G06F11/1016

Data protection system and method thereof for 3D semiconductor device

A data protection system and a data protection method for handling an errored command are provided. The data protection system includes a master device and a slave device. The master device is configured to send command. The slave device is coupled to the master device. The save device is configured to receive the command from the master device. The master device includes a master interface. The slave device includes a slave interface. The master interface and the slave interface are electrically connected via one or plurality of bonds and/or TSVs and configured for interfacing between the master device and the slave device. The errored command represents the command having a parity or other error. The slave device is further configured to receive the errored command and to respond the errored command according to read or write operation.

Memory module, error correction method of memory controller controlling the same, and computing system including the same

A memory module includes first memory chips, each having a first input/output width, and configured to store data, a second memory chip having a second input/output width and configured to store an error correction code for correcting an error in the data, and a driver circuit configured to receive a clock signal, a command, and an address from a memory controller and to transmit the clock signal, the command, and the address to the first memory chips and the second memory chip. An address depth of each of the first memory chips and an address depth of the second memory chip are different from each other.

ERROR CORRECTION MANAGEMENT FOR A MEMORY DEVICE
20220058084 · 2022-02-24 ·

Methods, systems, and devices for error correction management are described. A system may include a memory device that supports internal detection and correction of corrupted data, and whether such detection and correction functionality is operating properly may be evaluated. A known error may be included (e.g., intentionally introduced) into either data stored at the memory device or an associated error correction codeword, among other options, and data or other indications subsequently generated by the memory device may be evaluated for correctness in view of the error. Thus, either the memory device or a host device coupled with the memory device, among other devices, may determine whether error detection and correction functionality internal to the memory device is operating properly.

Rank and page remapping logic in a volatile memory

Embodiments of the inventive concept include a plurality of memory ranks, a buffer chip including a rank remap control section configured to remap a rank from among the plurality of memory ranks of the volatile memory module responsive to a failure of the rank, and a dynamic serial presence detect section configured to dynamically update a stated total capacity of the volatile memory module based at least on the remapped rank. In some embodiments, a memory module includes a plurality of memory ranks, an extra rank in addition to the plurality of memory ranks, the extra rank being a spare rank configured to store a new page corresponding to a failed page from among the plurality of ranks, and a buffer chip including a page remap control section configured to remap the failed page from among the plurality of ranks to the new page in the extra rank.

DATA PROTECTION SYSTEM AND METHOD THEREOF FOR 3D SEMICONDUCTOR DEVICE

A data protection system and a data protection method for handling an errored command are provided. The data protection system includes a master device and a slave device. The master device is configured to send command. The slave device is coupled to the master device. The save device is configured to receive the command from the master device. The master device includes a master interface. The slave device includes a slave interface. The master interface and the slave interface are electrically connected via one or plurality of bonds and/or TSVs and configured for interfacing between the master device and the slave device. The errored command represents the command having a parity or other error. The slave device is further configured to receive the errored command and to respond the errored command according to read or write operation.

Management of test resources to perform testing of memory components under different temperature conditions

Filter information including a first temperature level and a second temperature level associated with a test process to be executed on one or more memory components is determined. Information associated with the test process is distributed to a first test component including a first set of memory components and a first temperature control component and a second test component including a second set of memory components and a second temperature control component. First feedback information associated with execution of the test process by the first test component at the first temperature level established by the first temperature control component is received. Second feedback information associated with execution of the test process by the second test component at the second temperature level established by the second temperature control component is received. Based on at least one of the first feedback information or the second feedback information, a failure of the test process executed using at least one of the first temperature level or the second temperature level is determined.

Hot-read data aggregation and code selection

An apparatus comprising a memory and a controller. The memory is configured to process a plurality of read/write operations. The memory comprises a plurality of memory modules. Each memory module has a size less than a total size of the memory. The controller is configured to (i) classify data from multiple blocks of the memory as hot-read data or non hot-read data, (ii) aggregate the hot-read data to dedicated blocks, and (iii) select a type of error correcting code to protect the hot-read data in the dedicated blocks. The aggregation reduces an impact on endurance of the memory.

Memory erasure information in cache lines

Example implementations relate to storing memory erasure information in memory devices on a memory module. In example implementations, a memory location associated with an error in a first cache line may be identified. The first cache line may include data read from the memory location, and the memory location may be in a first memory device of a plurality of memory devices on a memory module. A device number corresponding to the first memory device may be written to one of the plurality of memory devices. When the memory location is read for a second cache line, the device number corresponding to the first memory device may be retrieved. The second cache line may include the retrieved device number and data read from the memory location.

Data storage apparatus and operating method thereof
11243888 · 2022-02-08 · ·

A data storage apparatus includes storage divided into unit physical regions and having data stored therein, a buffer memory having buffer memory regions loaded with a map table comprising map data respectively indicating connection information between logical addresses of a host and start physical addresses for the unit physical regions, and a controller configured to: control data input and output to and from the storage according to a request of a host, to read, based on a map table address corresponding to a logical address included in the request, the map data for the logical address from the buffer memory, and to remap the map data by merging source map data of a buffer memory region having a number of errors equal to or greater than a threshold value with victim map data of a buffer memory region having a number of errors less than the threshold value.

Apparatus and method for recovering a data error in a memory system
11245420 · 2022-02-08 · ·

A memory system includes a memory device and a controller. The memory device includes a plurality of non-volatile memory groups individually storing a plurality of data segments, each data segment corresponding to a codeword. The controller is configured to perform hard decision decoding to correct an error when the error is included in a first data segment among the plurality of data segments, determine whether other data segments associated with the first data segment, among the plurality of data segments, are readable when the hard decision decoding fails, and perform chipkill decoding based on the first data segment and the other data segments when the other data segments are readable.