amplifier, which amplifies the difference between the voltage Vset and the voltage Vtemp and delivers a voltage Vctrl that corresponds to the amplified difference; a switch, which switches the current flowing through the heating resistor; an oscillator, which delivers a voltage Vosc formed with a modulated duty cycle, the duty cycle of the pulses of the voltage Vosc being dependent on the voltage Vctrl, the pulses controlling the opening of the switch.

The device includes at least the following components: a heating resistor intended for heating a component to be regenerated; a current source; a thermistor connected to the current source and thermally coupled to the heating resistor, the thermistor, through which the current flows, having a voltage Vtemp across its terminals, which voltage reflects the temperature of the heating resistor; an error amplifier, which amplifies the difference between the voltage Vset and the voltage Vtemp and delivers a voltage Vctrl that corresponds to the amplified difference; a switch, which switches the current flowing through the heating resistor; an oscillator, which delivers a voltage Vosc formed with a modulated duty cycle, the duty cycle of the pulses of the voltage Vosc being dependent on the voltage Vctrl, the pulses controlling the opening of the switch.

A power down detection circuit and a semiconductor storage apparatus, which can adjust a power down detection level while suppressing temperature dependence, are provided. The power down detection circuit includes a BGR circuit, a trimming circuit, a resistance division circuit, and a comparator. The BGR circuit generates a reference voltage based on a supply voltage. The trimming circuit adjusts the reference voltage based on a trimming signal to generate a reference voltage for power down detection. The resistance division circuit generates an internal voltage lower than the supply voltage. The comparator detects that the internal voltage is lower than the reference voltage for power down detection and outputs a reset signal.

A device for providing a bandgap voltage reference. The device comprises a first switching circuit for providing a first temperature voltage which behaves proportionally to a present temperature, wherein the first switching circuit has two parallel current paths, first and second diode elements being respectively arranged in first and second current paths of the parallel current paths, a second switching circuit for providing a second temperature voltage which behaves in a complementary manner relative to the present temperature, a control circuit which is designed to control a voltage difference between the parallel current paths of the first switching circuit, and a current-bias circuit which is designed to control a ratio of a flow of current through the first diode element to a flow of current through the second diode element, the current-bias circuit comprising a calibration circuit which sets the ratio to a target value.

A device for providing a bandgap voltage reference. The device comprises a first switching circuit for providing a first temperature voltage which behaves proportionally to a present temperature, wherein the first switching circuit has two parallel current paths, first and second diode elements being respectively arranged in first and second current paths of the parallel current paths, a second switching circuit for providing a second temperature voltage which behaves in a complementary manner relative to the present temperature, a control circuit which is designed to control a voltage difference between the parallel current paths of the first switching circuit, and a current-bias circuit which is designed to control a ratio of a flow of current through the first diode element to a flow of current through the second diode element, the current-bias circuit comprising a calibration circuit which sets the ratio to a target value.

A reference voltage circuit is disclosed. In the reference voltage circuit, a comparator compares a reference voltage and a voltage of a capacitor, so as to output a comparison signal; a controller checks conditions of the reference voltage and the leakage current based on the comparison signal; when a voltage of the capacitor is reduced too quickly, the controller adjusts a switching frequency of a switch device to effectively maintain the voltage of the capacitor.

A bandgap reference (BGR) circuit is provided. The BGR circuit includes a first node, a second node, and a third node. A first resistive element is connected between the second node and the third node. The BGR circuit is operative to provide a reference voltage as an output. The BGR circuit further includes a current shunt path connected between the first node and the third node, the current shunt path being operable to regulate a voltage drop across the first resistive element.

A bandgap reference (BGR) circuit is provided. The BGR circuit includes a first node, a second node, and a third node. A first resistive element is connected between the second node and the third node. The BGR circuit is operative to provide a reference voltage as an output. The BGR circuit further includes a current shunt path connected between the first node and the third node, the current shunt path being operable to regulate a voltage drop across the first resistive element.