Systems and methods are disclosed for error recovery in a digital data channel. In an error recovery approach when the hardware fails to recover a sector, the sample for that sector can be saved along with a metric measure that indicates the quality of the sample. This process can begin from a first on-the-fly receiving and decoding of data. During each step of error recovery, a retry attempt may either use samples obtained during a new decoding attempt or may use a sample, or a combination of samples, having the best metric from an earlier attempt, or a combination of earlier attempts, to perform the recovery during a current retry recovery attempt.

There is described a computer-implemented method comprising: receiving an access request in relation to data, wherein there exists ECC data relating to the data, and wherein the ECC data is configured to enable correction of multiple-bit errors spanning up to a predetermined number of consecutive bits of the data; performing a first integrity verification procedure to verify the integrity of at least the data; responsive to a finding of non-integrity by the first integrity verification procedure, performing an error analysis procedure based on the data and the ECC data; responsive to generation of corrected data by the error analysis procedure, performing a second integrity verification procedure to verify the integrity of at least the corrected data; and responsive to a finding of integrity by the second integrity verification procedure, allowing the access request using the corrected data. Related methods, apparatuses, computer programs, and computer-readable media are also described.

A method and associated apparatus is disclosed for processing data by means of an error code, wherein the error code has an H-matrix with n columns and m rows, wherein the columns of the H-matrix are different, wherein component-by-component XOR sums of adjacent columns of the H-matrix are different from one another and from all columns of the H-matrix and wherein component-by-component XOR sums of nonadjacent columns of the H-matrix are different from all columns of the H-matrix and from all component-by-component XOR sums of adjacent columns of the H-matrix.

Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

A device with error correction is provided. The device includes a plurality of memory cells, and reference read write circuit, a plurality of sense amplifiers, and an error-correction code control block. The reference read write circuit is configured to generate a reference voltage in response to data stored in at least one of the plurality of memory cells. A plurality of sense amplifiers are each coupled to a respective memory cell of the plurality of memory cells. An error-correction code (ECC) control block may output an error signal when the ECC control block detects that it is unable to correct error data in one or more respective memory cells. The reference read write circuit may overwrite data in the at least one of the plurality of memory cells in response to the error signal.

Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

What is proposed is a solution for processing errors in a sequence of bits, wherein the sequence of bits, in the error-free case, forms a codeword of an error code, wherein the error code is based on an H-matrix or is able to be determined thereby, wherein an error syndrome is determined for the sequence of bits, wherein a link is determined between components of the error syndrome and parts of the H-matrix, and wherein two adjacent bits in the sequence of bits are corrected if the link adopts a predefined value.

An error correcting method of a memory system includes: reading data and an error correction code from a plurality of memory chips; correcting an error of the data based on the error correction code; determining whether or not a miscorrection occurs in the correcting of the error of the data; designating one memory chip among the plurality of the memory chips as a chip-killed memory chip when a miscorrection occurs; re-correcting the error of the data based on the error correction code in consideration of the designated chip-killed memory chip; and re-determining whether a miscorrection occurs in the re-correcting of the error of the data.

A semiconductor device includes a master circuit which outputs a first write request signal for requesting to write data, a bus which receives the data and the first write request signal, a bus control unit which is arranged on the bus, generates an error detection code for the data and generates a second write request signal which includes second address information corresponding to first address information included in the first write request signal and memory controllers which each write the data into a storage area of an address designated by the first write request signal and writes the error detection code into a storage area of an address designated by the second write request signal in the storage areas of memories.

Provided are an apparatus, memory device, and method to determine error location polynomial coefficients to provide to bit correction logic instances to decode bits of a codeword. A memory controller for a memory includes coefficient generating logic to receive as input a plurality of syndrome values to generate a plurality of coefficients for an error locator polynomial. A plurality of instances of bit correction logic, one instance for each bit of bits to correct in a codeword for a block in the memory array to decode. Each instance of bit correction logic is to receive as input the coefficients for the error locator polynomial and elements for the bit to correct from a decoder alphabet to determine whether to correct the bit and output as a decoded bit the bit or a corrected bit to include in a decoded codeword.