A memory device includes a non-destructive memory array that includes memory cells arranged in rows and columns. The array includes a plurality of word lines, first bit lines and second bit lines, a NOR gate per column Each word line activates memory cells in a row and thereby establishes an activated row. First bit lines and second bit lines connect memory cells in columns, each first bit line provides the result of a Boolean AND operation between data stored in the first activated row and data stored in the second activated row. Each second bit line provides the result of a Boolean NOR operation between data stored in the first activated row and data stored in the second activated row. Each per-column NOR gate is connected to the first and second bit lines of each column and compares data stored in the first activated row with data stored in the second activated row.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a memory device may select an option for a host device to access a memory array including a first portion configured to store user data and a second portion configured to store different data based on whether an ECC function of the memory device is enabled or disablede.g., storing ECC data when the ECC function is enabled, storing additional user data, metadata, or both when the ECC function is disabled. The host device may disable the ECC function and transmit an input to the memory device as to how to access the memory array. The memory device, based on the input, may select the option for the host device to access the memory array and communicate with the host device in accordance with the selected option.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a memory device may select an option for a host device to access a memory array including a first portion configured to store user data and a second portion configured to store different data based on whether an ECC function of the memory device is enabled or disablede.g., storing ECC data when the ECC function is enabled, storing additional user data, metadata, or both when the ECC function is disabled. The host device may disable the ECC function and transmit an input to the memory device as to how to access the memory array. The memory device, based on the input, may select the option for the host device to access the memory array and communicate with the host device in accordance with the selected option.

A requester issues a request specifying a target address indicating an addressed location in a memory system. A completer responds to the request. Tag error checking circuitry performs a tag error checking operation when the request issued by the requester is a tag-error-checking request specifying an address tag. The tag error checking operation comprises determining whether the address tag matches an allocation tag stored in the memory system associated with a block of one or more addresses comprising the target address specified by the tag-error-checking request. The requester and the completer communicate via a memory interface having at least one data signal path to exchange read data or write data between the requester and the completer; and at least one tag signal path, provided in parallel with the at least one data signal path, to exchange address tags or allocation tags between the requester and the completer.

Methods, systems, and devices for erroneous bit discovery in a memory system are described. A controller or memory controller, for example, may read a code word from a memory medium. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) of the memory medium. Each MSR may include a portion of memory cells of the memory medium and be associated with a counter to count a quantity of erroneous bits in each MSR. When the controller identifies a quantity of erroneous bits in the code word using an error control operation, the controller may update values of counters associated with respective MSRs that correspond to the quantity of erroneous bits to count erroneous bit counts for each MSR. In some cases, the controller may perform operations described herein as part of a background operation.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a memory device may select an option for a host device to access a memory array including a first portion configured to store user data and a second portion configured to store different data based on whether an ECC function of the memory device is enabled or disablede.g., storing ECC data when the ECC function is enabled, storing additional user data, metadata, or both when the ECC function is disabled. The host device may disable the ECC function and transmit an input to the memory device as to how to access the memory array. The memory device, based on the input, may select the option for the host device to access the memory array and communicate with the host device in accordance with the selected option.

A data storage device includes a flash memory and a controller. The flash memory includes a plurality of dies, and each of the dies includes a first memory plane and a second memory plane, wherein each of the first memory plane and the second memory plane includes a plurality of physical pages. The controller retrieves data of a first physical page of the first memory plane and data of a second physical page of the second memory plane in response to a read command which is arranged to read a target page.

A RAID controller may update a RAID array by receiving updated data for a first data strip in a set of data strips in the RAID array. The RAID controller may then determine that the first data strip is stored on a device that is experiencing a slow condition. The RAID controller may then force, based on the determining, a promoted stripe write.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a memory device may select an option for a host device to access a memory array including a first portion configured to store user data and a second portion configured to store different data based on whether an ECC function of the memory device is enabled or disablede.g., storing ECC data when the ECC function is enabled, storing additional user data, metadata, or both when the ECC function is disabled. The host device may disable the ECC function and transmit an input to the memory device as to how to access the memory array. The memory device, based on the input, may select the option for the host device to access the memory array and communicate with the host device in accordance with the selected option.

A memory device includes a non-destructive memory array that includes memory cells arranged in rows and columns. The array includes a plurality of word lines, first bit lines and second bit lines, a NOR gate per column Each word line activates memory cells in a row and thereby establishes an activated row. First bit lines and second bit lines connect memory cells in columns, each first bit line provides the result of a Boolean AND operation between data stored in the first activated row and data stored in the second activated row. Each second bit line provides the result of a Boolean NOR operation between data stored in the first activated row and data stored in the second activated row. Each per-columnNOR gate is connected to the first and second bit lines of each column and compares data stored in the first activated row with data stored in the second activated row.