An erasure code-based partial write-in method and apparatus are provided. According to the method, a data node receives a first updating request carrying updating data and first version information from a client, wherein the first version information is information stored by the client and indicating a version of a target data block to be updated with the updating data, a data amount of the updating data is less than a data amount of one erasure code group which comprises m data blocks and k check data blocks, both m and k being natural numbers; the data node acquires second version information in response to the first updating request, wherein the second version information is information stored in the node and indicating the version of the target data block; the data node processes the updating data according to a matching result of the first version information and second version information.

A method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N−1 groups and the plurality of parity bits form a first group different from the N−1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N−1 groups; and providing a second word comprising updated data bits that form a second one of the N−1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N−1 groups.

A system and a method for processing storage device occurring abnormal power interruption are provided. The method includes the following steps: (a) providing data to the storage device by a master controller; (b) outputting an address storing instruction from the master controller; (c) storing an address of a storage block in an address storage; (d) executing a program for accessing the data by the storage device; (e) determining whether the storage device is abnormally powered down by the master controller, if yes, performing step (f), and if not, performing step (g) after completing the execution of the program; (f) instructing an storage control circuit of the storage device to execute an error processing procedure on the storage block corresponding to the address by the master controller, and then performing step (a); (g) clearing the address stored in the address storage according to an instruction from the master controller.

A requester issues a request specifying a target address indicating an addressed location in a memory system. A completer responds to the request. Tag error checking circuitry performs a tag error checking operation when the request issued by the requester is a tag-error-checking request specifying an address tag. The tag error checking operation comprises determining whether the address tag matches an allocation tag stored in the memory system associated with a block of one or more addresses comprising the target address specified by the tag-error-checking request. The requester and the completer communicate via a memory interface having at least one data signal path to exchange read data or write data between the requester and the completer; and at least one tag signal path, provided in parallel with the at least one data signal path, to exchange address tags or allocation tags between the requester and the completer.

A memory system includes: a memory device, including a plurality of memory cells, suitable for reading and writing data with a parity bit on a basis of a page; and a memory controller suitable for obtaining an error mask pattern based on compressed data when a number of error bits detected based on the data and the parity bit is equal to or less than a first threshold value and greater than a second threshold value, and controlling to write the compressed data, the parity bit updated based on the compressed data in which the error mask pattern is reflected, compression information on the compressed data and pattern information on the error mask pattern to the page.

A method includes: retrieving a first word comprising a plurality of data bits and a plurality of parity bits that correspond to the first word, wherein the plurality of data bits form N−1 groups and the plurality of parity bits form a first group different from the N−1 groups, and N is a positive integer greater than 2; receiving a request to update respective data bits of a first one of the N−1 groups; and providing a second word comprising updated data bits that form a second one of the N−1 groups and a plurality of updated parity bits that correspond to the second word, wherein the plurality of updated parity bits form a second group that has a same group index as the first one of the N−1 groups.

A memory device and a multiple cells error correction in a memory cell is provided. The memory device includes a plurality of memory cells and a memory control circuit. Each of the memory cells includes a first type physical cell and a second type physical cell. The memory control circuit is coupled to each of the memory cells. The memory control circuit writes a writing data into the first type physical cell and verifies the data stored in the first type physical cell is same as the writing data or not. The writing data is set and processed by performing a write operation. The memory control circuit writes the writing data into the second type physical cell when the data stored in the first type physical cell is not same as the writing data.

Disclosed are techniques for managing parity information for data stored on a storage device. A method can be implemented at a computing device communicably coupled to the storage device, and include (1) receiving a request to write data into a data band of the storage device, (2) writing the data into stripes of the data band, comprising, for each stripe of the data band: (i) calculating first parity information for the data written into the stripe, (ii) writing the first parity information into a volatile memory, and (iii) in response to determining that a threshold number of stripes have been written: converting the first parity information into smaller second parity information, and (3) in response to determining that the data band is read-verified: (i) converting the second parity information into smaller third parity information, and (ii) storing the smaller third parity information into a parity band of the storage device.

An integrated circuit includes intellectual property (IP) processing circuitries each including a separate, respective at least one scan chain, and temperature management controller circuitry configured to transmit an input pattern including a plurality of bits to at least one scan chain of a first IP processing circuitry among the IP processing circuitries, detect a temperature of the first IP processing circuitries based on an output pattern received from the at least one scan chain in response to the input pattern being transmitted to the at least one scan chain of the first IP processing circuitry, and control at least one of an operation frequency or an operation voltage of the first IP processing circuitry based on the detected temperature of the first IP processing circuitry.

Methods, systems, and devices for erroneous bit discovery in a memory system are described. A controller or memory controller, for example, may read a code word from a memory medium. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) of the memory medium. Each MSR may include a portion of memory cells of the memory medium and be associated with a counter to count a quantity of erroneous bits in each MSR. When the controller identifies a quantity of erroneous bits in the code word using an error control operation, the controller may update values of counters associated with respective MSRs that correspond to the quantity of erroneous bits to count erroneous bit counts for each MSR. In some cases, the controller may perform operations described herein as part of a background operation.