A read and write method includes: applying a read command to a memory device, the read command indicating address information; reading data to be read from a storage unit corresponding to the address information indicated by the read command; and if an error occurs in the data to be read, associating the address information indicated by the read command with a spare storage unit, and backing up the address information indicated by the read command and association information between the address information and the spare storage unit in a non-volatile storage unit based on a preset rule.

An address fault detection system includes write and read access circuits and a fault management circuit. The write access circuit receives an address and reference data for a write operation associated with a memory and parity data generated based on the reference data, and writes the reference data and the parity data to first and second memory blocks of the memory, respectively. The read access circuit receives the same address for a read operation associated with the memory and reads another reference data and another parity data from the first and second memory blocks, respectively. The fault management circuit compares the read parity data with parity data generated based on the read reference data to detect an address fault in the memory. The written and read reference data are different when the address fault is detected, and same when the address fault is not detected.

A method for detecting an address error when reading a bitstream from a memory is proposed, wherein a check is carried out as to whether the bitstream in conjunction with the present read address is a code word of an error code and wherein, should the bitstream in conjunction with the present read address not be a code word of the error code, an address error is subsequently detected provided the error code does not correct an error correctable thereby. Accordingly, an apparatus, a system and a computer program product are specified.

A memory controller generates error codes associates with write data and a write address and provides the error codes over a dedicated error detection code link to a memory device during a write operation. The memory device performs error detection, and in some cases correction, on the received write data and write address based on the error codes. If no uncorrectable errors are detected, the memory device furthermore stores the error codes in association with the write data. On a read operation, the memory device outputs the error codes over the error detection code link to the memory controller together with the read data. The memory controller performs error detection, and in some cases correction, on the received read data based on the error codes.

A solid state disk access method includes: determining, in response to a read error , a first read voltage of the current data block according to a current data storage time interval to which a data storage time of the current data block belongs; performing reread error correction on the data in the current data block based on the first read voltage; determining, if reread error correction of the current data block fails, a second read voltage corresponding to the current data block according to the current data storage time interval and a preset data read rule that is determined based on the data storage time interval and the number of data reads; and performing reread error correction on the data in the current data block based on the second read voltage until the reread error correction of the current data block meets a preset reread error correction condition

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may disable ECC functions of the memory devices. When the ECC function is disabled by the host device, the memory device may deactivate various ECC periphery components coupled with an ECC circuit of the memory device to reduce power consumption of the memory device. In some cases, the memory device may disconnect an electrical power supply to the ECC periphery components. In other cases, the memory device may selectively disable the ECC periphery components or block an access command from reaching the ECC periphery components during an access operation. Further, the ECC array may be configured to replace faulty portions of a main array of the memory device when the ECC function is disabled.

Systems, apparatuses, and methods related to memory device protection are described. A quantity of errors within a memory device can be determined and the determined quantity can be used to further determine whether to utilize single or multiple memory devices for an error correction and/or detection operation. Multiple memory devices need not be utilized for the error correction and/or detection operation unless a quantity of errors within the memory device exceeds a threshold quantity.

Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

An apparatus and method are provided for generating an error code for a block comprising a plurality of data bits and a plurality of address bits. The apparatus has block generation circuitry to generate a block comprising a plurality of data bits and a plurality of address bits, and error code generation circuitry for receiving that block and a mask array comprising a plurality of mask rows, and for then applying an error code generation algorithm to generate an error code for the block. The error code comprises a plurality of check bits, where each check bit is determined using the block and a corresponding mask row of the mask array. Each mask row comprises a plurality of mask bits, each mask bit being associated with a corresponding bit of the block. At least one mask row has its mask bit values constrained so as to ensure that when all of the data bits of the block have the same value, the error code generated by the error code generation circuitry has at least one check bit having a different value to the value of the data bits irrespective of the value of the address bits. In addition to supporting detection and/or correction of errors in the data bits, such an approach also allows memory address decode errors to be detected whilst in addition allowing detection of stuck at zero or stuck at one errors in a memory's output.

In one form, a memory controller includes a command queue, an arbiter, and a replay queue. The command queue receives and stores memory access requests. The arbiter is coupled to the command queue for providing a sequence of memory commands to a memory channel. The replay queue stores the sequence of memory commands to the memory channel, and continues to store memory access commands that have not yet received responses from the memory channel. When a response indicates a completion of a corresponding memory command without any error, the replay queue removes the corresponding memory command without taking further action. When a response indicates a completion of the corresponding memory command with an error, the replay queue replays at least the corresponding memory command. In another form, a data processing system includes the memory controller, a memory accessing agent, and a memory system to which the memory controller is coupled.